JP6378168B2 - 半導体ウェハーを洗浄する円錐型スポンジブラシ - Google Patents
半導体ウェハーを洗浄する円錐型スポンジブラシ Download PDFInfo
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- JP6378168B2 JP6378168B2 JP2015504679A JP2015504679A JP6378168B2 JP 6378168 B2 JP6378168 B2 JP 6378168B2 JP 2015504679 A JP2015504679 A JP 2015504679A JP 2015504679 A JP2015504679 A JP 2015504679A JP 6378168 B2 JP6378168 B2 JP 6378168B2
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- 238000004140 cleaning Methods 0.000 title claims description 67
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 235000012431 wafers Nutrition 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 135
- 238000000034 method Methods 0.000 claims description 28
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 8
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 8
- 230000003247 decreasing effect Effects 0.000 claims 1
- 230000007246 mechanism Effects 0.000 description 10
- 239000012530 fluid Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 238000005498 polishing Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- A—HUMAN NECESSITIES
- A46—BRUSHWARE
- A46B—BRUSHES
- A46B9/00—Arrangements of the bristles in the brush body
- A46B9/08—Supports or guides for bristles
-
- A—HUMAN NECESSITIES
- A46—BRUSHWARE
- A46B—BRUSHES
- A46B7/00—Bristle carriers arranged in the brush body
- A46B7/04—Bristle carriers arranged in the brush body interchangeably removable bristle carriers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
- B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
- B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
- B08B1/34—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members rotating about an axis parallel to the surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- A—HUMAN NECESSITIES
- A46—BRUSHWARE
- A46B—BRUSHES
- A46B13/00—Brushes with driven brush bodies or carriers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
- Brushes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
本願は、2012年4月3日に出願された同時係属中の米国仮特許出願第61/619512号の利益を主張する。この米国特許仮出願の内容全体は、引用することにより、本明細書の一部をなす。
102 回転機構
104 半導体基板
106 表面
108 外縁
109 中心
110 円錐型ブラシ
112 中空ボア
113 内面
114 外面
116 第2の係合部
118 突起部
120 溝部
124 第1の端
126 第2の端
130 ブラシコア
132 本体部
133 外面
140 第1の係合部
150 流体チャネル
156 孔
160 回転係合部
174 溝部
190 第1の係合表面
192 第2の係合表面
Claims (9)
- 基板を洗浄する方法において、
第1の軸を中心として配置されたブラシコアと、ブラシとを含む洗浄装置であって、前記ブラシが、外面と、前記ブラシコアを中心に形成された中空ボアとを有し、かつ、第2の端とは反対側の第1の端を更に有し、前記第1の軸に対して略垂直に捉えたとき、前記ブラシの断面積が、前記第1の端から前記第2の端にかけて増大するようにし、前記ブラシの外表面に複数の突起部を形成した洗浄装置に基板を係合させることと、
前記ブラシを前記第1の軸を中心として第1の回転方向に回転させることと、
前記基板を第2の軸を中心として第2の回転方向に回転させることとを含み、
前記第2の軸は前記第1の軸に交差し、前記ブラシの前記第1の端から該ブラシの前記第2の端にかけて前記外面に沿って一直線上の複数の点の各々が、それぞれの第1の線速度で動き、該第1の線速度は、前記第1の回転方向に対して正接しており、前記ブラシの前記第1の端から該ブラシの前記第2の端にかけて概して増大し、
前記基板の外縁から該基板の中心にかけて径方向に該基板に沿う複数の点の各々が、それぞれの第2の線速度で動き、該第2の線速度が、前記第2の回転方向に対して正接しており、前記基板の前記外縁から該基板の前記中心にかけて概して減少し、
前記ブラシの外面に沿った第1の点の前記第1の線速度と、径方向に前記基板に沿って前記第1の点の近傍の第2の点の前記第2の線速度との差は、約±10%以内で略一定であるようにした方法。 - 前記基板は円形の半導体ウエハである請求項1に記載の方法。
- 前記基板は円形の基板である請求項1に記載の方法。
- 前記ブラシはポリビニルアルコールブラシである請求項1に記載の方法。
- 基板を洗浄する方法において、
洗浄装置を第1の軸を中心として回転させることであって、前記洗浄装置は、第1の端と、該第1の端とは反対側の第2の端と、前記第1の軸を中心として配置されているブラシコアと、該ブラシコアの周囲に成形されているブラシとを備え、前記第1の軸に対して略垂直に捉えたとき、前記ブラシの断面積は、前記第1の端から前記第2の端にかけて概して増大するようにし、前記ブラシの外表面に複数の突起部を形成した洗浄装置を第1の軸を中心として回転させることと、
基板を第2の軸を中心として回転させることと、
前記洗浄装置の第1の表面を前記基板の第2の表面に係合させることを含んで成り、
前記第1の表面上の第1の点の第1の線速度と、前記第2の表面上の、前記第1の点の近傍の第2の点の第2の線速度との差が約±10%以内で略一定であるようにした方法。 - 前記基板は円形の半導体ウェハーである請求項5に記載の方法。
- 前記基板は円形の基板である請求項5に記載の方法。
- 前記第1の線速度と前記第2の線速度との前記差は、約±5%以内で略一定である請求項5に記載の方法。
- 前記ブラシはポリビニルアルコールブラシである請求項5に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261619512P | 2012-04-03 | 2012-04-03 | |
US61/619,512 | 2012-04-03 | ||
US13/803,211 | 2013-03-14 | ||
US13/803,211 US8778087B2 (en) | 2012-04-03 | 2013-03-14 | Conical sponge brush for cleaning semiconductor wafers |
PCT/US2013/034964 WO2013152008A1 (en) | 2012-04-03 | 2013-04-02 | Conical sponge brush for cleaning semiconductor wafers |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015517215A JP2015517215A (ja) | 2015-06-18 |
JP2015517215A5 JP2015517215A5 (ja) | 2016-06-02 |
JP6378168B2 true JP6378168B2 (ja) | 2018-08-22 |
Family
ID=49233228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015504679A Active JP6378168B2 (ja) | 2012-04-03 | 2013-04-02 | 半導体ウェハーを洗浄する円錐型スポンジブラシ |
Country Status (5)
Country | Link |
---|---|
US (2) | US8778087B2 (ja) |
JP (1) | JP6378168B2 (ja) |
KR (1) | KR102054536B1 (ja) |
TW (1) | TWI572419B (ja) |
WO (1) | WO2013152008A1 (ja) |
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USD735430S1 (en) * | 2013-09-24 | 2015-07-28 | Ebara Corporation | Roller shaft for substrate cleaning |
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CN103639130B (zh) * | 2013-12-25 | 2015-11-25 | 河北宇牛电气设备有限公司 | 佛尘式绝缘子宽阈定位快速清洁装置 |
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CN105268671B (zh) * | 2015-10-30 | 2017-08-29 | 国网山东省电力公司东营供电公司 | 附着式绝缘子本体清洁装置 |
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-
2013
- 2013-03-14 US US13/803,211 patent/US8778087B2/en active Active
- 2013-03-28 TW TW102111168A patent/TWI572419B/zh active
- 2013-04-02 WO PCT/US2013/034964 patent/WO2013152008A1/en active Application Filing
- 2013-04-02 JP JP2015504679A patent/JP6378168B2/ja active Active
- 2013-04-02 KR KR1020147030690A patent/KR102054536B1/ko active IP Right Grant
-
2014
- 2014-06-05 US US14/297,341 patent/US9237797B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201345620A (zh) | 2013-11-16 |
WO2013152008A1 (en) | 2013-10-10 |
US20130255720A1 (en) | 2013-10-03 |
US20140283320A1 (en) | 2014-09-25 |
JP2015517215A (ja) | 2015-06-18 |
US9237797B2 (en) | 2016-01-19 |
US8778087B2 (en) | 2014-07-15 |
TWI572419B (zh) | 2017-03-01 |
KR20140143431A (ko) | 2014-12-16 |
KR102054536B1 (ko) | 2019-12-10 |
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