JP6363335B2 - 光電素子及び光電素子の製造方法 - Google Patents
光電素子及び光電素子の製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 259
- 239000000758 substrate Substances 0.000 claims description 130
- 239000000463 material Substances 0.000 claims description 44
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 28
- 239000002019 doping agent Substances 0.000 claims description 26
- 238000009792 diffusion process Methods 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000005468 ion implantation Methods 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 15
- -1 oxygen ions Chemical class 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000000969 carrier Substances 0.000 description 17
- 230000007547 defect Effects 0.000 description 11
- 238000005215 recombination Methods 0.000 description 10
- 230000006798 recombination Effects 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 239000002585 base Substances 0.000 description 5
- 238000010248 power generation Methods 0.000 description 5
- 230000002265 prevention Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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Description
110、210 ドーピング部
111、211 第1半導体層
112、212 第2半導体層
120 電極
121、221 第1電極
122、222 第2電極
130、230 トレンチ
131、231 第2絶縁膜
150、250 第1絶縁膜
180、280 パッシベーション膜
190 テクスチャ構造
261 第1ドーピング物質層
262 第1拡散防止膜
263 第2ドーピング物質層
264 第2拡散防止膜
A1 第1領域
A2 第2領域
T トレンチ領域
M1、M2、M3 マスク
S1 半導体基板の第1面
S2 半導体基板の第2面
VH ビアホール
Claims (13)
- 単結晶シリコンからなり、相互に対向する第1面及び第2面を有する半導体基板と、
前記半導体基板の第1面側に形成されたドーピング部と、
前記ドーピング部と半導体基板の第2面との間に形成された第1絶縁膜と、
を含み、
前記ドーピング部は、
単結晶シリコンにドーピングされている第1ドーパントを含む第1半導体層と、
単結晶シリコンにドーピングされている第2ドーパントを含む第2半導体層と、
を含み、
前記第1半導体層及び前記第2半導体層は、トレンチによって相互に分離され、
前記トレンチは、半導体基板の前記第1面、前記ドーピング部及び前記第1絶縁膜を順次に貫通するように形成され、
前記第1半導体層と第1電極との間から、前記トレンチを介して、前記第2半導体層と第2電極との間に延びる第2絶縁膜をさらに含み、
前記トレンチ上に延びる第2絶縁膜は、シリコン酸化膜である、
ことを特徴とする、光電素子。 - 前記第1半導体層は、第1導電型であり、
前記第2半導体層は、前記第1導電型と逆の導電型となる第2導電型であることを特徴とする、請求項1に記載の光電素子。 - 前記第1絶縁膜は、シリコン酸化物を含むことを特徴とする、請求項1または2に記載の光電素子。
- 前記第1半導体層及び前記第2半導体層に電気的に結合された第1電極及び第2電極をさらに含むことを特徴とする、請求項1〜3のいずれか1項に記載の光電素子。
- 前記第1半導体層及び前記第2半導体層は、交互に配されることを特徴とする、請求項1〜4のいずれか1項に記載の光電素子。
- 単結晶シリコンからなり、相互に対向する第1面及び第2面を有する半導体基板が形成される工程と、
イオン注入により半導体基板の前記第1面と前記第2面との間に第1絶縁膜が形成される工程と、
前記半導体基板の前記第1面と前記第1絶縁膜との間に、単結晶シリコンにドーピングされた第1ドーパントを含む第1半導体層と、単結晶シリコンにドーピングされた第2ドーパントを含む第2半導体層とを含むドーピング部が形成される工程と、
前記第1半導体層及び前記第2半導体層がエッチングされ、前記第1半導体層及び前記第2半導体層を隔離させるトレンチが形成される工程と、
前記トレンチが形成される工程は、前記第1絶縁膜がエッチングされる工程と、
前記トレンチの面と前記第1半導体層と前記第2半導体層とをカバーする第2絶縁膜が熱酸化または蒸着により形成される工程と、
を含む光電素子の製造方法。 - 前記第1絶縁膜は、酸素イオンが注入されるイオン注入により形成されるシリコン酸化膜で形成されることを特徴とする、請求項6に記載の光電素子の製造方法。
- 前記ドーピング部を形成する工程は、
化学気相蒸着により、半導体基板上に第1ドーピング物質層が形成される工程と、
前記第1ドーピング物質層上に第1拡散防止膜が形成される工程と、
を含むことを特徴とする、請求項6または7に記載の光電素子の製造方法。 - 前記第1ドーピング物質層と第1拡散防止膜とが除去されるエッチング工程をさらに含むことを特徴とする、請求項8に記載の光電素子の製造方法。
- 前記半導体基板上に第2ドーピング物質層が形成される工程と、
前記第2ドーピング物質層上に第2拡散防止膜が形成される工程と、
をさらに含むことを特徴とする、請求項8または9に記載の光電素子の製造方法。 - 前記第1ドーピング物質層と前記第2ドーピング物質層とが拡散することにより、前記第1半導体層と前記第2半導体層とがそれぞれ形成される工程をさらに含むことを特徴とする、請求項10に記載の光電素子の製造方法。
- 前記第1半導体層または前記第2半導体層と接触する第2絶縁膜の一部が除去される工程をさらに含むことを特徴とする、請求項6〜11のいずれか一項に記載の光電素子の製造方法。
- 前記第1半導体層上及び前記第2半導体層上に第1電極及び第2電極が形成される工程をさらに含むことを特徴とする、請求項6〜12のいずれか1項に記載の光電素子の製造方法。
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US13/949,147 US20140130854A1 (en) | 2012-11-12 | 2013-07-23 | Photoelectric device and the manufacturing method thereof |
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JP3762144B2 (ja) * | 1998-06-18 | 2006-04-05 | キヤノン株式会社 | Soi基板の作製方法 |
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JP2012186229A (ja) * | 2011-03-03 | 2012-09-27 | Univ Of Tokyo | 単結晶シリコン薄膜の製造方法、単結晶シリコン薄膜デバイスの製造方法及び太陽電池デバイスの製造方法並びに単結晶シリコン薄膜及びそれを用いた単結晶シリコン薄膜デバイス及び太陽電池デバイス |
-
2013
- 2013-07-23 US US13/949,147 patent/US20140130854A1/en not_active Abandoned
- 2013-09-10 EP EP13183814.6A patent/EP2731146B1/en active Active
- 2013-09-13 KR KR1020130110611A patent/KR102148427B1/ko active IP Right Grant
- 2013-09-25 JP JP2013197748A patent/JP6363335B2/ja active Active
- 2013-11-08 IN IN3516MU2013 patent/IN2013MU03516A/en unknown
- 2013-11-12 CN CN201310560386.7A patent/CN103811572B/zh active Active
Also Published As
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US20140130854A1 (en) | 2014-05-15 |
KR20140061953A (ko) | 2014-05-22 |
EP2731146B1 (en) | 2018-04-11 |
JP2014096574A (ja) | 2014-05-22 |
CN103811572B (zh) | 2017-12-12 |
KR102148427B1 (ko) | 2020-08-26 |
IN2013MU03516A (ja) | 2015-07-31 |
CN103811572A (zh) | 2014-05-21 |
EP2731146A3 (en) | 2014-09-03 |
EP2731146A2 (en) | 2014-05-14 |
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