JP6356592B2 - ショットキーバリアダイオードとその製造方法 - Google Patents

ショットキーバリアダイオードとその製造方法 Download PDF

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Publication number
JP6356592B2
JP6356592B2 JP2014255287A JP2014255287A JP6356592B2 JP 6356592 B2 JP6356592 B2 JP 6356592B2 JP 2014255287 A JP2014255287 A JP 2014255287A JP 2014255287 A JP2014255287 A JP 2014255287A JP 6356592 B2 JP6356592 B2 JP 6356592B2
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JP2014255287A
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English (en)
Japanese (ja)
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JP2016115882A (ja
JP2016115882A5 (enExample
Inventor
永岡　達司
達司 永岡
裕樹 三宅
裕樹 三宅
真一朗 宮原
真一朗 宮原
佐智子 青井
佐智子 青井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Toyota Motor Corp
Toyota Central R&D Labs Inc
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Denso Corp
Toyota Motor Corp
Toyota Central R&D Labs Inc
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Application filed by Denso Corp, Toyota Motor Corp, Toyota Central R&D Labs Inc filed Critical Denso Corp
Priority to JP2014255287A priority Critical patent/JP6356592B2/ja
Priority to PCT/JP2015/079479 priority patent/WO2016098438A1/ja
Priority to US15/519,701 priority patent/US9972674B2/en
Priority to CN201580068085.XA priority patent/CN107004725B/zh
Publication of JP2016115882A publication Critical patent/JP2016115882A/ja
Publication of JP2016115882A5 publication Critical patent/JP2016115882A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2014255287A 2014-12-17 2014-12-17 ショットキーバリアダイオードとその製造方法 Expired - Fee Related JP6356592B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014255287A JP6356592B2 (ja) 2014-12-17 2014-12-17 ショットキーバリアダイオードとその製造方法
PCT/JP2015/079479 WO2016098438A1 (ja) 2014-12-17 2015-10-19 ショットキーバリアダイオードとその製造方法
US15/519,701 US9972674B2 (en) 2014-12-17 2015-10-19 Schottky barrier diode and manufacturing method thereof
CN201580068085.XA CN107004725B (zh) 2014-12-17 2015-10-19 肖特基势垒二极管及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014255287A JP6356592B2 (ja) 2014-12-17 2014-12-17 ショットキーバリアダイオードとその製造方法

Publications (3)

Publication Number Publication Date
JP2016115882A JP2016115882A (ja) 2016-06-23
JP2016115882A5 JP2016115882A5 (enExample) 2017-02-23
JP6356592B2 true JP6356592B2 (ja) 2018-07-11

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JP2014255287A Expired - Fee Related JP6356592B2 (ja) 2014-12-17 2014-12-17 ショットキーバリアダイオードとその製造方法

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Country Link
US (1) US9972674B2 (enExample)
JP (1) JP6356592B2 (enExample)
CN (1) CN107004725B (enExample)
WO (1) WO2016098438A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6745458B2 (ja) * 2015-04-15 2020-08-26 パナソニックＩｐマネジメント株式会社 半導体素子
DE112015006098T5 (de) * 2015-05-15 2017-11-30 Hitachi, Ltd. Leistungshalbleiterelement und Leistungshalbleitermodul, welches dieses verwendet
EP3712962B1 (en) * 2019-03-22 2023-06-07 STMicroelectronics S.r.l. Semiconductor mps diode with reduced current-crowding effect and manufacturing method thereof
JP7687171B2 (ja) * 2021-09-28 2025-06-03 株式会社デンソー 半導体装置およびその製造方法
JP2023140037A (ja) * 2022-03-22 2023-10-04 株式会社東芝 半導体装置
FR3152640A1 (fr) * 2023-08-28 2025-03-07 Stmicroelectronics International N.V. Composant vertical de puissance

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094433A (ja) 2007-10-12 2009-04-30 National Institute Of Advanced Industrial & Technology 炭化珪素装置
JP2009164237A (ja) * 2007-12-28 2009-07-23 Panasonic Corp ショットキーバリアダイオード
JP5370985B2 (ja) * 2008-09-22 2013-12-18 日本インター株式会社 Ｊｂｓの製造方法
CN102315281B (zh) * 2010-09-07 2013-09-18 成都芯源系统有限公司 肖特基二极管及其制作方法
US8803277B2 (en) * 2011-02-10 2014-08-12 Cree, Inc. Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
JP5999748B2 (ja) * 2011-08-12 2016-09-28 ルネサスエレクトロニクス株式会社 パワーｍｏｓｆｅｔ、ｉｇｂｔおよびパワーダイオード
JP5685237B2 (ja) 2012-11-09 2015-03-18 住友ゴム工業株式会社 空気入りタイヤ
JP6112600B2 (ja) 2012-12-10 2017-04-12 ローム株式会社 半導体装置および半導体装置の製造方法
CN104969360B (zh) * 2013-03-25 2018-04-20 富士电机株式会社 半导体装置
US9324645B2 (en) * 2013-05-23 2016-04-26 Avogy, Inc. Method and system for co-packaging vertical gallium nitride power devices
CN103346083B (zh) * 2013-07-09 2016-10-05 苏州捷芯威半导体有限公司 氮化镓肖特基二极管及其制造方法
CN103545382A (zh) * 2013-11-12 2014-01-29 株洲南车时代电气股份有限公司 一种结势垒肖特基二极管及其制作方法

Also Published As

Publication number Publication date
US20170278923A1 (en) 2017-09-28
JP2016115882A (ja) 2016-06-23
WO2016098438A1 (ja) 2016-06-23
CN107004725B (zh) 2019-07-05
US9972674B2 (en) 2018-05-15
CN107004725A (zh) 2017-08-01

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