JP6354508B2 - 垂直磁気記録媒体 - Google Patents
垂直磁気記録媒体 Download PDFInfo
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- JP6354508B2 JP6354508B2 JP2014203283A JP2014203283A JP6354508B2 JP 6354508 B2 JP6354508 B2 JP 6354508B2 JP 2014203283 A JP2014203283 A JP 2014203283A JP 2014203283 A JP2014203283 A JP 2014203283A JP 6354508 B2 JP6354508 B2 JP 6354508B2
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- JP
- Japan
- Prior art keywords
- magnetic recording
- magnetic
- layer
- recording medium
- recording layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000005291 magnetic effect Effects 0.000 title claims description 189
- 239000013078 crystal Substances 0.000 claims description 46
- 239000000956 alloy Substances 0.000 claims description 43
- 229910045601 alloy Inorganic materials 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 145
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 30
- 239000000463 material Substances 0.000 description 26
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 23
- 229910005335 FePt Inorganic materials 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 15
- 238000004544 sputter deposition Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 239000000696 magnetic material Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910052742 iron Inorganic materials 0.000 description 7
- 230000005415 magnetization Effects 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 239000003575 carbonaceous material Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000007429 general method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000010687 lubricating oil Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 229910003321 CoFe Inorganic materials 0.000 description 2
- -1 CoNiP Inorganic materials 0.000 description 2
- RZJQYRCNDBMIAG-UHFFFAOYSA-N [Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Zn].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn] Chemical class [Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Zn].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn] RZJQYRCNDBMIAG-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910001004 magnetic alloy Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 229910000702 sendust Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000012916 structural analysis Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 229910000521 B alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910019222 CoCrPt Inorganic materials 0.000 description 1
- 229910019233 CoFeNi Inorganic materials 0.000 description 1
- 229910018936 CoPd Inorganic materials 0.000 description 1
- 229910018979 CoPt Inorganic materials 0.000 description 1
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 1
- 229910015187 FePd Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010952 cobalt-chrome Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005350 ferromagnetic resonance Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000006249 magnetic particle Substances 0.000 description 1
- 238000007885 magnetic separation Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013080 microcrystalline material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000010702 perfluoropolyether Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/653—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Fe or Ni
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7379—Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
Landscapes
- Magnetic Record Carriers (AREA)
Description
平滑な表面を有する(001)MgO単結晶基板(タテホ化学工業株式会社製)を洗浄し、非磁性基板10を準備した。洗浄後の非磁性基板10を、スパッタ装置内に導入した。非磁性基板10を350℃に加熱した後に、圧力0.4PaのArガス中でPtターゲットを用いたRFマグネトロンスパッタ法により、膜厚20nmのPtシード層20を形成した。
FePtターゲットとして、Fe/Pt比が50/50(比較例1)及び54/46(比較例2)のターゲットを用いた以外、上記実施例1と同様にして、磁気記録媒体を調製した。作製した磁気記録媒体の組成を表2および表3に示した。
XRDにより、得られた磁気記録媒体の磁気記録層30がL10型規則構造を有することを確認した。また、XRDにより、L10型規則構造の結晶格子のa軸およびc軸の長さ測定した。また、XRDから規則度Sを求めた。
(式中、Aは磁性粒子間の磁気的な分離性能を表す係数である。)
20 シード層
30 磁気記録層
Claims (3)
- 非磁性基板と、磁気記録層を少なくとも含む磁気記録媒体であって、前記磁気記録層はL10型規則構造を有する規則合金を含み、Fe、PtおよびVを含み、Pt>Feの組成を有し、Vの含有量が3〜12at%であることを特徴とする磁気記録媒体。
- 前記磁気記録層は、前記規則合金を含む磁性結晶粒と、非磁性結晶粒界とからなるグラニュラー構造を有し、前記非磁性結晶粒界はVを含むことを特徴とする請求項1に記載の磁気記録媒体。
- 前記磁気記録媒体は、シード層をさらに含み、前記シード層がPtを含むことを特徴とする請求項1または2に記載の磁気記録媒体。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014203283A JP6354508B2 (ja) | 2014-10-01 | 2014-10-01 | 垂直磁気記録媒体 |
PCT/JP2015/004396 WO2016051661A1 (ja) | 2014-10-01 | 2015-08-31 | 垂直磁気記録媒体 |
MYPI2017700654A MY178146A (en) | 2014-10-01 | 2015-08-31 | Perpendicular magnetic recording medium |
US15/445,231 US10388315B2 (en) | 2014-10-01 | 2017-02-28 | Perpendicular magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014203283A JP6354508B2 (ja) | 2014-10-01 | 2014-10-01 | 垂直磁気記録媒体 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016071920A JP2016071920A (ja) | 2016-05-09 |
JP2016071920A5 JP2016071920A5 (ja) | 2017-04-13 |
JP6354508B2 true JP6354508B2 (ja) | 2018-07-11 |
Family
ID=55629741
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014203283A Active JP6354508B2 (ja) | 2014-10-01 | 2014-10-01 | 垂直磁気記録媒体 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10388315B2 (ja) |
JP (1) | JP6354508B2 (ja) |
MY (1) | MY178146A (ja) |
WO (1) | WO2016051661A1 (ja) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4175829B2 (ja) * | 2002-04-22 | 2008-11-05 | 株式会社東芝 | 記録媒体用スパッタリングターゲットと磁気記録媒体 |
US20080057350A1 (en) | 2006-09-01 | 2008-03-06 | Heraeus, Inc. | Magnetic media and sputter targets with compositions of high anisotropy alloys and oxide compounds |
JP5145437B2 (ja) * | 2011-03-02 | 2013-02-20 | 株式会社日立製作所 | 磁気記録媒体 |
MY168523A (en) * | 2012-10-25 | 2018-11-12 | Jx Nippon Mining & Metals Corp | Fe-pt-based sputtering target having non-magnetic substance dispersed therein |
-
2014
- 2014-10-01 JP JP2014203283A patent/JP6354508B2/ja active Active
-
2015
- 2015-08-31 WO PCT/JP2015/004396 patent/WO2016051661A1/ja active Application Filing
- 2015-08-31 MY MYPI2017700654A patent/MY178146A/en unknown
-
2017
- 2017-02-28 US US15/445,231 patent/US10388315B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
MY178146A (en) | 2020-10-05 |
US20170178674A1 (en) | 2017-06-22 |
JP2016071920A (ja) | 2016-05-09 |
US10388315B2 (en) | 2019-08-20 |
WO2016051661A1 (ja) | 2016-04-07 |
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