JP6156518B2 - 垂直磁気記録媒体 - Google Patents
垂直磁気記録媒体 Download PDFInfo
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- JP6156518B2 JP6156518B2 JP2015558779A JP2015558779A JP6156518B2 JP 6156518 B2 JP6156518 B2 JP 6156518B2 JP 2015558779 A JP2015558779 A JP 2015558779A JP 2015558779 A JP2015558779 A JP 2015558779A JP 6156518 B2 JP6156518 B2 JP 6156518B2
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- 230000005291 magnetic effect Effects 0.000 title claims description 399
- 239000013078 crystal Substances 0.000 claims description 66
- 239000000956 alloy Substances 0.000 claims description 59
- 229910045601 alloy Inorganic materials 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 35
- 229910052742 iron Inorganic materials 0.000 claims description 19
- 229910052697 platinum Inorganic materials 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 229910052804 chromium Inorganic materials 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 327
- 238000000034 method Methods 0.000 description 25
- 239000000463 material Substances 0.000 description 24
- 229910005335 FePt Inorganic materials 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 18
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 17
- 238000009826 distribution Methods 0.000 description 16
- 230000005415 magnetization Effects 0.000 description 16
- 230000008878 coupling Effects 0.000 description 14
- 238000010168 coupling process Methods 0.000 description 14
- 238000005859 coupling reaction Methods 0.000 description 14
- 239000000696 magnetic material Substances 0.000 description 14
- 239000011241 protective layer Substances 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 11
- 230000006870 function Effects 0.000 description 9
- 238000001755 magnetron sputter deposition Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000005191 phase separation Methods 0.000 description 5
- -1 CoNiP Inorganic materials 0.000 description 4
- 229910015187 FePd Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000003575 carbonaceous material Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 229910019222 CoCrPt Inorganic materials 0.000 description 3
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 3
- 229910002367 SrTiO Inorganic materials 0.000 description 3
- 239000010952 cobalt-chrome Substances 0.000 description 3
- 239000010687 lubricating oil Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910003321 CoFe Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005350 ferromagnetic resonance Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 229910000702 sendust Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 229910000521 B alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910019233 CoFeNi Inorganic materials 0.000 description 1
- 229910018936 CoPd Inorganic materials 0.000 description 1
- 229910018979 CoPt Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical class [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013080 microcrystalline material Substances 0.000 description 1
- 239000010702 perfluoropolyether Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/653—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Fe or Ni
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7379—Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
Landscapes
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Description
平滑な表面を有し、(100)の結晶面方位を有するMgO単結晶基板(タテホ化学工業株式会社製)を洗浄し、非磁性基板10を準備した。洗浄後の非磁性基板10を、スパッタ装置内に導入した。非磁性基板10を350℃に加熱し、圧力0.4PaのArガス中で純Ptターゲットを用いたRFマグネトロンスパッタ法により、膜厚20nmのPt第1シード層40を形成した。
Pt第1シード層40を形成しなかったことを除いて実施例1の手順を繰り返して、磁気記録媒体を得た。
Fe45Pt55合金ターゲットのみを用いるRFマグネトロンスパッタ法によりFePt第1磁気記録層を形成したことを除いて実施例1の手順を繰り返して、磁気記録媒体を得た。
Pt第1シード層40を形成しなかったこと、およびFe45Pt55合金ターゲットのみを用いるDCマグネトロンスパッタ法によりFePt第1磁気記録層を形成したことを除いて実施例1の手順を繰り返して、磁気記録媒体を得た。
Fe45Pt55合金ターゲットおよび純Cuターゲットを用いるDCマグネトロンスパッタ法によりFePtCu第1磁気記録層を形成したことを除いて実施例1の手順を繰り返して、磁気記録媒体を得た。
図3Aから分かるように、Pt第1シード層40の上にFePt−Ti第1磁気記録層50を形成した実施例1の磁気記録媒体において、第1磁気記録層中のTi含有量が4at%以上12at%以下の場合に急激な保磁力Hcの増大が確認された。特に、Ti含有量が8at%の場合に、保磁力Hcが14.6kOe(1160A/mm)の最大値を示した。一方、図3Bから分かるように、(100)MgO単結晶非磁性基板10の上にFePtTi第1磁気記録層50を形成した比較例1の磁気記録媒体においては、Ti含有量の増加に伴う保磁力Hcの増大は認められるものの、その変化は実施例1の磁気記録媒体に比較して極めて緩やかであった。以上の結果から、Pt第1シード層40とFePt−Ti第1磁気記録層50との相互作用によって、著しく大きな保磁力Hcが得られることが分かる。
20 密着層
30 下地層
40 第1シード層
50 第1磁気記録層
60 保護層
70 第2シード層
80 第2磁気記録層
Claims (5)
- 非磁性基板と、第1シード層と、前記第1シード層上に形成された第1磁気記録層とを含み、
前記第1シード層は、Ptを含み、
前記第1磁気記録層は、1つまたは複数の磁性層を有し、
前記第1シード層と接触する磁性層は、Fe、PtおよびTiを含み、
前記第1シード層と接触する磁性層は、FeおよびPtを含むL10型規則合金を有する磁性結晶粒と、Tiを含む非磁性結晶粒界とからなるグラニュラー構造を有し、
前記第1シード層と接触する磁性層は、全原子数を基準として4at%以上12at%以下のTiを含む
ことを特徴とする磁気記録媒体。 - 非磁性基板と、第1シード層と、前記第1シード層上に形成された第1磁気記録層とを含み、
前記第1シード層は、Ptを含み、
前記第1磁気記録層は、1つまたは複数の磁性層を有し、
前記第1シード層と接触する磁性層は、Fe、PtおよびTiを含み、
前記第1シード層と接触する磁性層は、FeおよびPtを含むL1 0 型規則合金を有する磁性結晶粒と、Tiを含む非磁性結晶粒界とからなるグラニュラー構造を有し、
前記非磁性基板と前記第1シード層との間に、第2シード層および第2磁気記録層をさらに含み、前記第2磁気記録層は前記第1シード層と接触していることを特徴とする磁気記録媒体。 - 前記L10型規則合金は、Ni、Mn、Ag、AuおよびCrからなる群から選択される少なくとも1種の元素をさらに含むことを特徴とする請求項1または2に記載の磁気記録媒体。
- 前記第1磁気記録層は、1つの磁性層からなることを特徴とする請求項1または2に記載の磁気記録媒体。
- 前記非磁性基板と前記第1シード層との間に、ヒートシンク層、密着層、軟磁性裏打ち層、および下地層からなる群から選択される1つまたは複数の層をさらに含むことを特徴とする請求項1または2に記載の磁気記録媒体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014010590 | 2014-01-23 | ||
JP2014010590 | 2014-01-23 | ||
PCT/JP2015/000119 WO2015111384A1 (ja) | 2014-01-23 | 2015-01-13 | 垂直磁気記録媒体 |
Publications (2)
Publication Number | Publication Date |
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JPWO2015111384A1 JPWO2015111384A1 (ja) | 2017-03-23 |
JP6156518B2 true JP6156518B2 (ja) | 2017-07-05 |
Family
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Family Applications (1)
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JP2015558779A Active JP6156518B2 (ja) | 2014-01-23 | 2015-01-13 | 垂直磁気記録媒体 |
Country Status (6)
Country | Link |
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US (1) | US10504547B2 (ja) |
JP (1) | JP6156518B2 (ja) |
CN (1) | CN105849805B (ja) |
MY (1) | MY174423A (ja) |
SG (1) | SG11201602691UA (ja) |
WO (1) | WO2015111384A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017224371A (ja) * | 2016-06-15 | 2017-12-21 | 昭和電工株式会社 | 磁気記録媒体及び磁気記憶装置 |
MY185710A (en) * | 2016-06-23 | 2021-05-31 | Fuji Electric Co Ltd | Magnetic recording medium |
US10170518B2 (en) * | 2017-05-30 | 2019-01-01 | Samsung Electronics Co., Ltd. | Self-assembled pattern process for fabricating magnetic junctions usable in spin transfer torque applications |
US20180350399A1 (en) * | 2017-06-06 | 2018-12-06 | Seagate Technology Llc | Heat assisted magnetic recording media with co-based alloy |
CN113488584B (zh) * | 2021-06-23 | 2023-04-07 | 华中科技大学 | 基于FePt材料的磁化翻转器件、无外磁场翻转方法及应用 |
Family Cites Families (22)
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JP2001291230A (ja) | 2000-03-31 | 2001-10-19 | Sony Corp | 磁気記録媒体及びその製造方法 |
SG91343A1 (en) | 2000-07-19 | 2002-09-17 | Toshiba Kk | Perpendicular magnetic recording medium and magnetic recording apparatus |
JP2002092843A (ja) * | 2000-09-12 | 2002-03-29 | Toshiba Corp | 磁気記録媒体 |
JP3730518B2 (ja) | 2001-01-19 | 2006-01-05 | 株式会社東芝 | 磁気記録媒体 |
JP3680035B2 (ja) | 2002-03-29 | 2005-08-10 | 株式会社東芝 | 磁気記録装置及び磁気記録方法 |
JP4074181B2 (ja) | 2002-11-28 | 2008-04-09 | 株式会社東芝 | 垂直磁気記録媒体 |
US7282278B1 (en) * | 2003-07-02 | 2007-10-16 | Seagate Technology Llc | Tilted recording media with L10 magnetic layer |
JP2005222669A (ja) * | 2004-01-05 | 2005-08-18 | Fujitsu Ltd | 磁気記録媒体および磁気記憶装置 |
JP4069205B2 (ja) | 2004-03-29 | 2008-04-02 | 独立行政法人物質・材料研究機構 | 磁気記録媒体の製造方法 |
US7901737B2 (en) * | 2005-06-10 | 2011-03-08 | Canon Kabushiki Kaisha | Process for producing magnetic recording medium |
JP4642705B2 (ja) * | 2005-06-10 | 2011-03-02 | キヤノン株式会社 | 磁気記録媒体の製造方法 |
US8241766B2 (en) * | 2006-01-20 | 2012-08-14 | Seagate Technology Llc | Laminated exchange coupling adhesion (LECA) media for heat assisted magnetic recording |
JP4583345B2 (ja) * | 2006-07-11 | 2010-11-17 | 富士電機デバイステクノロジー株式会社 | 垂直磁気記録媒体 |
US7892664B2 (en) * | 2007-11-28 | 2011-02-22 | Seagate Technology Llc | Magnetic recording media having a chemically ordered magnetic layer |
JP2009158053A (ja) | 2007-12-27 | 2009-07-16 | Hitachi Global Storage Technologies Netherlands Bv | 傾斜記録用磁気記録媒体及びその製造方法 |
JP5670638B2 (ja) * | 2010-01-26 | 2015-02-18 | 昭和電工株式会社 | 熱アシスト磁気記録媒体及び磁気記録再生装置 |
WO2011108030A1 (en) * | 2010-03-05 | 2011-09-09 | Hitachi, Ltd. | Computer system and recording medium using a virtual file system in a hierarchical storage management |
JP2012048784A (ja) * | 2010-08-26 | 2012-03-08 | Hitachi Ltd | 垂直磁気記録媒体及びその製造方法 |
JP5786347B2 (ja) * | 2011-02-02 | 2015-09-30 | 富士電機株式会社 | 熱アシスト記録装置用の磁気記録媒体およびその製造方法 |
US9093101B2 (en) * | 2011-02-28 | 2015-07-28 | Seagate Technology Llc | Stack including a magnetic zero layer |
JP5145437B2 (ja) | 2011-03-02 | 2013-02-20 | 株式会社日立製作所 | 磁気記録媒体 |
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-
2015
- 2015-01-13 US US15/027,985 patent/US10504547B2/en active Active
- 2015-01-13 MY MYPI2016701225A patent/MY174423A/en unknown
- 2015-01-13 JP JP2015558779A patent/JP6156518B2/ja active Active
- 2015-01-13 WO PCT/JP2015/000119 patent/WO2015111384A1/ja active Application Filing
- 2015-01-13 CN CN201580002172.5A patent/CN105849805B/zh active Active
- 2015-01-13 SG SG11201602691UA patent/SG11201602691UA/en unknown
Also Published As
Publication number | Publication date |
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CN105849805B (zh) | 2019-06-18 |
US20160254017A1 (en) | 2016-09-01 |
JPWO2015111384A1 (ja) | 2017-03-23 |
WO2015111384A1 (ja) | 2015-07-30 |
MY174423A (en) | 2020-04-17 |
SG11201602691UA (en) | 2016-05-30 |
CN105849805A (zh) | 2016-08-10 |
US10504547B2 (en) | 2019-12-10 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |