JP6343344B2 - マイクロリソグラフィ投影露光装置の照明系 - Google Patents

マイクロリソグラフィ投影露光装置の照明系 Download PDF

Info

Publication number
JP6343344B2
JP6343344B2 JP2016533545A JP2016533545A JP6343344B2 JP 6343344 B2 JP6343344 B2 JP 6343344B2 JP 2016533545 A JP2016533545 A JP 2016533545A JP 2016533545 A JP2016533545 A JP 2016533545A JP 6343344 B2 JP6343344 B2 JP 6343344B2
Authority
JP
Japan
Prior art keywords
light
object area
illumination system
illumination
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016533545A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016541021A (ja
Inventor
マルクス デギュンター
マルクス デギュンター
ウラディミール ダヴィデンコ
ウラディミール ダヴィデンコ
トーマス コルブ
トーマス コルブ
フランク シュレセナー
フランク シュレセナー
ステファニー ヒルト
ステファニー ヒルト
ウルフガング ホーゲル
ウルフガング ホーゲル
Original Assignee
カール・ツァイス・エスエムティー・ゲーエムベーハー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by カール・ツァイス・エスエムティー・ゲーエムベーハー filed Critical カール・ツァイス・エスエムティー・ゲーエムベーハー
Publication of JP2016541021A publication Critical patent/JP2016541021A/ja
Application granted granted Critical
Publication of JP6343344B2 publication Critical patent/JP6343344B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/70391—Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Microscoopes, Condenser (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
JP2016533545A 2013-11-22 2014-11-13 マイクロリソグラフィ投影露光装置の照明系 Active JP6343344B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13194135 2013-11-22
EP13194135.3 2013-11-22
PCT/EP2014/003049 WO2015074746A1 (en) 2013-11-22 2014-11-13 Illumination system of a microlithographic projection exposure apparatus

Publications (2)

Publication Number Publication Date
JP2016541021A JP2016541021A (ja) 2016-12-28
JP6343344B2 true JP6343344B2 (ja) 2018-06-13

Family

ID=49626852

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2016533545A Active JP6343344B2 (ja) 2013-11-22 2014-11-13 マイクロリソグラフィ投影露光装置の照明系
JP2014236389A Active JP6034845B2 (ja) 2013-11-22 2014-11-21 マイクロリソグラフィ投影露光装置の照明系
JP2014236390A Pending JP2015111673A (ja) 2013-11-22 2014-11-21 マイクロリソグラフィ投影露光装置の照明系
JP2016210859A Active JP6434473B2 (ja) 2013-11-22 2016-10-27 マイクロリソグラフィ投影露光装置の照明系

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2014236389A Active JP6034845B2 (ja) 2013-11-22 2014-11-21 マイクロリソグラフィ投影露光装置の照明系
JP2014236390A Pending JP2015111673A (ja) 2013-11-22 2014-11-21 マイクロリソグラフィ投影露光装置の照明系
JP2016210859A Active JP6434473B2 (ja) 2013-11-22 2016-10-27 マイクロリソグラフィ投影露光装置の照明系

Country Status (7)

Country Link
US (3) US9310690B2 (enExample)
EP (2) EP2876498B1 (enExample)
JP (4) JP6343344B2 (enExample)
KR (3) KR101922314B1 (enExample)
CN (3) CN105745580B (enExample)
TW (1) TWI638238B (enExample)
WO (1) WO2015074746A1 (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014203040A1 (de) 2014-02-19 2015-08-20 Carl Zeiss Smt Gmbh Beleuchtungssystem einer mikrolithographischen Projektionsbelichtungsanlage und Verfahren zum Betreiben eines solchen
DE102014203041A1 (de) 2014-02-19 2015-08-20 Carl Zeiss Smt Gmbh Beleuchtungssystem einer mikrolithographischen Projektionsbelichtungsanlage und Verfahren zum Betreiben eines solchen
WO2016184560A1 (en) * 2015-05-21 2016-11-24 Carl Zeiss Smt Gmbh Method of operating a microlithographic projection apparatus
CN105068381A (zh) * 2015-07-27 2015-11-18 江苏影速光电技术有限公司 一种曝光机光阑承载结构及曝光机光阑更换方法
TWI575300B (zh) * 2015-08-31 2017-03-21 中強光電股份有限公司 投影裝置以及照明系統
WO2017050360A1 (en) * 2015-09-23 2017-03-30 Carl Zeiss Smt Gmbh Method of operating a microlithographic projection apparatus and illuminations system of such an apparatus
DE102015221991A1 (de) * 2015-11-09 2017-05-11 Carl Zeiss Microscopy Gmbh Mikroskopierverfahren zur Ermittlung eines Kontrastbildes und Mikroskop
DE102015224521B4 (de) 2015-12-08 2018-06-21 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsanlage und Verfahren zum Betreiben einer solchen Anlage
DE102015224522B4 (de) 2015-12-08 2018-06-21 Carl Zeiss Smt Gmbh Beleuchtungssystem einer mikrolithographischen Projektionsanlage und Verfahren zum Betreiben eines solchen Systems
WO2017108448A1 (en) * 2015-12-22 2017-06-29 Carl Zeiss Smt Gmbh Illumination system of a microlithographic apparatus
CN106933049B (zh) * 2015-12-30 2020-06-16 上海微电子装备（集团）股份有限公司 一种用于半导体光刻的曝光系统与曝光方法
US10061201B2 (en) 2016-10-24 2018-08-28 Hrl Laboratories, Llc Bottom up apparatus design for formation of self-propagating photopolymer waveguides
EP3551745A4 (en) 2016-12-12 2020-07-15 Xcella Biosciences, Inc. SCREENING METHODS AND SYSTEMS USING MICROCAPILLARY NETWORKS
JP6951446B2 (ja) * 2016-12-20 2021-10-20 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 感光性の層を露光するための装置および方法
WO2018113918A1 (de) * 2016-12-20 2018-06-28 Ev Group E. Thallner Gmbh Vorrichtung und verfahren zur belichtung einer lichtempfindlichen schicht
US11156626B2 (en) 2016-12-30 2021-10-26 xCella Biosciences, Inc. Multi-stage sample recovery system
CN109654392B (zh) * 2017-01-11 2020-09-04 哈尔滨理工大学 第一遮挡板和具有第一遮挡板的鼻孔照明装置
US11099007B2 (en) * 2017-02-16 2021-08-24 Nikon Corporation Test of operational status of a digital scanner during lithographic exposure process
CN107421439B (zh) * 2017-04-21 2019-05-14 上海交通大学 一种无成像目标显著性检测与坐标跟踪系统及方法
US11175487B2 (en) 2017-06-19 2021-11-16 Suss Microtec Photonic Systems Inc. Optical distortion reduction in projection systems
EP3642674B1 (en) 2017-06-19 2023-03-15 SUSS MicroTec Solutions GmbH & Co. KG Magnification compensation and/or beam steering in optical systems
WO2019064503A1 (ja) * 2017-09-29 2019-04-04 株式会社ニコン 電子ビーム装置、照明光学系、及びデバイス製造方法
WO2019064502A1 (ja) * 2017-09-29 2019-04-04 株式会社ニコン 電子ビーム装置及びデバイス製造方法
JP7020859B2 (ja) 2017-10-24 2022-02-16 キヤノン株式会社 照明光学系、露光装置および物品の製造方法
EP3744468B1 (en) * 2018-03-23 2024-03-06 Primetals Technologies Japan, Ltd. Laser processing device, and method for adjusting a laser processing head
KR102604859B1 (ko) * 2018-06-19 2023-11-21 에베 그룹 에. 탈너 게엠베하 이미지 포인트 노출 방법 및 장치
US10503076B1 (en) * 2018-08-29 2019-12-10 Applied Materials, Inc. Reserving spatial light modulator sections to address field non-uniformities
CN109116554B (zh) * 2018-10-11 2020-12-04 北京环境特性研究所 光学积分器的设计方法
EP3640735A1 (en) * 2018-10-18 2020-04-22 ASML Netherlands B.V. Methods and apparatus for inspection of a structure and associated apparatuses
US12318775B2 (en) 2018-12-06 2025-06-03 xCella Biosciences, Inc. Lateral loading of microcapillary arrays
EP3939246B1 (en) * 2019-03-12 2025-02-12 Lumus Ltd. Image projector
CN111856745B (zh) * 2019-04-30 2023-03-17 上海微电子装备（集团）股份有限公司 一种光照射装置
EP3736550A1 (en) * 2019-05-10 2020-11-11 X-Rite Switzerland GmbH Illumination device for a spectrophotometer having integrated mixing optics, and method for illuminating a sample
US20240027917A1 (en) * 2020-08-18 2024-01-25 Nikon Corporation Exposure apparatus, measuring device, measuring method, and device manufacturing method
US11366307B2 (en) * 2020-08-27 2022-06-21 Kla Corporation Programmable and reconfigurable mask with MEMS micro-mirror array for defect detection
CN113189848B (zh) * 2021-04-21 2024-02-13 之江实验室 一种基于光纤阵列的多通道并行式超分辨直写式光刻系统
CN115390362A (zh) * 2021-05-25 2022-11-25 赫智科技(苏州)有限公司 一种4k光刻的方法
US20230123834A1 (en) * 2021-10-19 2023-04-20 Meta Platforms Technologies, Llc Euv lithography using polymer crystal based reticle
CN115128809B (zh) * 2022-05-17 2023-11-28 南京工业职业技术大学 一种实现全息波导显示系统均匀成像的光栅效率分布表征与优化方法
DE102022116214B4 (de) * 2022-06-29 2024-06-13 Carl Zeiss Industrielle Messtechnik Gmbh Messkamera und Verfahren zur zweidimensionalen Vermessung von Gegenständen
DE102024205430A1 (de) * 2024-06-13 2025-12-18 Carl Zeiss Smt Gmbh Optomechanisches System für die Projektionslithographie

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5517279A (en) 1993-08-30 1996-05-14 Hugle; William B. Lens array photolithography
JP2674578B2 (ja) * 1995-08-29 1997-11-12 株式会社ニコン 走査露光装置及び露光方法
JP2674579B2 (ja) * 1995-08-29 1997-11-12 株式会社ニコン 走査露光装置および走査露光方法
US6404499B1 (en) 1998-04-21 2002-06-11 Asml Netherlands B.V. Lithography apparatus with filters for optimizing uniformity of an image
EP1107064A3 (en) 1999-12-06 2004-12-29 Olympus Optical Co., Ltd. Exposure apparatus
GB9930529D0 (en) * 1999-12-23 2000-02-16 Screen Tech Ltd Optical arrangement for flat-panel displays
JP4838430B2 (ja) * 2001-01-26 2011-12-14 キヤノン株式会社 露光装置及びデバイス製造方法
GB0107076D0 (en) * 2001-03-21 2001-05-09 Screen Technology Ltd Liquid-crystal display using emissive elements
KR100576746B1 (ko) 2001-06-01 2006-05-03 에이에스엠엘 네델란즈 비.브이. 리소그래피장치, 디바이스제조방법, 그 디바이스,제어시스템, 컴퓨터프로그램, 및 컴퓨터프로그램물
KR100480620B1 (ko) 2002-09-19 2005-03-31 삼성전자주식회사 마이크로 미러 어레이를 구비한 노광 장치 및 이를 이용한노광 방법
DE10343333A1 (de) * 2003-09-12 2005-04-14 Carl Zeiss Smt Ag Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage
KR101159867B1 (ko) * 2003-09-12 2012-06-26 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투사 노출 장치용 조명 시스템
WO2005040927A2 (en) 2003-10-18 2005-05-06 Carl Zeiss Smt Ag Device and method for illumination dose adjustments in microlithography
US20060087634A1 (en) 2004-10-25 2006-04-27 Brown Jay M Dynamic illumination uniformity and shape control for lithography
CN100521089C (zh) * 2004-12-27 2009-07-29 株式会社尼康 光学积分器、照明光学装置、曝光装置、方法及元件制法
TWI456267B (zh) * 2006-02-17 2014-10-11 Zeiss Carl Smt Gmbh 用於微影投射曝光設備之照明系統
JP2007279113A (ja) * 2006-04-03 2007-10-25 Nikon Corp 走査型露光装置及びデバイスの製造方法
US7932993B2 (en) 2006-09-16 2011-04-26 Wenhui Mei Divided sub-image array scanning and exposing system
US8334935B2 (en) 2006-12-19 2012-12-18 Thomson Licensing High resolution DMD projection system
WO2009026947A1 (en) 2007-08-30 2009-03-05 Carl Zeiss Smt Ag Illumination system for illuminating a mask in a microlithographic projection exposure apparatus
US8451427B2 (en) * 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
US20090091730A1 (en) * 2007-10-03 2009-04-09 Nikon Corporation Spatial light modulation unit, illumination apparatus, exposure apparatus, and device manufacturing method
KR101562073B1 (ko) * 2007-10-16 2015-10-21 가부시키가이샤 니콘 조명 광학 시스템, 노광 장치 및 디바이스 제조 방법
EP2179329A1 (en) * 2007-10-16 2010-04-28 Nikon Corporation Illumination optical system, exposure apparatus, and device manufacturing method
US8379187B2 (en) * 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
JP5418230B2 (ja) * 2007-11-06 2014-02-19 株式会社ニコン 露光方法、及び露光装置
WO2009060744A1 (ja) 2007-11-06 2009-05-14 Nikon Corporation 照明光学装置及び露光装置
JP5326259B2 (ja) * 2007-11-08 2013-10-30 株式会社ニコン 照明光学装置、露光装置、およびデバイス製造方法
NL1036108A1 (nl) * 2007-11-09 2009-05-12 Asml Netherlands Bv Device Manufacturing Method and Lithographic Apparatus, and Computer Program Product.
EP2243047B1 (en) * 2008-02-15 2021-03-31 Carl Zeiss SMT GmbH Facet mirror for use in a projection exposure apparatus for microlithography
DE102008001511A1 (de) 2008-04-30 2009-11-05 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Mikrolithografie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik
JP5048869B2 (ja) * 2008-05-20 2012-10-17 ホ チョン，ジン マスクレス露光装置用光学部品
DE102008002749A1 (de) 2008-06-27 2009-12-31 Carl Zeiss Smt Ag Beleuchtungsoptik für die Mikrolithografie
EP2146248B1 (en) 2008-07-16 2012-08-29 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus
JPWO2010024106A1 (ja) * 2008-08-28 2012-01-26 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
JP5403244B2 (ja) * 2009-07-16 2014-01-29 株式会社ニコン 空間光変調ユニット、照明光学系、露光装置、およびデバイス製造方法
KR101624009B1 (ko) * 2009-07-31 2016-05-24 칼 짜이스 에스엠티 게엠베하 광학 빔 편향 소자 및 조정 방법
JP2011108851A (ja) * 2009-11-17 2011-06-02 Canon Inc 露光装置及びデバイスの製造方法
NL2005331A (en) 2009-11-18 2011-05-19 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
DE102009054540B4 (de) 2009-12-11 2011-11-10 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Mikrolithographie
JP2012004561A (ja) 2010-06-16 2012-01-05 Nikon Corp 照明方法、照明光学装置、及び露光装置
CN103097955B (zh) * 2010-08-30 2015-08-19 卡尔蔡司Smt有限责任公司 微光刻投射曝光装置的照明系统
JP2012069656A (ja) 2010-09-22 2012-04-05 Nikon Corp 空間光変調器、照明装置及び露光装置、並びにデバイス製造方法
JP2012099686A (ja) 2010-11-04 2012-05-24 Nikon Corp 光源形成方法、露光方法、及びデバイス製造方法
WO2012100791A1 (en) 2011-01-29 2012-08-02 Carl Zeiss Smt Gmbh Illumination system of a microlithographic projection exposure apparatus
US8823921B2 (en) 2011-08-19 2014-09-02 Ultratech, Inc. Programmable illuminator for a photolithography system
US8390917B1 (en) 2011-08-24 2013-03-05 Palo Alto Research Center Incorporated Multiple line single-pass imaging using spatial light modulator and anamorphic projection optics

Also Published As

Publication number Publication date
JP2015111672A (ja) 2015-06-18
US20150146184A1 (en) 2015-05-28
TW201523167A (zh) 2015-06-16
US20150146183A1 (en) 2015-05-28
JP2015111673A (ja) 2015-06-18
EP2876498B1 (en) 2017-05-24
US9500954B2 (en) 2016-11-22
CN105745580A (zh) 2016-07-06
KR101751581B1 (ko) 2017-06-27
CN105745580B (zh) 2018-08-21
CN104656379B (zh) 2018-01-30
EP2876499A1 (en) 2015-05-27
JP6434473B2 (ja) 2018-12-05
CN104656379A (zh) 2015-05-27
KR20150059623A (ko) 2015-06-01
JP6034845B2 (ja) 2016-11-30
US20160209759A1 (en) 2016-07-21
TWI638238B (zh) 2018-10-11
CN104656378B (zh) 2018-06-05
JP2017054131A (ja) 2017-03-16
KR101736549B1 (ko) 2017-05-16
US9310690B2 (en) 2016-04-12
KR20150059619A (ko) 2015-06-01
KR101922314B1 (ko) 2019-02-13
EP2876499B1 (en) 2017-05-24
CN104656378A (zh) 2015-05-27
EP2876498A1 (en) 2015-05-27
JP2016541021A (ja) 2016-12-28
US9910359B2 (en) 2018-03-06
KR20160088365A (ko) 2016-07-25
WO2015074746A1 (en) 2015-05-28

Similar Documents

Publication Publication Date Title
JP6343344B2 (ja) マイクロリソグラフィ投影露光装置の照明系
JP6016169B2 (ja) マイクロリソグラフィ投影露光装置の照明系
JP2010537414A (ja) マイクロリソグラフィ投影露光装置においてマスクを照明するための照明システム
KR20130060281A (ko) 마이크로리소그래픽 투영 노광 장치의 조명 시스템
TW201702756A (zh) 微影投射設備的操作方法
EP3295249B1 (en) Illumination system of a microlithographic projection apparatus and method of adjusting an irradiance distribution in such a system
JP5864771B2 (ja) マイクロリソグラフィ投影露光装置の照明系
JP6193963B2 (ja) マイクロリソグラフィ投影露光装置においてマスクを照明するための照明システム
JP5187631B2 (ja) 補正ユニット、照明光学系、露光装置、およびデバイス製造方法
JP6652948B2 (ja) マイクロリソグラフィ投影露光装置の照明システム
JP5860494B2 (ja) マイクロリソグラフィ投影露光装置においてマスクを照明するための照明システム
JP2010177304A (ja) 補正ユニット、照明光学系、露光装置、およびデバイス製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160523

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170410

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170710

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20171204

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180403

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20180411

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180507

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180518

R150 Certificate of patent or registration of utility model

Ref document number: 6343344

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250