JP6339067B2 - 直交下層ダミーフィルを有するオーバレイターゲット - Google Patents

直交下層ダミーフィルを有するオーバレイターゲット Download PDF

Info

Publication number
JP6339067B2
JP6339067B2 JP2015514130A JP2015514130A JP6339067B2 JP 6339067 B2 JP6339067 B2 JP 6339067B2 JP 2015514130 A JP2015514130 A JP 2015514130A JP 2015514130 A JP2015514130 A JP 2015514130A JP 6339067 B2 JP6339067 B2 JP 6339067B2
Authority
JP
Japan
Prior art keywords
overlay
pattern elements
target
segmented
dummy fill
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015514130A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015520377A5 (enExample
JP2015520377A (ja
Inventor
ヌリエル アミル
ヌリエル アミル
ガイ コーエン
ガイ コーエン
ウラジミール レヴィンスキ
ウラジミール レヴィンスキ
ミカエル アデル
ミカエル アデル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Corp filed Critical KLA Corp
Publication of JP2015520377A publication Critical patent/JP2015520377A/ja
Publication of JP2015520377A5 publication Critical patent/JP2015520377A5/ja
Application granted granted Critical
Publication of JP6339067B2 publication Critical patent/JP6339067B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2015514130A 2012-05-22 2013-05-21 直交下層ダミーフィルを有するオーバレイターゲット Active JP6339067B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261650269P 2012-05-22 2012-05-22
US61/650,269 2012-05-22
PCT/US2013/042089 WO2013177208A1 (en) 2012-05-22 2013-05-21 Overlay targets with orthogonal underlayer dummyfill

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018090295A Division JP6570018B2 (ja) 2012-05-22 2018-05-09 オーバレイターゲット、オーバレイ計測を実行するシステム、及び方法

Publications (3)

Publication Number Publication Date
JP2015520377A JP2015520377A (ja) 2015-07-16
JP2015520377A5 JP2015520377A5 (enExample) 2016-07-07
JP6339067B2 true JP6339067B2 (ja) 2018-06-06

Family

ID=49624297

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2015514130A Active JP6339067B2 (ja) 2012-05-22 2013-05-21 直交下層ダミーフィルを有するオーバレイターゲット
JP2018090295A Active JP6570018B2 (ja) 2012-05-22 2018-05-09 オーバレイターゲット、オーバレイ計測を実行するシステム、及び方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2018090295A Active JP6570018B2 (ja) 2012-05-22 2018-05-09 オーバレイターゲット、オーバレイ計測を実行するシステム、及び方法

Country Status (5)

Country Link
JP (2) JP6339067B2 (enExample)
KR (2) KR102272361B1 (enExample)
CN (1) CN103814429A (enExample)
SG (1) SG2014008841A (enExample)
WO (1) WO2013177208A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107533020B (zh) * 2015-04-28 2020-08-14 科磊股份有限公司 计算上高效的基于x射线的叠盖测量系统与方法
KR102344379B1 (ko) * 2015-05-13 2021-12-28 삼성전자주식회사 실딩 패턴을 갖는 반도체 소자
KR102454206B1 (ko) * 2016-03-14 2022-10-12 삼성전자주식회사 웨이퍼 정렬 마크 및 웨이퍼 정렬 마크의 오차 측정 방법
IL270171B2 (en) * 2017-04-28 2023-12-01 Asml Netherlands Bv Method and apparatus for metrology and related computer software
US10677588B2 (en) * 2018-04-09 2020-06-09 Kla-Tencor Corporation Localized telecentricity and focus optimization for overlay metrology
CN115485824B (zh) * 2020-05-05 2024-04-16 科磊股份有限公司 用于高表面型态半导体堆叠的计量目标
KR102838579B1 (ko) 2020-12-10 2025-07-28 삼성전자주식회사 반도체 장치
KR102566129B1 (ko) 2022-01-20 2023-08-16 (주) 오로스테크놀로지 모아레 패턴을 형성하는 오버레이 마크, 이를 이용한 오버레이 측정방법, 및 반도체 소자의 제조방법
US20250272812A1 (en) * 2024-02-26 2025-08-28 Kla Corporation Side-by-side off-center die overlay target

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2829211B2 (ja) * 1993-01-07 1998-11-25 株式会社東芝 合せずれ測定方法
JPH07226369A (ja) * 1994-02-09 1995-08-22 Nikon Corp アライメント方法及び装置
JP4038320B2 (ja) * 2000-04-17 2008-01-23 株式会社東芝 半導体集積装置
JP2002124458A (ja) * 2000-10-18 2002-04-26 Nikon Corp 重ね合わせ検査装置および重ね合わせ検査方法
US6716559B2 (en) * 2001-12-13 2004-04-06 International Business Machines Corporation Method and system for determining overlay tolerance
JP4525067B2 (ja) * 2003-12-12 2010-08-18 株式会社ニコン 位置ずれ検出用マーク
US20050286052A1 (en) * 2004-06-23 2005-12-29 Kevin Huggins Elongated features for improved alignment process integration
US7526749B2 (en) * 2005-10-31 2009-04-28 Kla-Tencor Technologies Corporation Methods and apparatus for designing and using micro-targets in overlay metrology
US7291562B2 (en) * 2005-12-09 2007-11-06 Yung-Tin Chen Method to form topography in a deposited layer above a substrate
NL2003404A (en) * 2008-09-16 2010-03-17 Asml Netherlands Bv Inspection method and apparatus, substrate, lithographic apparatus, lithographic processing cell and device manufacturing method.
US8804137B2 (en) * 2009-08-31 2014-08-12 Kla-Tencor Corporation Unique mark and method to determine critical dimension uniformity and registration of reticles combined with wafer overlay capability
NL2006228A (en) * 2010-03-17 2011-09-20 Asml Netherlands Bv Alignment mark, substrate, set of patterning devices, and device manufacturing method.
US9927718B2 (en) * 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems

Also Published As

Publication number Publication date
KR102272361B1 (ko) 2021-07-05
KR20210086716A (ko) 2021-07-08
WO2013177208A1 (en) 2013-11-28
KR102473825B1 (ko) 2022-12-02
KR20150013428A (ko) 2015-02-05
CN103814429A (zh) 2014-05-21
SG2014008841A (en) 2015-01-29
JP2018128699A (ja) 2018-08-16
JP2015520377A (ja) 2015-07-16
JP6570018B2 (ja) 2019-09-04

Similar Documents

Publication Publication Date Title
JP6570018B2 (ja) オーバレイターゲット、オーバレイ計測を実行するシステム、及び方法
US10890436B2 (en) Overlay targets with orthogonal underlayer dummyfill
CN104520982B (zh) 类装置散射测量叠盖目标
KR102119288B1 (ko) 이미징 오버레이 계측 타겟 및 이미징 오버레이를 계측하기 위한 장치 및 방법
JP6043662B2 (ja) 検査方法および検査装置
US9710905B2 (en) Mask inspection apparatus and mask inspection method
US9633427B2 (en) Method of measuring a property of a target structure, inspection apparatus, lithographic system and device manufacturing method
JP6793840B2 (ja) メトロロジ方法、装置、及びコンピュータプログラム
KR102025214B1 (ko) 계측 방법 및 장치, 컴퓨터 프로그램 및 리소그래피 시스템
JP2020038384A (ja) 計測方法、コンピュータ製品およびシステム
JP5624326B2 (ja) ウェーハ上に形成されたアレイ領域のための検査領域のエッジを正確に識別する方法、及び、ウェーハ上に形成されたアレイ領域に検知された欠陥をビニングする方法
JP5979626B2 (ja) 像内の構造の位置を決定する方法及び該方法を実施するための位置測定装置
US10234775B2 (en) Exposure apparatus, exposure method, and method of manufacturing article
TW201629905A (zh) 臨界尺寸一致性增強技術及裝置
JP6472447B2 (ja) フォトマスク欠陥性における変化の監視
TW201719783A (zh) 用於模型化基礎臨界尺寸測量之技術及系統
US9885961B1 (en) Partly disappearing targets
JP2016194482A (ja) 検査方法および検査装置
JP5514754B2 (ja) 検査装置および検査方法
US20160042505A1 (en) Mask inspection apparatus and mask inspection method
JP6878247B2 (ja) パターン検査方法およびパターン検査装置
JP6903133B2 (ja) 複数イメージ粒子検出のシステム及び方法
JP4131728B2 (ja) 画像作成方法、画像作成装置及びパターン検査装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160518

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160518

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170221

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170517

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20171003

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171225

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180410

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180509

R150 Certificate of patent or registration of utility model

Ref document number: 6339067

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250