KR102272361B1 - 직교 하지층 더미필을 갖는 오버레이 타겟 - Google Patents

직교 하지층 더미필을 갖는 오버레이 타겟 Download PDF

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KR102272361B1
KR102272361B1 KR1020147016173A KR20147016173A KR102272361B1 KR 102272361 B1 KR102272361 B1 KR 102272361B1 KR 1020147016173 A KR1020147016173 A KR 1020147016173A KR 20147016173 A KR20147016173 A KR 20147016173A KR 102272361 B1 KR102272361 B1 KR 102272361B1
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South Korea
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overlay
pattern elements
overlay target
target structure
dummyfill
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Korean (ko)
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KR20150013428A (ko
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뉴리엘 아미르
가이 코헨
블라디미르 레빈스키
마이클 아델
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케이엘에이 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Physical Vapour Deposition (AREA)
KR1020147016173A 2012-05-22 2013-05-21 직교 하지층 더미필을 갖는 오버레이 타겟 Active KR102272361B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020217020062A KR102473825B1 (ko) 2012-05-22 2013-05-21 직교 하지층 더미필을 갖는 오버레이 타겟

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261650269P 2012-05-22 2012-05-22
US61/650,269 2012-05-22
PCT/US2013/042089 WO2013177208A1 (en) 2012-05-22 2013-05-21 Overlay targets with orthogonal underlayer dummyfill

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020217020062A Division KR102473825B1 (ko) 2012-05-22 2013-05-21 직교 하지층 더미필을 갖는 오버레이 타겟

Publications (2)

Publication Number Publication Date
KR20150013428A KR20150013428A (ko) 2015-02-05
KR102272361B1 true KR102272361B1 (ko) 2021-07-05

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KR1020217020062A Active KR102473825B1 (ko) 2012-05-22 2013-05-21 직교 하지층 더미필을 갖는 오버레이 타겟
KR1020147016173A Active KR102272361B1 (ko) 2012-05-22 2013-05-21 직교 하지층 더미필을 갖는 오버레이 타겟

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Country Status (5)

Country Link
JP (2) JP6339067B2 (enExample)
KR (2) KR102473825B1 (enExample)
CN (1) CN103814429A (enExample)
SG (1) SG2014008841A (enExample)
WO (1) WO2013177208A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107533020B (zh) * 2015-04-28 2020-08-14 科磊股份有限公司 计算上高效的基于x射线的叠盖测量系统与方法
KR102344379B1 (ko) * 2015-05-13 2021-12-28 삼성전자주식회사 실딩 패턴을 갖는 반도체 소자
KR102454206B1 (ko) * 2016-03-14 2022-10-12 삼성전자주식회사 웨이퍼 정렬 마크 및 웨이퍼 정렬 마크의 오차 측정 방법
WO2018197198A1 (en) * 2017-04-28 2018-11-01 Asml Netherlands B.V. Metrology method and apparatus and associated computer program
US10677588B2 (en) * 2018-04-09 2020-06-09 Kla-Tencor Corporation Localized telecentricity and focus optimization for overlay metrology
CN115485824B (zh) * 2020-05-05 2024-04-16 科磊股份有限公司 用于高表面型态半导体堆叠的计量目标
KR102838579B1 (ko) 2020-12-10 2025-07-28 삼성전자주식회사 반도체 장치
KR102566129B1 (ko) 2022-01-20 2023-08-16 (주) 오로스테크놀로지 모아레 패턴을 형성하는 오버레이 마크, 이를 이용한 오버레이 측정방법, 및 반도체 소자의 제조방법
US20250272812A1 (en) * 2024-02-26 2025-08-28 Kla Corporation Side-by-side off-center die overlay target

Citations (3)

* Cited by examiner, † Cited by third party
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JP2002124458A (ja) * 2000-10-18 2002-04-26 Nikon Corp 重ね合わせ検査装置および重ね合わせ検査方法
JP2008503897A (ja) * 2004-06-23 2008-02-07 インテル コーポレイション 位置合わせ処理プロセスの改良された統合を提供する細長い構造物
US20120033215A1 (en) 2010-08-03 2012-02-09 Kla-Tecor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems

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JP2829211B2 (ja) * 1993-01-07 1998-11-25 株式会社東芝 合せずれ測定方法
JPH07226369A (ja) * 1994-02-09 1995-08-22 Nikon Corp アライメント方法及び装置
JP4038320B2 (ja) * 2000-04-17 2008-01-23 株式会社東芝 半導体集積装置
US6716559B2 (en) * 2001-12-13 2004-04-06 International Business Machines Corporation Method and system for determining overlay tolerance
JP4525067B2 (ja) * 2003-12-12 2010-08-18 株式会社ニコン 位置ずれ検出用マーク
US7526749B2 (en) * 2005-10-31 2009-04-28 Kla-Tencor Technologies Corporation Methods and apparatus for designing and using micro-targets in overlay metrology
US7291562B2 (en) * 2005-12-09 2007-11-06 Yung-Tin Chen Method to form topography in a deposited layer above a substrate
NL2003404A (en) * 2008-09-16 2010-03-17 Asml Netherlands Bv Inspection method and apparatus, substrate, lithographic apparatus, lithographic processing cell and device manufacturing method.
US8804137B2 (en) * 2009-08-31 2014-08-12 Kla-Tencor Corporation Unique mark and method to determine critical dimension uniformity and registration of reticles combined with wafer overlay capability
NL2006228A (en) * 2010-03-17 2011-09-20 Asml Netherlands Bv Alignment mark, substrate, set of patterning devices, and device manufacturing method.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002124458A (ja) * 2000-10-18 2002-04-26 Nikon Corp 重ね合わせ検査装置および重ね合わせ検査方法
JP2008503897A (ja) * 2004-06-23 2008-02-07 インテル コーポレイション 位置合わせ処理プロセスの改良された統合を提供する細長い構造物
US20120033215A1 (en) 2010-08-03 2012-02-09 Kla-Tecor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems

Also Published As

Publication number Publication date
KR102473825B1 (ko) 2022-12-02
KR20150013428A (ko) 2015-02-05
SG2014008841A (en) 2015-01-29
WO2013177208A1 (en) 2013-11-28
KR20210086716A (ko) 2021-07-08
JP6339067B2 (ja) 2018-06-06
JP2015520377A (ja) 2015-07-16
JP6570018B2 (ja) 2019-09-04
CN103814429A (zh) 2014-05-21
JP2018128699A (ja) 2018-08-16

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