JP6338386B2 - リソグラフィ装置、及び物品の製造方法 - Google Patents

リソグラフィ装置、及び物品の製造方法 Download PDF

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Publication number
JP6338386B2
JP6338386B2 JP2014017744A JP2014017744A JP6338386B2 JP 6338386 B2 JP6338386 B2 JP 6338386B2 JP 2014017744 A JP2014017744 A JP 2014017744A JP 2014017744 A JP2014017744 A JP 2014017744A JP 6338386 B2 JP6338386 B2 JP 6338386B2
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JP
Japan
Prior art keywords
axis
measurement
optical
substrate
lithographic apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2014017744A
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English (en)
Japanese (ja)
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JP2015146342A (ja
JP2015146342A5 (https=
Inventor
伊藤　敦史
敦史 伊藤
是永　伸茂
伸茂 是永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014017744A priority Critical patent/JP6338386B2/ja
Priority to US14/590,379 priority patent/US9547242B2/en
Publication of JP2015146342A publication Critical patent/JP2015146342A/ja
Publication of JP2015146342A5 publication Critical patent/JP2015146342A5/ja
Application granted granted Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G01B9/02027—Two or more interferometric channels or interferometers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Electron Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2014017744A 2014-01-31 2014-01-31 リソグラフィ装置、及び物品の製造方法 Expired - Fee Related JP6338386B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014017744A JP6338386B2 (ja) 2014-01-31 2014-01-31 リソグラフィ装置、及び物品の製造方法
US14/590,379 US9547242B2 (en) 2014-01-31 2015-01-06 Lithography apparatus, and method of manufacturing article

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014017744A JP6338386B2 (ja) 2014-01-31 2014-01-31 リソグラフィ装置、及び物品の製造方法

Publications (3)

Publication Number Publication Date
JP2015146342A JP2015146342A (ja) 2015-08-13
JP2015146342A5 JP2015146342A5 (https=) 2017-03-02
JP6338386B2 true JP6338386B2 (ja) 2018-06-06

Family

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Family Applications (1)

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JP2014017744A Expired - Fee Related JP6338386B2 (ja) 2014-01-31 2014-01-31 リソグラフィ装置、及び物品の製造方法

Country Status (2)

Country Link
US (1) US9547242B2 (https=)
JP (1) JP6338386B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10114297B2 (en) * 2016-07-22 2018-10-30 Applied Materials, Inc. Active eye-to-eye with alignment by X-Y capacitance measurement
CN110244520B (zh) * 2019-05-22 2020-09-15 上海交通大学 用电子束光刻实现加工硅纳米圆柱的方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2606285B2 (ja) * 1988-06-07 1997-04-30 株式会社ニコン 露光装置および位置合わせ方法
JP2893823B2 (ja) * 1990-03-20 1999-05-24 株式会社ニコン 位置合わせ方法及び装置
KR100381629B1 (ko) * 1994-08-16 2003-08-21 가부시키가이샤 니콘 노광장치
US6798516B1 (en) 1996-11-14 2004-09-28 Nikon Corporation Projection exposure apparatus having compact substrate stage
US6160628A (en) * 1999-06-29 2000-12-12 Nikon Corporation Interferometer system and method for lens column alignment
JP2001168018A (ja) * 1999-12-13 2001-06-22 Canon Inc 荷電粒子線露光装置、荷電粒子線露光方法及び露光補正データの決定方法、該方法を適用したデバイスの製造方法。
JP2001308003A (ja) 2000-02-15 2001-11-02 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
US6674512B2 (en) * 2001-08-07 2004-01-06 Nikon Corporation Interferometer system for a semiconductor exposure system
JP3890233B2 (ja) * 2002-01-07 2007-03-07 キヤノン株式会社 位置決めステージ装置、露光装置及び半導体デバイスの製造方法
US20050151947A1 (en) 2002-07-31 2005-07-14 Nikon Corporation Position measuring method, position control method, exposure method and exposure apparatus, and device manufacturing method
JP4078485B2 (ja) 2002-10-31 2008-04-23 株式会社ニコン 露光装置、ステージ装置、及びステージ装置の制御方法
JP2004165076A (ja) * 2002-11-15 2004-06-10 Advantest Corp 偏向器の製造方法、偏向器、及び露光装置
US7075619B2 (en) * 2002-12-12 2006-07-11 Zygo Corporation In-process correction of stage mirror deformations during a photolithography exposure cycle
JP4164414B2 (ja) * 2003-06-19 2008-10-15 キヤノン株式会社 ステージ装置
US7864293B2 (en) * 2005-01-25 2011-01-04 Nikon Corporation Exposure apparatus, exposure method, and producing method of microdevice
JP4868113B2 (ja) * 2005-06-27 2012-02-01 株式会社ニコン 支持装置、ステージ装置及び露光装置
KR20080032213A (ko) * 2005-07-29 2008-04-14 후지필름 가부시키가이샤 묘화 방법 및 장치
US7336369B2 (en) * 2005-09-30 2008-02-26 Applied Materials, Inc. Multi-axis interferometer system using independent, single axis interferometers
US7876452B2 (en) * 2007-03-05 2011-01-25 Nikon Corporation Interferometric position-measuring devices and methods

Also Published As

Publication number Publication date
US9547242B2 (en) 2017-01-17
JP2015146342A (ja) 2015-08-13
US20150219447A1 (en) 2015-08-06

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