JP6338386B2 - リソグラフィ装置、及び物品の製造方法 - Google Patents
リソグラフィ装置、及び物品の製造方法 Download PDFInfo
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- JP6338386B2 JP6338386B2 JP2014017744A JP2014017744A JP6338386B2 JP 6338386 B2 JP6338386 B2 JP 6338386B2 JP 2014017744 A JP2014017744 A JP 2014017744A JP 2014017744 A JP2014017744 A JP 2014017744A JP 6338386 B2 JP6338386 B2 JP 6338386B2
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- Prior art keywords
- axis
- measurement
- optical
- substrate
- lithographic apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02015—Interferometers characterised by the beam path configuration
- G01B9/02027—Two or more interferometric channels or interferometers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Instruments For Measurement Of Length By Optical Means (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Electron Beam Exposure (AREA)
Description
Claims (8)
- パターンを基板に形成するリソグラフィ装置であって、
前記パターンを形成するためのビームを前記基板に照射する複数の光学系を含み、前記複数の光学系のうちの光学系の光軸に直交する第1方向及び第2方向のうち少なくとも一方に沿って前記複数の光学系が配列されてなる光学ユニットと、
前記光軸に平行な軸のまわりの前記光学ユニットの回転角を計測するための一対の計測部と、を有し、
前記一対の計測部のうちのそれぞれは、その計測軸上における前記光学ユニットの位置を計測し、
前記一対の計測部の計測軸の間の距離は、前記複数の光学系のうち前記第1方向において最も離れた2つの光学系の光軸の間の距離及び前記複数の光学系のうち前記第2方向において最も離れた2つの光学系の光軸の間の距離のうち長い方の距離以上であることを特徴とするリソグラフィ装置。 - 前記基板を保持して前記第1方向及び前記第2方向に移動するステージを有し、
前記一対の計測部の計測軸は、前記第1方向及び前記第2方向のうち前記ステージの可動量の大きい方の方向に沿っていることを特徴とする請求項1に記載のリソグラフィ装置。 - 前記光軸に平行な軸のまわりの前記ステージの回転角を計測するための第2の一対の計測部を有し、
前記第2の一対の計測部のうちのそれぞれは、その計測軸上における前記ステージの位置を計測し、
前記第2の一対の計測部の計測軸の間の距離は、前記長い方の距離以上であることを特徴とする請求項2に記載のリソグラフィ装置。 - 前記第2の一対の計測部の計測軸は、前記大きい方の方向に沿っていることを特徴とする請求項3に記載のリソグラフィ装置。
- 前記ビームは、荷電粒子線を含むことを特徴とする請求項1乃至4のうちいずれか1項に記載のリソグラフィ装置。
- 前記一対の計測部のうちのそれぞれは、干渉計を含むことを特徴とする請求項1乃至5のうちいずれか1項に記載のリソグラフィ装置。
- 前記ビームは、潜像パターンを形成するためのビームであることを特徴とする請求項1乃至6のうちいずれか1項に記載のリソグラフィ装置。
- 請求項1乃至7のうちいずれか1項に記載のリソグラフィ装置を用いてパターンを基板に形成し、
前記パターンを形成された前記基板の処理を行い、
前記処理を行われた前記基板から物品を製造する、
ことを特徴とする物品の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014017744A JP6338386B2 (ja) | 2014-01-31 | 2014-01-31 | リソグラフィ装置、及び物品の製造方法 |
US14/590,379 US9547242B2 (en) | 2014-01-31 | 2015-01-06 | Lithography apparatus, and method of manufacturing article |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014017744A JP6338386B2 (ja) | 2014-01-31 | 2014-01-31 | リソグラフィ装置、及び物品の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015146342A JP2015146342A (ja) | 2015-08-13 |
JP2015146342A5 JP2015146342A5 (ja) | 2017-03-02 |
JP6338386B2 true JP6338386B2 (ja) | 2018-06-06 |
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Application Number | Title | Priority Date | Filing Date |
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JP2014017744A Expired - Fee Related JP6338386B2 (ja) | 2014-01-31 | 2014-01-31 | リソグラフィ装置、及び物品の製造方法 |
Country Status (2)
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US (1) | US9547242B2 (ja) |
JP (1) | JP6338386B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10114297B2 (en) * | 2016-07-22 | 2018-10-30 | Applied Materials, Inc. | Active eye-to-eye with alignment by X-Y capacitance measurement |
CN110244520B (zh) * | 2019-05-22 | 2020-09-15 | 上海交通大学 | 用电子束光刻实现加工硅纳米圆柱的方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2606285B2 (ja) * | 1988-06-07 | 1997-04-30 | 株式会社ニコン | 露光装置および位置合わせ方法 |
JP2893823B2 (ja) * | 1990-03-20 | 1999-05-24 | 株式会社ニコン | 位置合わせ方法及び装置 |
US5617211A (en) * | 1994-08-16 | 1997-04-01 | Nikon Corporation | Exposure apparatus |
US6798516B1 (en) | 1996-11-14 | 2004-09-28 | Nikon Corporation | Projection exposure apparatus having compact substrate stage |
US6160628A (en) * | 1999-06-29 | 2000-12-12 | Nikon Corporation | Interferometer system and method for lens column alignment |
JP2001168018A (ja) * | 1999-12-13 | 2001-06-22 | Canon Inc | 荷電粒子線露光装置、荷電粒子線露光方法及び露光補正データの決定方法、該方法を適用したデバイスの製造方法。 |
JP2001308003A (ja) | 2000-02-15 | 2001-11-02 | Nikon Corp | 露光方法及び装置、並びにデバイス製造方法 |
US6674512B2 (en) * | 2001-08-07 | 2004-01-06 | Nikon Corporation | Interferometer system for a semiconductor exposure system |
JP3890233B2 (ja) * | 2002-01-07 | 2007-03-07 | キヤノン株式会社 | 位置決めステージ装置、露光装置及び半導体デバイスの製造方法 |
US20050151947A1 (en) | 2002-07-31 | 2005-07-14 | Nikon Corporation | Position measuring method, position control method, exposure method and exposure apparatus, and device manufacturing method |
JP4078485B2 (ja) | 2002-10-31 | 2008-04-23 | 株式会社ニコン | 露光装置、ステージ装置、及びステージ装置の制御方法 |
JP2004165076A (ja) * | 2002-11-15 | 2004-06-10 | Advantest Corp | 偏向器の製造方法、偏向器、及び露光装置 |
AU2003297000A1 (en) * | 2002-12-12 | 2004-06-30 | Zygo Corporation | In-process correction of stage mirror deformations during a photolithography exposure cycle |
JP4164414B2 (ja) * | 2003-06-19 | 2008-10-15 | キヤノン株式会社 | ステージ装置 |
KR101240130B1 (ko) * | 2005-01-25 | 2013-03-07 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법, 및 마이크로 디바이스 제조 방법 |
JP4868113B2 (ja) * | 2005-06-27 | 2012-02-01 | 株式会社ニコン | 支持装置、ステージ装置及び露光装置 |
WO2007013612A1 (ja) * | 2005-07-29 | 2007-02-01 | Fujifilm Corporation | 描画方法および装置 |
US7336369B2 (en) * | 2005-09-30 | 2008-02-26 | Applied Materials, Inc. | Multi-axis interferometer system using independent, single axis interferometers |
US7876452B2 (en) * | 2007-03-05 | 2011-01-25 | Nikon Corporation | Interferometric position-measuring devices and methods |
-
2014
- 2014-01-31 JP JP2014017744A patent/JP6338386B2/ja not_active Expired - Fee Related
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2015
- 2015-01-06 US US14/590,379 patent/US9547242B2/en active Active
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Publication number | Publication date |
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US9547242B2 (en) | 2017-01-17 |
US20150219447A1 (en) | 2015-08-06 |
JP2015146342A (ja) | 2015-08-13 |
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