JP6336865B2 - 物理量センサ - Google Patents
物理量センサ Download PDFInfo
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- JP6336865B2 JP6336865B2 JP2014182853A JP2014182853A JP6336865B2 JP 6336865 B2 JP6336865 B2 JP 6336865B2 JP 2014182853 A JP2014182853 A JP 2014182853A JP 2014182853 A JP2014182853 A JP 2014182853A JP 6336865 B2 JP6336865 B2 JP 6336865B2
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- 239000000758 substrate Substances 0.000 claims description 115
- 239000000463 material Substances 0.000 claims description 11
- 239000002210 silicon-based material Substances 0.000 claims description 7
- 208000008918 voyeurism Diseases 0.000 claims description 5
- 239000010408 film Substances 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- 230000001133 acceleration Effects 0.000 description 17
- 238000000034 method Methods 0.000 description 13
- 238000001514 detection method Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000005496 eutectics Effects 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 244000126211 Hericium coralloides Species 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 244000144985 peep Species 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0064—Packages or encapsulation for protecting against electromagnetic or electrostatic interferences
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0035—Testing
- B81C99/0045—End test of the packaged device
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
- G01C19/5733—Structural details or topology
- G01C19/574—Structural details or topology the devices having two sensing masses in anti-phase motion
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P21/00—Testing or calibrating of apparatus or devices covered by the preceding groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0242—Gyroscopes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/045—Optical switches
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0136—Comb structures
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
- Gyroscopes (AREA)
Description
図1を用いて本発明による物理量センサの第一実施例に係る構造を説明する。図1は本発明の一例を示す物理量センサの外観図を示す。本実施例では加速度センサの例を示している。基板は固定基板1と電極基板2の2層構造で構成されている。電極基板2の表面には、複数の貫通孔表面電極3が配置され、その周囲は空間4によって絶縁されており、電極基板表面にシールド層7が形成されている。シールド層7はアース電極5とつながっている。シールド層7の一部に内部観察用の空間6が形成されている。物理量センサは制御LSIに形成された電極パッドと金ワイヤによって電気的につながれる。なお、固定基板1にはSOI(Silicon on Insulator)ウエハを適用しており、電極基板2にはガラス基板を適用している。
図3を用いて本発明による物理量センサの第二実施例に係る構造を説明する。なお、第一と重複する説明については省略する。図3は本発明の別の一例を示す物理量センサの正面図を示す。図3は2軸の加速度センサが一つの基板に形成されている。すなわち、正面図に対して平行な方向と垂直な方向であり、X軸とY軸の2方向の加速度を検知することができる。
図5を用いて本発明による物理量センサの第三実施例に係る構造を説明する。なお、第一、第二実施例と重複する説明については省略する。図5は本発明の他の一例を示す物理量センサの外観図を示す。本実施例では角速度センサの例を示している。基板は固定基板1、デバイス基板15、電極基板2の少なくとも3層構造で構成されている。すなわち、第1の基板である固定基板1と第2の基板であるデバイス基板13と第3の基板である電極基板2とが、固定基板1と電極基板2とでデバイス基板13を挟むようにして積層されている。電極基板2の表面には、複数の貫通孔表面電極3が配置され、電極パッド12まで配線16によって電気的につながっている。その周囲は空間4によって絶縁されており、電極基板表面にシールド層7が形成されている。シールド層7はアース電極5とつながっている。シールド層7の一部に複数の内部観察用の空間6が形成されている。なお、固定基板1、デバイス基板13、電極基板2にはシリコン材料を適用している。
図9を用いて本発明による物理量センサの第四実施例に係る構造を説明する。図9は本発明の他の一例を示す物理量センサの外観図を示す。基板は固定基板1、デバイス基板15、電極基板2の少なくとも3層構造で構成されている。本実施例ではデバイス基板15に加速度センサおよび角速度センサが個別の部屋を有して一体で形成されている。
Claims (6)
- 第一の基板と第二の基板とを積層する積層構造を有し、
前記第一の基板の表面に形成される電極パッド及び配線を有し、
前記第二の基板に形成されるセンシング部を有する物理量センサにおいて、
前記第一の基板の表面に形成され、前記電極パッド及び前記配線に対して電気的に絶縁され、かつ、一定電位に保持された導電膜を有し、
前記導電膜は、前記センシング部を観察可能とするのぞき部を有していることを特徴とする物理量センサ。 - 前記センシング部は可動櫛歯と固定櫛歯を有し、
前記導電膜は、前記固定櫛歯と前記可動櫛歯とを積層方向に前記導電膜に対して投影した領域に前記のぞき部を有することを特徴とする請求項1に記載の物理量センサ。 - 前記のぞき部は、前記導電膜の厚さが他の部分に比べて薄い薄肉部或いは前記導電膜を設けていない部分であることを特徴とする請求項1又は2に記載の物理量センサ。
- 基板材料は全てシリコン材料から構成されたことを特徴とする請求項3に記載の物理量センサ。
- 前記第一の基板及び前記のぞき部は赤外線を透過することを特徴とする請求項3に記載の物理量センサ。
- 前記のぞき部は多角形であることを特徴とする請求項3に記載の物理量センサ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014182853A JP6336865B2 (ja) | 2014-09-09 | 2014-09-09 | 物理量センサ |
PCT/JP2015/068606 WO2016038984A1 (ja) | 2014-09-09 | 2015-06-29 | 物理量センサ |
US15/502,554 US9890037B2 (en) | 2014-09-09 | 2015-06-29 | Physical quantity sensor |
EP15840211.5A EP3193176B1 (en) | 2014-09-09 | 2015-06-29 | Physical quantity sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014182853A JP6336865B2 (ja) | 2014-09-09 | 2014-09-09 | 物理量センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016057136A JP2016057136A (ja) | 2016-04-21 |
JP6336865B2 true JP6336865B2 (ja) | 2018-06-06 |
Family
ID=55458746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014182853A Expired - Fee Related JP6336865B2 (ja) | 2014-09-09 | 2014-09-09 | 物理量センサ |
Country Status (4)
Country | Link |
---|---|
US (1) | US9890037B2 (ja) |
EP (1) | EP3193176B1 (ja) |
JP (1) | JP6336865B2 (ja) |
WO (1) | WO2016038984A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6401728B2 (ja) * | 2016-03-18 | 2018-10-10 | 株式会社日立製作所 | 慣性センサおよびその製造方法 |
JP6816603B2 (ja) | 2017-03-27 | 2021-01-20 | セイコーエプソン株式会社 | 物理量センサー、電子機器、および移動体 |
CN108726470B (zh) * | 2017-04-21 | 2020-02-21 | 华为技术有限公司 | Mems芯片及其电封装方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0615986B2 (ja) * | 1986-10-02 | 1994-03-02 | 日本電装株式会社 | 半導体式加速度センサの製造方法 |
JP3876615B2 (ja) * | 2000-11-27 | 2007-02-07 | 松下電工株式会社 | 半導体加速度センサ |
JP4081976B2 (ja) * | 2000-11-27 | 2008-04-30 | 松下電工株式会社 | 半導体加速度センサの検査方法 |
US6847907B1 (en) * | 2002-12-31 | 2005-01-25 | Active Optical Networks, Inc. | Defect detection and repair of micro-electro-mechanical systems (MEMS) devices |
JP5078245B2 (ja) | 2005-09-13 | 2012-11-21 | セイコーインスツル株式会社 | 力学量センサ |
US7516659B2 (en) * | 2006-05-11 | 2009-04-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Inertial force sensor |
WO2009087858A1 (ja) * | 2008-01-07 | 2009-07-16 | Murata Manufacturing Co., Ltd. | 角速度センサ |
JP2010190703A (ja) * | 2009-02-18 | 2010-09-02 | Panasonic Electric Works Co Ltd | 半導体物理量センサ |
US8921144B2 (en) * | 2010-06-25 | 2014-12-30 | International Business Machines Corporation | Planar cavity MEMS and related structures, methods of manufacture and design structures |
JP2012186285A (ja) | 2011-03-04 | 2012-09-27 | Fujikura Ltd | 貫通孔基板、貫通配線基板、電子部品、基板の製造方法、及び貫通孔の検査方法 |
FI20116082L (fi) * | 2011-11-03 | 2013-05-04 | Marko Pudas | Anturi |
US9352956B2 (en) * | 2014-01-16 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS devices and methods for forming same |
US9567204B2 (en) * | 2014-08-29 | 2017-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Microelectrochemical systems (MEMS) device having a seal layer arranged over or lining a hole in fluid communication with a cavity of the MEMS device |
-
2014
- 2014-09-09 JP JP2014182853A patent/JP6336865B2/ja not_active Expired - Fee Related
-
2015
- 2015-06-29 WO PCT/JP2015/068606 patent/WO2016038984A1/ja active Application Filing
- 2015-06-29 US US15/502,554 patent/US9890037B2/en active Active
- 2015-06-29 EP EP15840211.5A patent/EP3193176B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2016057136A (ja) | 2016-04-21 |
EP3193176A1 (en) | 2017-07-19 |
EP3193176B1 (en) | 2020-04-08 |
US9890037B2 (en) | 2018-02-13 |
EP3193176A4 (en) | 2018-05-16 |
WO2016038984A1 (ja) | 2016-03-17 |
US20170233246A1 (en) | 2017-08-17 |
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