JP6336765B2 - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
JP6336765B2
JP6336765B2 JP2014017731A JP2014017731A JP6336765B2 JP 6336765 B2 JP6336765 B2 JP 6336765B2 JP 2014017731 A JP2014017731 A JP 2014017731A JP 2014017731 A JP2014017731 A JP 2014017731A JP 6336765 B2 JP6336765 B2 JP 6336765B2
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JP
Japan
Prior art keywords
electrode
film
display device
contact hole
interlayer
Prior art date
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Active
Application number
JP2014017731A
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English (en)
Japanese (ja)
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JP2015145908A5 (enExample
JP2015145908A (ja
Inventor
康克 觀田
康克 觀田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Priority to JP2014017731A priority Critical patent/JP6336765B2/ja
Priority to US14/606,188 priority patent/US9837449B2/en
Publication of JP2015145908A publication Critical patent/JP2015145908A/ja
Publication of JP2015145908A5 publication Critical patent/JP2015145908A5/ja
Application granted granted Critical
Publication of JP6336765B2 publication Critical patent/JP6336765B2/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2014017731A 2014-01-31 2014-01-31 表示装置 Active JP6336765B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014017731A JP6336765B2 (ja) 2014-01-31 2014-01-31 表示装置
US14/606,188 US9837449B2 (en) 2014-01-31 2015-01-27 Display device with contact between an electrode of a thin film transistor and a pixel electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014017731A JP6336765B2 (ja) 2014-01-31 2014-01-31 表示装置

Publications (3)

Publication Number Publication Date
JP2015145908A JP2015145908A (ja) 2015-08-13
JP2015145908A5 JP2015145908A5 (enExample) 2017-02-02
JP6336765B2 true JP6336765B2 (ja) 2018-06-06

Family

ID=53755521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014017731A Active JP6336765B2 (ja) 2014-01-31 2014-01-31 表示装置

Country Status (2)

Country Link
US (1) US9837449B2 (enExample)
JP (1) JP6336765B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6483411B2 (ja) 2014-11-19 2019-03-13 株式会社ジャパンディスプレイ 表示装置
JP6457879B2 (ja) 2015-04-22 2019-01-23 株式会社ジャパンディスプレイ 表示装置及びその製造方法
KR102575531B1 (ko) * 2017-01-31 2023-09-06 삼성디스플레이 주식회사 표시 패널 및 이를 포함하는 표시 장치
CN110112204B (zh) * 2019-06-05 2022-07-29 京东方科技集团股份有限公司 一种阵列基板、显示面板和显示装置
CN112711157B (zh) * 2021-01-05 2023-11-28 武汉华星光电技术有限公司 一种阵列基板、阵列基板制程方法及显示面板

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3216124B2 (ja) 1998-12-10 2001-10-09 日本電気株式会社 半導体薄膜装置とその製造方法
JP4487318B2 (ja) * 2007-07-26 2010-06-23 エプソンイメージングデバイス株式会社 液晶表示装置及びその製造方法
JP4618336B2 (ja) * 2008-06-16 2011-01-26 ソニー株式会社 液晶表示装置
JP5417383B2 (ja) 2011-06-13 2014-02-12 株式会社ジャパンディスプレイ 液晶表示装置及びその製造方法
KR101971594B1 (ko) * 2012-02-16 2019-04-24 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법

Also Published As

Publication number Publication date
US20150221732A1 (en) 2015-08-06
US9837449B2 (en) 2017-12-05
JP2015145908A (ja) 2015-08-13

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