JP6334296B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP6334296B2
JP6334296B2 JP2014138229A JP2014138229A JP6334296B2 JP 6334296 B2 JP6334296 B2 JP 6334296B2 JP 2014138229 A JP2014138229 A JP 2014138229A JP 2014138229 A JP2014138229 A JP 2014138229A JP 6334296 B2 JP6334296 B2 JP 6334296B2
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gas
flow rate
etching
period
processing method
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JP2016018794A5 (enExample
JP2016018794A (ja
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豊 高妻
豊 高妻
基裕 田中
基裕 田中
角屋　誠浩
誠浩 角屋
北田　裕穂
裕穂 北田
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Hitachi High Tech Corp
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JP2014138229A 2014-07-04 2014-07-04 プラズマ処理方法 Active JP6334296B2 (ja)

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JP2014138229A JP6334296B2 (ja) 2014-07-04 2014-07-04 プラズマ処理方法

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JP2016018794A JP2016018794A (ja) 2016-02-01
JP2016018794A5 JP2016018794A5 (enExample) 2017-02-16
JP6334296B2 true JP6334296B2 (ja) 2018-05-30

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10734238B2 (en) * 2017-11-21 2020-08-04 Lam Research Corporation Atomic layer deposition and etch in a single plasma chamber for critical dimension control
JP7220603B2 (ja) * 2019-03-20 2023-02-10 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19706682C2 (de) * 1997-02-20 1999-01-14 Bosch Gmbh Robert Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium
JP2001168086A (ja) * 1999-12-09 2001-06-22 Kawasaki Steel Corp 半導体装置の製造方法および製造装置
JP2003151960A (ja) * 2001-11-12 2003-05-23 Toyota Motor Corp トレンチエッチング方法
US20070202700A1 (en) * 2006-02-27 2007-08-30 Applied Materials, Inc. Etch methods to form anisotropic features for high aspect ratio applications

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