JP6333894B2 - 配線基板、配線基板の製造方法、電子部品、および電子部品の製造方法 - Google Patents
配線基板、配線基板の製造方法、電子部品、および電子部品の製造方法 Download PDFInfo
- Publication number
- JP6333894B2 JP6333894B2 JP2016136037A JP2016136037A JP6333894B2 JP 6333894 B2 JP6333894 B2 JP 6333894B2 JP 2016136037 A JP2016136037 A JP 2016136037A JP 2016136037 A JP2016136037 A JP 2016136037A JP 6333894 B2 JP6333894 B2 JP 6333894B2
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- chip
- wiring board
- bonding
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 44
- 239000004020 conductor Substances 0.000 claims description 166
- 229920005989 resin Polymers 0.000 claims description 36
- 239000011347 resin Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 239000000853 adhesive Substances 0.000 claims description 14
- 230000001070 adhesive effect Effects 0.000 claims description 14
- 239000003566 sealing material Substances 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 11
- 239000011241 protective layer Substances 0.000 claims 1
- 230000001681 protective effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016136037A JP6333894B2 (ja) | 2016-07-08 | 2016-07-08 | 配線基板、配線基板の製造方法、電子部品、および電子部品の製造方法 |
CN201780042267.9A CN109478536A (zh) | 2016-07-08 | 2017-04-04 | 布线基板、布线基板的制造方法、电子零件以及电子零件的制造方法 |
KR1020187036756A KR102254999B1 (ko) | 2016-07-08 | 2017-04-04 | 배선 기판, 배선 기판의 제조 방법, 전자 부품, 및 전자 부품의 제조 방법 |
PCT/JP2017/014101 WO2018008214A1 (ja) | 2016-07-08 | 2017-04-04 | 配線基板、配線基板の製造方法、電子部品、および電子部品の製造方法 |
MYPI2019000001A MY192589A (en) | 2016-07-08 | 2017-04-04 | Wiring substrate, method for manufacturing wiring substrate, electronic component, and method for manufacturing electronic component |
TW106111861A TWI650051B (zh) | 2016-07-08 | 2017-04-10 | 配線基板、配線基板之製造方法、電子元件以及電子元件之製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016136037A JP6333894B2 (ja) | 2016-07-08 | 2016-07-08 | 配線基板、配線基板の製造方法、電子部品、および電子部品の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018006702A JP2018006702A (ja) | 2018-01-11 |
JP6333894B2 true JP6333894B2 (ja) | 2018-05-30 |
Family
ID=60912065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016136037A Active JP6333894B2 (ja) | 2016-07-08 | 2016-07-08 | 配線基板、配線基板の製造方法、電子部品、および電子部品の製造方法 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP6333894B2 (zh) |
KR (1) | KR102254999B1 (zh) |
CN (1) | CN109478536A (zh) |
MY (1) | MY192589A (zh) |
TW (1) | TWI650051B (zh) |
WO (1) | WO2018008214A1 (zh) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003303859A (ja) * | 2002-04-10 | 2003-10-24 | Hitachi Cable Ltd | 半導体装置用テープキャリアおよびその製造方法 |
US7164192B2 (en) * | 2003-02-10 | 2007-01-16 | Skyworks Solutions, Inc. | Semiconductor die package with reduced inductance and reduced die attach flow out |
JP2005116909A (ja) * | 2003-10-10 | 2005-04-28 | Hitachi Cable Ltd | 電子装置及び電子装置に用いる配線板 |
JP2011029518A (ja) * | 2009-07-28 | 2011-02-10 | Shindo Denshi Kogyo Kk | フレキシブルプリント配線板、半導体装置及びその製造方法 |
JP5848976B2 (ja) * | 2012-01-25 | 2016-01-27 | 新光電気工業株式会社 | 配線基板、発光装置及び配線基板の製造方法 |
-
2016
- 2016-07-08 JP JP2016136037A patent/JP6333894B2/ja active Active
-
2017
- 2017-04-04 WO PCT/JP2017/014101 patent/WO2018008214A1/ja active Application Filing
- 2017-04-04 MY MYPI2019000001A patent/MY192589A/en unknown
- 2017-04-04 KR KR1020187036756A patent/KR102254999B1/ko active IP Right Grant
- 2017-04-04 CN CN201780042267.9A patent/CN109478536A/zh active Pending
- 2017-04-10 TW TW106111861A patent/TWI650051B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2018008214A1 (ja) | 2018-01-11 |
KR102254999B1 (ko) | 2021-05-24 |
CN109478536A (zh) | 2019-03-15 |
JP2018006702A (ja) | 2018-01-11 |
MY192589A (en) | 2022-08-29 |
TWI650051B (zh) | 2019-02-01 |
TW201804881A (zh) | 2018-02-01 |
KR20190025835A (ko) | 2019-03-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5802695B2 (ja) | 半導体装置、半導体装置の製造方法 | |
KR101117848B1 (ko) | 반도체 장치 및 그 제조 방법 | |
CN107170716B (zh) | 半导体封装件及半导体封装件的制造方法 | |
US8853841B2 (en) | Lead frame which includes terminal portion having through groove covered by lid portion, semiconductor package, and manufacturing method of the same | |
JP5959386B2 (ja) | 樹脂封止型半導体装置およびその製造方法 | |
KR102227588B1 (ko) | 반도체 장치 및 그 제조 방법 | |
JP2005057067A (ja) | 半導体装置およびその製造方法 | |
JP7089388B2 (ja) | 半導体装置および半導体装置の製造方法 | |
US9184116B2 (en) | Method of manufacturing resin-encapsulated semiconductor device, and lead frame | |
JP2008130701A (ja) | 配線基板とそれを用いた半導体装置及び半導体装置の製造方法 | |
US9972560B2 (en) | Lead frame and semiconductor device | |
US11251110B2 (en) | Semiconductor device and method of manufacturing the semiconductor device | |
TW201539695A (zh) | 半導體裝置及其製造方法 | |
JP2019121698A (ja) | 半導体装置および半導体装置の製造方法 | |
JP6927634B2 (ja) | 半導体素子搭載用基板及びその製造方法 | |
JP2006165411A (ja) | 半導体装置およびその製造方法 | |
WO2015015850A1 (ja) | モジュールおよびその製造方法 | |
JP6333894B2 (ja) | 配線基板、配線基板の製造方法、電子部品、および電子部品の製造方法 | |
JP2956659B2 (ja) | 半導体装置およびそのリードフレーム | |
JP5104020B2 (ja) | モールドパッケージ | |
CN112992843B (zh) | 薄膜覆晶封装结构和其制作方法 | |
JP7145414B2 (ja) | リードフレームおよびその製造方法、ならびに半導体装置およびその製造方法 | |
JP6923299B2 (ja) | 半導体装置及び半導体装置の製造方法 | |
WO2015129185A1 (ja) | 樹脂封止型半導体装置、およびその製造方法、ならびにその実装体 | |
CN107978584B (zh) | 芯片封装结构及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171011 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180327 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180425 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6333894 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |