JP6324955B2 - ジェミニ添加剤を含む抗パターン崩壊処理用組成物 - Google Patents

ジェミニ添加剤を含む抗パターン崩壊処理用組成物 Download PDF

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JP6324955B2
JP6324955B2 JP2015521102A JP2015521102A JP6324955B2 JP 6324955 B2 JP6324955 B2 JP 6324955B2 JP 2015521102 A JP2015521102 A JP 2015521102A JP 2015521102 A JP2015521102 A JP 2015521102A JP 6324955 B2 JP6324955 B2 JP 6324955B2
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branched
linear
photoresist
alkyl
integer
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Japanese (ja)
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JP2015529840A (ja
JP2015529840A5 (https=
Inventor
クリップ，アンドレアス
ホンチウク，アンドライ
エター，ギュンター
ビットナー，クリスティアン
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BASF SE
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BASF SE
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/008—Polymeric surface-active agents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/40—Monoamines or polyamines; Salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2015521102A 2012-07-10 2013-07-01 ジェミニ添加剤を含む抗パターン崩壊処理用組成物 Active JP6324955B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261669686P 2012-07-10 2012-07-10
US61/669,686 2012-07-10
PCT/IB2013/055392 WO2014009847A1 (en) 2012-07-10 2013-07-01 Compositions for anti pattern collapse treatment comprising gemini additives

Publications (3)

Publication Number Publication Date
JP2015529840A JP2015529840A (ja) 2015-10-08
JP2015529840A5 JP2015529840A5 (https=) 2016-08-18
JP6324955B2 true JP6324955B2 (ja) 2018-05-16

Family

ID=49915473

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JP2015521102A Active JP6324955B2 (ja) 2012-07-10 2013-07-01 ジェミニ添加剤を含む抗パターン崩壊処理用組成物

Country Status (11)

Country Link
US (1) US10385295B2 (https=)
EP (2) EP2872948B1 (https=)
JP (1) JP6324955B2 (https=)
KR (1) KR102107367B1 (https=)
CN (1) CN104428716B (https=)
IL (1) IL236408B (https=)
MY (1) MY184912A (https=)
RU (1) RU2015104112A (https=)
SG (1) SG11201500098XA (https=)
TW (1) TWI611274B (https=)
WO (1) WO2014009847A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015168680A (ja) * 2014-03-11 2015-09-28 東ソー株式会社 ジェミニ型界面活性剤
JP6325464B2 (ja) * 2015-01-05 2018-05-16 信越化学工業株式会社 現像液及びこれを用いたパターン形成方法
JP2016139774A (ja) * 2015-01-23 2016-08-04 富士フイルム株式会社 パターン処理方法、半導体基板製品の製造方法およびパターン構造の前処理液
EP3717609B1 (en) * 2017-11-28 2023-10-18 Basf Se Composition comprising a primary and a secondary surfactant, for cleaning or rinsing a product
US10994544B2 (en) * 2018-05-08 2021-05-04 Nippon Kayaku Kabushiki Kaisha Cleaning liquid and method of cleaning ink-jet printer
WO2022008306A1 (en) * 2020-07-09 2022-01-13 Basf Se Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
JP7802644B2 (ja) * 2021-11-09 2026-01-20 信越化学工業株式会社 半導体基板パターン倒壊抑制用充填膜形成材料及び半導体基板の処理方法

Family Cites Families (20)

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JP4027494B2 (ja) * 1998-04-07 2007-12-26 花王株式会社 リンス剤組成物
US7129199B2 (en) 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
TW558736B (en) 2000-02-26 2003-10-21 Shipley Co Llc Method of reducing defects
KR20030012692A (ko) * 2001-08-03 2003-02-12 주식회사 엘지생활건강 계면활성제 시스템
US20050164903A1 (en) * 2001-08-03 2005-07-28 Ki-Hwan Ko Complexed surfactant system
US6641986B1 (en) 2002-08-12 2003-11-04 Air Products And Chemicals, Inc. Acetylenic diol surfactant solutions and methods of using same
WO2004088428A1 (ja) * 2003-03-28 2004-10-14 Tokyo Ohka Kogyo Co. Ltd. ホトレジスト組成物及びそれを用いたレジストパターン形成方法
US20040259371A1 (en) 2003-06-18 2004-12-23 Zhijian Lu Reduction of resist defects
EP1553454A2 (en) 2003-12-22 2005-07-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
KR100574349B1 (ko) * 2004-02-03 2006-04-27 삼성전자주식회사 세정액 조성물 및 이를 이용한 반도체 장치의 세정방법
US20080299487A1 (en) 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
CN101236357B (zh) * 2007-01-30 2012-07-04 住友化学株式会社 化学放大型抗蚀剂组合物
US20080280230A1 (en) 2007-05-10 2008-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography process including a chemical rinse
JP2009237169A (ja) * 2008-03-26 2009-10-15 Fujifilm Corp 平版印刷版の作製方法
JP2009237168A (ja) 2008-03-26 2009-10-15 Fujifilm Corp 平版印刷版の作製方法
CN101766973B (zh) * 2009-01-07 2012-06-13 湖北大学 一种对称型阳离子表面活性剂及其制备方法
JP5624753B2 (ja) 2009-03-31 2014-11-12 東京応化工業株式会社 リソグラフィー用洗浄液及びこれを用いたレジストパターンの形成方法
EP2668248B1 (en) 2011-01-25 2019-02-27 Basf Se Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm
RU2585322C2 (ru) 2011-03-18 2016-05-27 Басф Се Способ получения интегральных схем, оптических устройств, микромашин и механических высокоточных устройств, имеющих слои структурированного материала со строчным интервалом 50 нм и менее
RU2015128132A (ru) * 2012-12-14 2017-01-18 Басф Се Применение композиций, содержащих поверхностно-активное вещество и средство придания гидрофобности, для предохранения рельефа от разрушения при обработке рельефных материалов с линейными размерами, равными 50 нм или менее

Also Published As

Publication number Publication date
EP2872948A1 (en) 2015-05-20
JP2015529840A (ja) 2015-10-08
TWI611274B (zh) 2018-01-11
CN104428716A (zh) 2015-03-18
EP2872948B1 (en) 2017-10-11
EP3299891B1 (en) 2019-05-15
US10385295B2 (en) 2019-08-20
MY184912A (en) 2021-04-30
EP2872948A4 (en) 2016-11-02
CN104428716B (zh) 2019-06-14
TW201418910A (zh) 2014-05-16
KR20150036461A (ko) 2015-04-07
IL236408A0 (en) 2015-02-26
EP3299891A1 (en) 2018-03-28
SG11201500098XA (en) 2015-02-27
KR102107367B1 (ko) 2020-05-07
WO2014009847A1 (en) 2014-01-16
US20150159123A1 (en) 2015-06-11
RU2015104112A (ru) 2016-08-27
IL236408B (en) 2020-03-31

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