IL236408B - Compositions for anti pattern collapse treatment comprising gemini additives - Google Patents

Compositions for anti pattern collapse treatment comprising gemini additives

Info

Publication number
IL236408B
IL236408B IL236408A IL23640814A IL236408B IL 236408 B IL236408 B IL 236408B IL 236408 A IL236408 A IL 236408A IL 23640814 A IL23640814 A IL 23640814A IL 236408 B IL236408 B IL 236408B
Authority
IL
Israel
Prior art keywords
collapse
preparations
samples containing
treatment against
containing gemini
Prior art date
Application number
IL236408A
Other languages
English (en)
Hebrew (he)
Other versions
IL236408A0 (en
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of IL236408A0 publication Critical patent/IL236408A0/en
Publication of IL236408B publication Critical patent/IL236408B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/008—Polymeric surface-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/40—Monoamines or polyamines; Salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
IL236408A 2012-07-10 2014-12-23 Compositions for anti pattern collapse treatment comprising gemini additives IL236408B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261669686P 2012-07-10 2012-07-10
PCT/IB2013/055392 WO2014009847A1 (en) 2012-07-10 2013-07-01 Compositions for anti pattern collapse treatment comprising gemini additives

Publications (2)

Publication Number Publication Date
IL236408A0 IL236408A0 (en) 2015-02-26
IL236408B true IL236408B (en) 2020-03-31

Family

ID=49915473

Family Applications (1)

Application Number Title Priority Date Filing Date
IL236408A IL236408B (en) 2012-07-10 2014-12-23 Compositions for anti pattern collapse treatment comprising gemini additives

Country Status (11)

Country Link
US (1) US10385295B2 (https=)
EP (2) EP2872948B1 (https=)
JP (1) JP6324955B2 (https=)
KR (1) KR102107367B1 (https=)
CN (1) CN104428716B (https=)
IL (1) IL236408B (https=)
MY (1) MY184912A (https=)
RU (1) RU2015104112A (https=)
SG (1) SG11201500098XA (https=)
TW (1) TWI611274B (https=)
WO (1) WO2014009847A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015168680A (ja) * 2014-03-11 2015-09-28 東ソー株式会社 ジェミニ型界面活性剤
JP6325464B2 (ja) * 2015-01-05 2018-05-16 信越化学工業株式会社 現像液及びこれを用いたパターン形成方法
JP2016139774A (ja) * 2015-01-23 2016-08-04 富士フイルム株式会社 パターン処理方法、半導体基板製品の製造方法およびパターン構造の前処理液
EP3717609B1 (en) * 2017-11-28 2023-10-18 Basf Se Composition comprising a primary and a secondary surfactant, for cleaning or rinsing a product
US10994544B2 (en) * 2018-05-08 2021-05-04 Nippon Kayaku Kabushiki Kaisha Cleaning liquid and method of cleaning ink-jet printer
WO2022008306A1 (en) * 2020-07-09 2022-01-13 Basf Se Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
JP7802644B2 (ja) * 2021-11-09 2026-01-20 信越化学工業株式会社 半導体基板パターン倒壊抑制用充填膜形成材料及び半導体基板の処理方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4027494B2 (ja) * 1998-04-07 2007-12-26 花王株式会社 リンス剤組成物
US7129199B2 (en) 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
TW558736B (en) 2000-02-26 2003-10-21 Shipley Co Llc Method of reducing defects
KR20030012692A (ko) * 2001-08-03 2003-02-12 주식회사 엘지생활건강 계면활성제 시스템
US20050164903A1 (en) * 2001-08-03 2005-07-28 Ki-Hwan Ko Complexed surfactant system
US6641986B1 (en) 2002-08-12 2003-11-04 Air Products And Chemicals, Inc. Acetylenic diol surfactant solutions and methods of using same
WO2004088428A1 (ja) * 2003-03-28 2004-10-14 Tokyo Ohka Kogyo Co. Ltd. ホトレジスト組成物及びそれを用いたレジストパターン形成方法
US20040259371A1 (en) 2003-06-18 2004-12-23 Zhijian Lu Reduction of resist defects
EP1553454A2 (en) 2003-12-22 2005-07-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
KR100574349B1 (ko) * 2004-02-03 2006-04-27 삼성전자주식회사 세정액 조성물 및 이를 이용한 반도체 장치의 세정방법
US20080299487A1 (en) 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
CN101236357B (zh) * 2007-01-30 2012-07-04 住友化学株式会社 化学放大型抗蚀剂组合物
US20080280230A1 (en) 2007-05-10 2008-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography process including a chemical rinse
JP2009237169A (ja) * 2008-03-26 2009-10-15 Fujifilm Corp 平版印刷版の作製方法
JP2009237168A (ja) 2008-03-26 2009-10-15 Fujifilm Corp 平版印刷版の作製方法
CN101766973B (zh) * 2009-01-07 2012-06-13 湖北大学 一种对称型阳离子表面活性剂及其制备方法
JP5624753B2 (ja) 2009-03-31 2014-11-12 東京応化工業株式会社 リソグラフィー用洗浄液及びこれを用いたレジストパターンの形成方法
EP2668248B1 (en) 2011-01-25 2019-02-27 Basf Se Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm
RU2585322C2 (ru) 2011-03-18 2016-05-27 Басф Се Способ получения интегральных схем, оптических устройств, микромашин и механических высокоточных устройств, имеющих слои структурированного материала со строчным интервалом 50 нм и менее
RU2015128132A (ru) * 2012-12-14 2017-01-18 Басф Се Применение композиций, содержащих поверхностно-активное вещество и средство придания гидрофобности, для предохранения рельефа от разрушения при обработке рельефных материалов с линейными размерами, равными 50 нм или менее

Also Published As

Publication number Publication date
EP2872948A1 (en) 2015-05-20
JP2015529840A (ja) 2015-10-08
TWI611274B (zh) 2018-01-11
CN104428716A (zh) 2015-03-18
EP2872948B1 (en) 2017-10-11
EP3299891B1 (en) 2019-05-15
US10385295B2 (en) 2019-08-20
MY184912A (en) 2021-04-30
EP2872948A4 (en) 2016-11-02
CN104428716B (zh) 2019-06-14
TW201418910A (zh) 2014-05-16
KR20150036461A (ko) 2015-04-07
JP6324955B2 (ja) 2018-05-16
IL236408A0 (en) 2015-02-26
EP3299891A1 (en) 2018-03-28
SG11201500098XA (en) 2015-02-27
KR102107367B1 (ko) 2020-05-07
WO2014009847A1 (en) 2014-01-16
US20150159123A1 (en) 2015-06-11
RU2015104112A (ru) 2016-08-27

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