JP6319721B2 - 波長可変レーザの制御方法 - Google Patents

波長可変レーザの制御方法 Download PDF

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Publication number
JP6319721B2
JP6319721B2 JP2014016909A JP2014016909A JP6319721B2 JP 6319721 B2 JP6319721 B2 JP 6319721B2 JP 2014016909 A JP2014016909 A JP 2014016909A JP 2014016909 A JP2014016909 A JP 2014016909A JP 6319721 B2 JP6319721 B2 JP 6319721B2
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Japan
Prior art keywords
wavelength
etalon
value
temperature
control
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JP2014016909A
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Japanese (ja)
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JP2015144190A5 (enExample
JP2015144190A (ja
Inventor
充宜 宮田
充宜 宮田
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2014016909A priority Critical patent/JP6319721B2/ja
Priority to US14/610,823 priority patent/US20150222077A1/en
Publication of JP2015144190A publication Critical patent/JP2015144190A/ja
Publication of JP2015144190A5 publication Critical patent/JP2015144190A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1212—Chirped grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34373—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
JP2014016909A 2014-01-31 2014-01-31 波長可変レーザの制御方法 Active JP6319721B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014016909A JP6319721B2 (ja) 2014-01-31 2014-01-31 波長可変レーザの制御方法
US14/610,823 US20150222077A1 (en) 2014-01-31 2015-01-30 Method for controlling variable wavelength laser, and variable wavelength laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014016909A JP6319721B2 (ja) 2014-01-31 2014-01-31 波長可変レーザの制御方法

Publications (3)

Publication Number Publication Date
JP2015144190A JP2015144190A (ja) 2015-08-06
JP2015144190A5 JP2015144190A5 (enExample) 2017-03-09
JP6319721B2 true JP6319721B2 (ja) 2018-05-09

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US (1) US20150222077A1 (enExample)
JP (1) JP6319721B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015050284A (ja) * 2013-08-30 2015-03-16 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
JP6292499B2 (ja) * 2013-08-30 2018-03-14 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
WO2017029752A1 (ja) * 2015-08-20 2017-02-23 三菱電機株式会社 ビーム走査装置、光無線通信システムおよびビーム走査方法
WO2017212561A1 (ja) * 2016-06-08 2017-12-14 三菱電機株式会社 レーザ光源装置
JP6821901B2 (ja) 2016-07-11 2021-01-27 住友電工デバイス・イノベーション株式会社 波長可変レーザの駆動条件設定方法及び波長可変レーザシステム
JP7488053B2 (ja) * 2020-02-06 2024-05-21 古河電気工業株式会社 レーザ装置およびその制御方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04335588A (ja) * 1991-05-10 1992-11-24 Ando Electric Co Ltd 周波数安定化光源
US5960259A (en) * 1995-11-16 1999-09-28 Matsushita Electric Industrial Co., Ltd. Optical apparatus and method for producing the same
JP3964676B2 (ja) * 1999-07-01 2007-08-22 富士通株式会社 多波長対応の光送信装置および光送信波長制御方法
JP4071917B2 (ja) * 2000-04-21 2008-04-02 ユーディナデバイス株式会社 光半導体装置
JP3788232B2 (ja) * 2000-12-13 2006-06-21 日本電気株式会社 波長可変光送信器、その出力制御方法並及び光通信システム
JP2003060294A (ja) * 2001-06-07 2003-02-28 Furukawa Electric Co Ltd:The 光送信器、ｗｄｍ光送信装置及び光モジュール
US20030067949A1 (en) * 2001-06-07 2003-04-10 The Furukawa Electric Co., Ltd. Optical module, transmitter and WDM transmitting device
US20060039421A1 (en) * 2004-08-11 2006-02-23 Rong Huang Thermally Tunable Laser with Single Solid Etalon Wavelength Locker
JP4943255B2 (ja) * 2007-07-20 2012-05-30 住友電工デバイス・イノベーション株式会社 半導体レーザの制御方法
JP2009099862A (ja) * 2007-10-18 2009-05-07 Sumitomo Electric Ind Ltd 制御回路および温度制御方法
CN101971445B (zh) * 2008-02-05 2012-11-07 住友电工光电子器件创新株式会社 激光设备

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JP2015144190A (ja) 2015-08-06

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