JP6315419B2 - 半導体検査方法、半導体検査装置及び半導体製造方法 - Google Patents

半導体検査方法、半導体検査装置及び半導体製造方法 Download PDF

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Publication number
JP6315419B2
JP6315419B2 JP2013257450A JP2013257450A JP6315419B2 JP 6315419 B2 JP6315419 B2 JP 6315419B2 JP 2013257450 A JP2013257450 A JP 2013257450A JP 2013257450 A JP2013257450 A JP 2013257450A JP 6315419 B2 JP6315419 B2 JP 6315419B2
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Japan
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region
imaging
pixel
difference
images
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JP2013257450A
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Japanese (ja)
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JP2015115504A (ja
Inventor
光徳 沼田
光徳 沼田
明夫 石川
明夫 石川
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority to JP2013257450A priority Critical patent/JP6315419B2/ja
Priority to KR1020140057393A priority patent/KR102241989B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2013257450A 2013-12-12 2013-12-12 半導体検査方法、半導体検査装置及び半導体製造方法 Active JP6315419B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013257450A JP6315419B2 (ja) 2013-12-12 2013-12-12 半導体検査方法、半導体検査装置及び半導体製造方法
KR1020140057393A KR102241989B1 (ko) 2013-12-12 2014-05-13 반도체 검사 방법, 반도체 검사 장치 및 반도체 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013257450A JP6315419B2 (ja) 2013-12-12 2013-12-12 半導体検査方法、半導体検査装置及び半導体製造方法

Publications (2)

Publication Number Publication Date
JP2015115504A JP2015115504A (ja) 2015-06-22
JP6315419B2 true JP6315419B2 (ja) 2018-04-25

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ID=53516219

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JP2013257450A Active JP6315419B2 (ja) 2013-12-12 2013-12-12 半導体検査方法、半導体検査装置及び半導体製造方法

Country Status (2)

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JP (1) JP6315419B2 (ko)
KR (1) KR102241989B1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6846958B2 (ja) * 2017-03-09 2021-03-24 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
CN107689335B (zh) * 2017-09-26 2019-12-17 华润微电子（重庆）有限公司 一种多种产品晶圆缺陷的分析方法
JP7042118B2 (ja) 2018-03-08 2022-03-25 株式会社東芝 検査装置、検査方法、及びプログラム
CN113916903A (zh) * 2021-09-29 2022-01-11 芯盟科技有限公司 缺陷检测方法及系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09265537A (ja) * 1996-03-29 1997-10-07 Hitachi Ltd 画像処理方法
JP4175748B2 (ja) * 1999-09-20 2008-11-05 大日本スクリーン製造株式会社 パターン検査装置
JP5544344B2 (ja) * 2011-09-26 2014-07-09 株式会社日立ハイテクノロジーズ 欠陥観察方法及び欠陥観察装置
KR101297207B1 (ko) * 2011-11-04 2013-08-16 (주)오로스 테크놀로지 반도체용 웨이퍼 결함 검사방법
US9535009B2 (en) * 2012-05-16 2017-01-03 Hitachi High-Technologies Corporation Inspection system

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KR20150068884A (ko) 2015-06-22
KR102241989B1 (ko) 2021-04-20
JP2015115504A (ja) 2015-06-22

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