JP6310354B2 - Elastic wave device - Google Patents

Description

  The present invention relates to an acoustic wave device, for example, an acoustic wave device in which an acoustic wave chip flip-chip mounted on a package substrate is sealed by a sealing portion including solder.

  In order to reduce the size and height of an acoustic wave device, a technique for flip chip mounting an acoustic wave chip on a package substrate is known. In such an acoustic wave device, it is known to seal an acoustic wave chip with a sealing portion containing solder (see, for example, Patent Documents 1 to 3).

JP 2006-203149 A JP 2009-296508 A JP 2012-160847 A

  In an acoustic wave device in which an acoustic wave chip flip-chip mounted on a package substrate is sealed with a sealing portion including solder, characteristic deterioration of the acoustic wave chip may occur due to a decrease in hermeticity.

  This invention is made | formed in view of the said subject, and aims at providing the acoustic wave device which can suppress a fall of airtightness.

The present invention provides an electrode provided on a package substrate, in which a first lower metal layer, a first adhesion layer, and a first upper metal layer made of a metal different from the first lower metal layer are stacked in this order. A pad, an elastic wave chip bonded to the electrode pad and flip-chip mounted on the package substrate, a second lower metal layer provided on the package substrate so as to surround the elastic wave chip, and the first A metal pattern in which a second adhesion layer having a thickness larger than one adhesion layer and a second upper metal layer made of a metal different from the second lower metal layer are laminated in this order; and the second upper metal wherein and are bonded to the upper surface of the layer second upper metal layer, the second adhesive layer, and the comprises a solder which is not bonded to the side surface of the second lower metal layer, the sealing portion for sealing the elastic wave chip And a bullet characterized by comprising A wave device. Further, according to the present invention, a first lower metal layer, a first adhesion layer, and a first upper metal layer made of a metal different from the first lower metal layer are stacked in this order, provided on the package substrate. An electrode pad, an acoustic wave chip bonded to the electrode pad and flip-chip mounted on the package substrate, a second lower metal layer provided on the package substrate surrounding the acoustic wave chip, A metal pattern in which a second adhesion layer having a thickness greater than that of the first adhesion layer and a second upper metal layer made of a metal different from the second lower metal layer are laminated in this order; and the metal pattern Including a solder bonded to the upper surface of the first and second elastic layers, and the first lower metal layer and the second lower metal layer are made of the same material and the same film thickness, The first upper metal layer and the second upper metal layer The layer metal layer made of the same material and have the same thickness, wherein the first contact layer and the second contact layer is an elastic wave device which is characterized in that it consists of the same material.

  The said structure WHEREIN: The said acoustic wave chip | tip can be set as the structure joined to the said electrode pad by metal bumps other than solder.

  In the above configuration, the sealing portion is bonded to the upper surface of the metal pattern and surrounds the acoustic wave chip, and a flat metal lid extending from the acoustic wave chip onto the solder. It can be set as the structure which consists of these.

  In the above configuration, the second lower metal layer may be made of silver or tungsten, the second adhesion layer may be made of nickel or copper, and the second upper metal layer may be made of gold.

  According to the present invention, a decrease in airtightness can be suppressed.

FIG. 1A is a cross-sectional view illustrating the duplexer according to the first embodiment, and FIG. 1B is an enlarged cross-sectional view of a region A in FIG. FIG. 2 is a circuit diagram illustrating the duplexer according to the first embodiment. 3A and 3B are a top view and a bottom view of the package substrate. FIG. 4A to FIG. 4D are cross-sectional views (part 1) illustrating the method of manufacturing the duplexer according to the first embodiment. FIG. 5A to FIG. 5C are cross-sectional views (part 2) illustrating the method of manufacturing the duplexer according to the first embodiment. 6A to 6C are cross-sectional views (part 3) illustrating the method of manufacturing the duplexer according to the first embodiment. FIG. 7A is a cross-sectional view showing a duplexer according to Comparative Example 1, and FIG. 7B is an enlarged cross-sectional view of region A in FIG.

  Embodiments of the present invention will be described below with reference to the drawings.

  FIG. 1A is a cross-sectional view illustrating the duplexer according to the first embodiment, and FIG. 1B is an enlarged cross-sectional view of a region A in FIG. As shown in FIG. 1A, in the duplexer 100 according to the first embodiment, the transmission filter chip 12 and the reception filter chip 14 are flip-chip mounted on the flat upper surface of the package substrate 10. The transmission filter chip 12 and the reception filter chip 14 are flip-chip mounted on the package substrate 10 by bonding bumps 18 to electrode pads 16 provided on the upper surface of the package substrate 10. For the package substrate 10, for example, an insulator such as ceramic made of LTCC (Low Temperature Co-fired Ceramics) or HTCC (High Temperature Co-fired Ceramics) can be used. For the bump 18, for example, a metal bump such as a gold (Au) bump can be used.

  The transmission filter chip 12 and the reception filter chip 14 are composed of, for example, a surface acoustic wave (SAW) device chip. The piezoelectric substrate 20 and an IDT (provided on the surface of the piezoelectric substrate 20 facing the package substrate 10). Interdigital Transducer) 22. A transmission filter is formed by the IDT 22 in the transmission filter chip 12, and a reception filter is formed by the IDT 22 in the reception filter chip 14. For the piezoelectric substrate 20, for example, a piezoelectric material such as lithium tantalate (LT) or lithium niobate (LN) can be used. For the IDT 22, for example, a metal such as copper (Cu) or aluminum (Al) can be used.

  Here, the circuit configuration of the duplexer of the first embodiment will be described with reference to FIG. FIG. 2 is a circuit diagram illustrating the duplexer according to the first embodiment. As shown in FIG. 2, the transmission filter 70 formed on the transmission filter chip 12 is connected between the antenna terminal 62 connected to the antenna 60 and the transmission terminal 64. A reception filter 72 formed on the reception filter chip 14 is connected between the antenna terminal 62 and the reception terminal 66. The transmission filter 70 passes signals in the transmission band among signals input from the transmission terminal 64 to the antenna terminal 62 as transmission signals, and suppresses signals of other frequencies. The reception filter 72 passes signals in the reception band out of the signals input from the antenna terminal 62 as reception signals to the reception terminal 66 and suppresses signals of other frequencies. The frequency of the transmission band is different from the frequency of the reception band.

  As shown in FIG. 1A, a gap 24 is formed between the upper surface of the package substrate 10 and the transmission filter chip 12 and the reception filter chip 14. The IDT 22 is exposed in the gap 24 so that vibration is not suppressed. The bump 18 is also exposed in the gap 24.

  The package substrate 10 is a multilayer wiring board in which an internal wiring 26 is provided. By the internal wiring 26, the electrode pad 16 formed on the upper surface of the package substrate 10 and the foot pad 28 formed on the lower surface are electrically connected. Since the bump 18 is bonded to the electrode pad 16, the transmission filter chip 12 and the reception filter chip 14 are electrically connected to the foot pad 28. For example, a metal such as gold (Au) can be used for the internal wiring 26.

  A metal pattern 30 is provided on the upper surface of the package substrate 10 and outside the transmission filter chip 12 and the reception filter chip 14. The metal pattern 30 is provided so as to surround the transmission filter chip 12 and the reception filter chip 14. Solder 32 surrounding the transmission filter chip 12 and the reception filter chip 14 is provided on the upper surface of the metal pattern 30. For example, the solder 32 is bonded to the entire upper surface of the metal pattern 30. A flat metal lid 34 extending from the transmission filter chip 12 and the reception filter chip 14 onto the solder 32 is provided. The transmission filter chip 12 and the reception filter chip 14 are sealed by a sealing portion 36 including a solder 32 and a metal lid 34. For the metal lid 34, for example, a metal having a melting point higher than that of solder such as Kovar can be used. A protective film 38 made of a metal such as nickel (Ni) is provided so as to cover the sealing portion 36.

  As shown in FIG. 1B, each of the electrode pad 16 and the metal pattern 30 is a metal film having a three-layer structure, and includes a lower metal layer, an upper metal layer, and an adhesion layer disposed therebetween. Have. That is, the electrode pad 16 is provided with the first lower metal layer 40, the first adhesion layer 42, and the first upper metal layer 44 in this order from the package substrate 10 side. Since the first lower metal layer 40 and the first upper metal layer 44 are made of different metals, the first adhesion layer 42 is provided for the adhesion between the first lower metal layer 40 and the first upper metal layer 44. . The first lower metal layer 40 is made of, for example, a silver (Ag) layer having a thickness of about 15 μm, and the first adhesion layer 42 is made of, for example, a nickel (Ni) layer having a thickness of about 2 μm to 6 μm. 44 is made of, for example, a gold (Au) layer having a thickness of about 0.3 μm.

  The metal pattern 30 includes a second lower metal layer 50, a second adhesion layer 52, and a second upper metal layer 54 in this order from the package substrate 10 side. Since the second lower metal layer 50 and the second upper metal layer 54 are made of different metals, the second adhesion layer 52 is provided for adhesion between the second lower metal layer 50 and the second upper metal layer 54. . The film thickness of the second adhesion layer 52 is thicker than that of the first adhesion layer 42. The film thickness of the second adhesion layer 52 is preferably, for example, twice or more than the film thickness of the first adhesion layer 42, more preferably 3 times or more, and still more preferably 4 times or more. The second lower metal layer 50 is made of, for example, a silver (Ag) layer having a film thickness of about 15 μm, and the second adhesion layer 52 is made of, for example, a nickel (Ni) layer having a film thickness of about 10 μm to 15 μm. 54 is made of, for example, a gold (Au) layer having a thickness of about 0.3 μm.

  A barrier metal layer made of, for example, palladium (Pd) or the like is provided between the first adhesion layer 42 and the first upper metal layer 44 and between the second adhesion layer 52 and the second upper metal layer 54. May be. Although not shown, the foot pad 28 is also a metal film having a three-layer structure, and a third lower layer metal layer, a third adhesion layer, and a third upper layer metal layer are provided in this order from the package substrate 10 side. It has been. The third lower metal layer is made of, for example, a silver (Ag) layer, the third adhesion layer is made of, for example, a nickel (Ni) layer, and the third upper metal layer is made of, for example, a gold (Au) layer.

  3A and 3B are a top view and a bottom view of the package substrate. As shown in FIG. 3A, an electrode pad 16 (mesh pattern in the drawing) including an antenna pad, a transmission pad, a reception pad, and a ground pad is provided on the upper surface of the package substrate 10.

  The transmission filter chip 12 is flip-chip mounted on the upper surface of the package substrate 10 by bonding bumps 18 to the upper surfaces of the antenna pad, the transmission pad, and the ground pad. The input electrode formed on the transmission filter chip 12 is connected to the transmission pad, the output electrode is connected to the antenna pad, and the ground electrode is connected to the ground pad.

  The reception filter chip 14 is flip-chip mounted on the upper surface of the package substrate 10 by bonding bumps 18 to the upper surfaces of the antenna pad, the reception pad, and the ground pad. The input electrode formed on the reception filter chip 14 is connected to the antenna pad, the output electrode is connected to the reception pad, and the ground electrode is connected to the ground pad.

  The metal pattern 30 is provided along the edge of the upper surface of the rectangular package substrate 10 so as to surround the transmission filter chip 12 and the reception filter chip 14.

  As shown in FIG. 3B, an antenna foot pad 28a, a transmitting foot pad 28b, a receiving foot pad 28c, and a ground foot pad 28d are provided on the lower surface of the package substrate 10 as foot pads 28. Yes. The antenna foot pad 28a, the transmission foot pad 28b, and the reception foot pad 28c correspond to the antenna terminal 62, the transmission terminal 64, and the reception terminal 66 in FIG. The antenna foot pad 28a, the transmission foot pad 28b, the reception foot pad 28c, and the ground foot pad 28d are respectively connected to the antenna pad, the transmission pad, the reception pad, and the ground pad included in the electrode pad 16 via the internal wiring 26. It is electrically connected to the ground pad. Therefore, the transmission filter formed on the transmission filter chip 12 is connected between the antenna foot pad 28a and the transmission foot pad 28b, and the reception filter formed on the reception filter chip 14 is connected to the antenna foot pad 28a. It is connected between the receiving foot pad 28c.

  Further, the metal pattern 30 is connected to the ground foot pad 28 d through the internal wiring 26. Thereby, the sealing part 36 made of metal can be set to the ground potential, and the electrical characteristics can be improved.

  Next, a method for manufacturing the duplexer according to the first embodiment will be described. 4A to 6C are cross-sectional views illustrating a method of manufacturing the duplexer according to the first embodiment. FIGS. 4A to 6C show a manufacturing method using a multi-chamfer process. As shown in FIG. 4A, the first lower layer metal layer 40 included in the electrode pad 16 and the second lower layer metal included in the metal pattern 30 are formed on the upper surface of the wafer-like package substrate 10 on which the internal wiring 26 is formed. And a layer 50 is formed. The first lower metal layer 40 and the second lower metal layer 50 are formed by depositing, for example, a 15 μm-thick silver (Ag) film on the entire upper surface of the package substrate 10 and then using an exposure technique and an etching technique. be able to. Therefore, the first lower metal layer 40 and the second lower metal layer 50 are metal films having the same material and the same film thickness. Moreover, you may form the 1st lower layer metal layer 40 and the 2nd lower layer metal layer 50 using a vapor deposition method and the lift-off method. A third lower metal layer 80 included in the foot pad 28 is formed on the lower surface of the package substrate 10. The third lower metal layer 80 can be formed by the same method as the first lower metal layer 40 and the second lower metal layer 50.

  As shown in FIG. 4B, for example, a resist film 90 is formed on the entire lower surface of the package substrate 10. Thereby, the third lower metal layer 80 is covered with the resist film 90. Thereafter, an electrolytic plating film 92 made of, for example, a nickel (Ni) film having a thickness of about 10 μm is formed only on the second lower metal layer 50 by using an electrolytic plating method. Since the metal pattern 30 and the electrode pad 16 are electrically separated as shown in FIG. 3A, that is, the first lower metal layer 40 and the second lower metal layer 50 are electrically separated. Therefore, current can flow only through the second lower metal layer 50. Therefore, the electrolytic plating film 92 can be formed only on the second lower metal layer 50.

  As shown in FIG. 4C, the resist film 90 formed on the lower surface of the package substrate 10 is removed. Thereafter, using an electroless plating method, an electroless plating made of, for example, a nickel (Ni) film having a thickness of about 3 μm on the first lower metal layer 40, the electrolytic plating film 92, and the third lower metal layer 80. A film 94 is formed. As a result, the first adhesion layer 42 made of the electroless plating film 94 is formed on the first lower metal layer 40. On the second lower metal layer 50, a second adhesion layer 52 composed of an electrolytic plating film 92 and an electroless plating film 94 is formed. On the third lower metal layer 80, a third adhesion layer 82 made of the electroless plating film 94 is formed.

  As shown in FIGS. 4B and 4C, the thickness of the second adhesion layer 52 can be made thicker than that of the first adhesion layer 42 by combining the electrolytic plating method and the electroless plating method. it can. Note that the order of the electrolytic plating method and the electroless plating method may be interchanged. That is, first, without the resist film 90 on the lower surface of the package substrate 10, an electroless plating method is used to form a film on the first lower metal layer 40, the second lower metal layer 50, and the third lower metal layer 80. An electrolytic plating film is formed. Thereafter, a resist film 90 is formed on the lower surface of the package substrate 10, and an electrolytic plating film is formed only on the electroless plating film on the second lower metal layer 50 using an electrolytic plating method.

  As shown in FIG. 4D, on the first adhesion layer 42, the second adhesion layer 52, and the third adhesion layer 82, for example, gold (about 0.3 μm thick) using an electroless plating method. An electroless plating film 96 made of an Au) film is formed. Thereby, the first upper metal layer 44 made of the electroless plating film 96 is formed on the first adhesion layer 42. A second upper metal layer 54 made of an electroless plating film 96 is formed on the second adhesion layer 52. A third upper metal layer 84 made of the electroless plating film 96 is formed on the third adhesion layer 82. Therefore, the first upper metal layer 44, the second upper metal layer 54, and the third upper metal layer 84 are metal films having the same material and the same film thickness.

  4A to 4D, the electrode pad 16 in which the first lower metal layer 40, the first adhesion layer 42, and the first upper metal layer 44 are stacked on the upper surface of the package substrate 10; The metal pattern 30 in which the second lower metal layer 50, the second adhesion layer 52, and the second upper metal layer 54 are stacked is formed. On the lower surface of the package substrate 10, the foot pad 28 in which the third lower layer metal layer 80, the third adhesion layer 82, and the third upper layer metal layer 84 are stacked is formed.

  As shown in FIG. 5A, a plurality of transmission filter chips 12 and a plurality of reception filter chips 14 are flip-chip mounted on electrode pads 16 formed on the package substrate 10 using bumps 18. At this time, the transmission filter chip 12 and the reception filter chip 14 constituting one duplexer are flip-chip mounted so as to be surrounded by the metal pattern 30.

  As shown in FIG. 5B, a laminate of the solder 32 and the metal lid 34 is placed on the plurality of transmission filter chips 12 and the plurality of reception filter chips 14 so that the solder 32 is positioned on the acoustic wave filter chip side. Deploy.

  As shown in FIG. 5C, the laminated body is heated to bring the solder 32 into a molten state, and in this state, the metal lid 34 is pressed toward the plurality of transmission filter chips 12 and reception filter chips 14. As a result, the solder 32 is filled in the gaps of the plurality of duplexers configured by the transmission filter chip 12 and the reception filter chip 14. The solder 32 wets and spreads on the metal pattern 30 formed on the package substrate 10, solidifies, and is bonded to the upper surface of the metal pattern 30. In addition, a metal lid 34 is disposed so as to extend on the solder 32 from the plurality of transmission filter chips 12 and the plurality of reception filter chips 14. For example, the metal lid 34 is in contact with the upper surfaces of the transmission filter chip 12 and the reception filter chip 14, but the solder 32 may remain between the metal lid 34, the transmission filter chip 12, and the reception filter chip 14. Thereby, the plurality of transmission filter chips 12 and the plurality of reception filter chips 14 are sealed by the sealing portion 36 including the solder 32 and the metal lid 34.

  As shown in FIG. 6A, the sealing portion 36, the metal pattern 30, and the package substrate 10 are diced between a plurality of duplexers including the transmission filter chip 12 and the reception filter chip 14. Cut by dicing using.

  As shown in FIG. 6 (b), a plurality of duplexers composed of the transmission filter chip 12 and the reception filter chip 14 are separated into pieces by cutting by dicing. As shown in FIG. 6C, a protective film 38 that covers the sealing portion 36 is formed by electrolytic plating. By including such a manufacturing process, the duplexer 100 of the first embodiment can be formed.

  Here, in describing the effect of the duplexer of the first embodiment, the duplexer of the comparative example 1 will be described. FIG. 7A is a cross-sectional view showing a duplexer according to Comparative Example 1, and FIG. 7B is an enlarged cross-sectional view of region A in FIG. 7A and 7B, in the duplexer of Comparative Example 1, the second adhesion layer 52a of the metal pattern 30 has the same thickness as the first adhesion layer 42 of the electrode pad 16. It has become. Other configurations are the same as those of the first embodiment shown in FIGS. 1A and 1B, and the description thereof is omitted.

  The duplexer of Comparative Example 1 is the manufacturing method of the duplexer of Example 1 described with reference to FIGS. 4A to 6C except that the electrolytic plating process of FIG. 4B is not performed. Can be formed by the same method.

  In Comparative Example 1, the second adhesion layer 52 a of the metal pattern 30 has the same thickness as the first adhesion layer 42 of the electrode pad 16. Since the first adhesion layer 42 is preferably thin from the viewpoint of reducing the height of the acoustic wave device, the second adhesion layer 52a is also thin. Therefore, in the sealing step (step of FIG. 5C), when the solder 32 diffuses into the second adhesion layer 52a and the solder 32 and the metal (nickel (Ni)) of the second adhesion layer 52a are alloyed, This alloy film reaches the upper surface of the second lower metal layer 50 and is formed. When the dicing process (the process of FIG. 6A) is performed in a state where the alloy film is formed on the upper surface of the second lower metal layer 50, the upper surface of the second lower metal layer 50 is applied due to the stress applied to the metal pattern 30. A leak path due to peeling is formed, and the airtightness is lowered. As an example of the stress applied to the metal pattern 30, stress due to dicing has been described, but even when stress other than dicing is applied, a leak path due to peeling is formed on the upper surface of the second lower metal layer 50.

  On the other hand, in Example 1, as shown in FIG. 1B, the thickness of the second adhesion layer 52 of the metal pattern 30 is thicker than that of the first adhesion layer 42 of the electrode pad 16. Thus, even if the solder 32 diffuses into the second adhesion layer 52 and the solder 32 and the metal (nickel (Ni)) of the second adhesion layer 52 are alloyed, the alloy film becomes the second lower metal layer 50. Reaching to the upper surface of can be suppressed. Therefore, even when a stress is applied to the metal pattern 30, it is possible to suppress the peeling on the upper surface of the second lower metal layer 50, and as a result, it is possible to suppress a decrease in hermeticity. In addition, since only the second adhesion layer 52 of the metal pattern 30 is thickened and the first adhesion layer 42 of the electrode pad 16 is not thickened, it is possible to prevent the duplexer 100 from becoming high.

  The bumps 18 may be solder bumps, but are preferably metal bumps other than solder (for example, gold bumps). When the bump 18 is a solder bump, the solder of the solder bump and the first adhesive layer 42 of the electrode pad 16 are alloyed and peeled off from the upper surface of the first lower metal layer 40 when the electrode pad 16 is subjected to external stress. This is because there is a risk of occurrence.

  As shown in FIG. 5B to FIG. 6A, a seal including a solder 32 surrounding the acoustic wave filter chip and a flat metal lid 34 extending from the acoustic wave filter chip onto the solder 32. When the elastic wave filter chip is sealed by the stop portion 36, a step of cutting the metal pattern 30 or the like by dicing using the dicing blade 98 occurs. By dicing the metal pattern 30, stress is applied to the metal pattern 30, and when the second adhesion layer 52 a is thin as in the first comparative example, peeling occurs on the upper surface of the second lower metal layer 50. For this reason, when the sealing portion 36 includes the solder 32 surrounding the acoustic wave filter chip and the metal lid 34 having a flat shape extending from the acoustic wave filter chip to the solder 32, the second portion is used. The thickness of the adhesion layer 52 is preferably larger than that of the first adhesion layer 42.

  In Example 1, the second lower metal layer 50 is made of silver (Ag), the second adhesion layer 52 is made of nickel (Ni), and the second upper metal layer 54 is made of gold (Au). However, it may be made of other metals. For example, the second lower metal layer 50 may be made of tungsten (W), the second adhesion layer 52 may be made of copper (Cu), and the second upper metal layer 54 may be made of gold (Au).

  The first lower metal layer 40 and the second lower metal layer 50 are made of the same material and the same film thickness, and the first upper metal layer 44 and the second upper metal layer 54 are made of the same material and the same film thickness, The first adhesion layer 42 and the second adhesion layer 52 are preferably made of the same material. In this case, as described in FIGS. 4A to 4D, the first lower metal layer 40 and the second lower metal layer 50, the first adhesion layer 42 and the second adhesion layer 52, and the first upper layer. Since the metal layer 44 and the second upper metal layer 54 can be manufactured at the same time, the cost can be reduced.

  In the first embodiment, the case where the acoustic wave chip flip-chip mounted on the package substrate 10 is a SAW device chip is shown as an example, but a Love wave device chip, a boundary acoustic wave device chip, a piezoelectric thin film resonator (FBAR: Film) Other acoustic wave chips such as a Bulk Acoustic Resonator device chip may be used. The elastic wave device is not limited to the duplexer, but may be other elastic wave devices.

  Although the embodiments of the present invention have been described in detail above, the present invention is not limited to such specific embodiments, and various modifications and changes can be made within the scope of the gist of the present invention described in the claims. It can be changed.

DESCRIPTION OF SYMBOLS 10 Package board | substrate 12 Transmission filter chip 14 Reception filter chip 16 Electrode pad 18 Bump 30 Metal pattern 32 Solder 34 Metal lid 36 Sealing part 40 First lower layer metal layer 42 First adhesion layer 44 First upper layer metal layer 50 Second lower layer metal Layer 52 Second adhesion layer 54 Second upper metal layer

Claims (5)

An electrode pad provided on the package substrate, in which a first lower metal layer, a first adhesion layer, and a first upper metal layer made of a metal different from the first lower metal layer are stacked in this order;
An acoustic wave chip bonded to the electrode pad and flip-chip mounted on the package substrate;
A metal that is provided on the package substrate so as to surround the acoustic wave chip, and has a second lower metal layer, a second adhesive layer having a thickness larger than the first adhesive layer, and a metal different from the second lower metal layer A metal pattern in which a second upper metal layer comprising:
A solder bonded to the upper surface of the second upper metal layer and not bonded to the side surfaces of the second upper metal layer, the second adhesion layer, and the second lower metal layer; An elastic wave device comprising: a sealing portion that stops. An electrode pad provided on the package substrate, in which a first lower metal layer, a first adhesion layer, and a first upper metal layer made of a metal different from the first lower metal layer are stacked in this order;
An acoustic wave chip bonded to the electrode pad and flip-chip mounted on the package substrate;
A metal that is provided on the package substrate so as to surround the acoustic wave chip, and has a second lower metal layer, a second adhesive layer having a thickness larger than the first adhesive layer, and a metal different from the second lower metal layer A metal pattern in which a second upper metal layer comprising:
Including a solder bonded to the upper surface of the metal pattern, and a sealing portion for sealing the acoustic wave chip,
The first lower metal layer and the second lower metal layer are made of the same material and the same film thickness, and the first upper metal layer and the second upper metal layer are made of the same material and the same film thickness, An elastic wave device, wherein the first adhesive layer and the second adhesive layer are made of the same material. 3. The acoustic wave device according to claim 1, wherein the acoustic wave chip is bonded to the electrode pad by a metal bump other than solder. The sealing portion includes the solder bonded to the upper surface of the metal pattern and surrounding the acoustic wave chip, and a flat metal lid extending from the acoustic wave chip onto the solder. The acoustic wave device according to any one of claims 1 to 3, wherein the acoustic wave device is provided.   5. The first lower metal layer is made of silver or tungsten, the second adhesion layer is made of nickel or copper, and the second upper metal layer is made of gold. 6. The elastic wave device as described.

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