JP6306832B2 - 半導体装置および半導体装置の作製方法 - Google Patents

半導体装置および半導体装置の作製方法 Download PDF

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Publication number
JP6306832B2
JP6306832B2 JP2013141215A JP2013141215A JP6306832B2 JP 6306832 B2 JP6306832 B2 JP 6306832B2 JP 2013141215 A JP2013141215 A JP 2013141215A JP 2013141215 A JP2013141215 A JP 2013141215A JP 6306832 B2 JP6306832 B2 JP 6306832B2
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film
semiconductor layer
electrode
insulating film
semiconductor
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Japanese (ja)
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JP2014030014A (ja
JP2014030014A5 (https=
Inventor
山崎　舜平
舜平 山崎
大和 相原
大和 相原
正美 神長
正美 神長
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2013141215A 2012-07-06 2013-07-05 半導体装置および半導体装置の作製方法 Expired - Fee Related JP6306832B2 (ja)

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JP2013141215A JP6306832B2 (ja) 2012-07-06 2013-07-05 半導体装置および半導体装置の作製方法

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JP2012152603 2012-07-06
JP2012152603 2012-07-06
JP2013141215A JP6306832B2 (ja) 2012-07-06 2013-07-05 半導体装置および半導体装置の作製方法

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JP2014030014A JP2014030014A (ja) 2014-02-13
JP2014030014A5 JP2014030014A5 (https=) 2016-08-25
JP6306832B2 true JP6306832B2 (ja) 2018-04-04

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Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9564535B2 (en) * 2014-02-28 2017-02-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
TWI657488B (zh) * 2014-03-20 2019-04-21 日商半導體能源研究所股份有限公司 半導體裝置、具有該半導體裝置的顯示裝置、具有該顯示裝置的顯示模組以及具有該半導體裝置、該顯示裝置和該顯示模組的電子裝置
TWI672804B (zh) * 2014-05-23 2019-09-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置的製造方法
JP6418631B2 (ja) * 2014-06-17 2018-11-07 株式会社アルバック 透明導電性基板およびその製造方法、並びにタッチパネル
TWI563669B (en) * 2014-08-04 2016-12-21 Innolux Corp Thin film transistor and display panel using the same
KR102254524B1 (ko) * 2014-09-22 2021-05-21 엘지디스플레이 주식회사 유기전계발광 표시장치
WO2016067159A1 (en) 2014-10-28 2016-05-06 Semiconductor Energy Laboratory Co., Ltd. Functional panel, method for manufacturing the same, module, data processing device
US20170317217A1 (en) * 2014-11-11 2017-11-02 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
JP6388282B2 (ja) * 2014-12-01 2018-09-12 株式会社Ｊｏｌｅｄ 薄膜トランジスタ基板の製造方法
TWI777164B (zh) * 2015-03-30 2022-09-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
US10164120B2 (en) * 2015-05-28 2018-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN106887436B (zh) * 2015-12-16 2019-10-25 鸿富锦精密工业（深圳）有限公司 薄膜晶体管阵列基板及其制备方法
JP6851814B2 (ja) * 2015-12-29 2021-03-31 株式会社半導体エネルギー研究所 トランジスタ
KR102450856B1 (ko) * 2015-12-30 2022-10-05 엘지디스플레이 주식회사 디스플레이 패널 및 이를 갖는 디스플레이 장치
US9806179B2 (en) * 2016-01-14 2017-10-31 Hon Hai Precision Industry Co., Ltd. Method for fabricating conducting structure and thin film transistor array panel
US9793409B2 (en) * 2016-01-14 2017-10-17 Hon Hai Precision Industry Co., Ltd. Thin film transistor array panel
CN114068724A (zh) * 2016-01-29 2022-02-18 株式会社半导体能源研究所 半导体装置以及晶体管
US10333004B2 (en) * 2016-03-18 2019-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module and electronic device
CN107589582A (zh) * 2017-09-04 2018-01-16 深圳市华星光电技术有限公司 Coa显示面板及其制作方法、coa显示装置
US12237389B2 (en) * 2018-11-02 2025-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2020157554A1 (ja) * 2019-01-29 2020-08-06 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
CN117157768A (zh) * 2022-03-30 2023-12-01 京东方科技集团股份有限公司 金属氧化物薄膜晶体管、阵列基板及显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4516713B2 (ja) * 2002-01-21 2010-08-04 東京エレクトロン株式会社 エッチング方法
JP4801407B2 (ja) * 2004-09-30 2011-10-26 株式会社半導体エネルギー研究所 表示装置の作製方法
JP5328083B2 (ja) * 2006-08-01 2013-10-30 キヤノン株式会社 酸化物のエッチング方法
JP4999400B2 (ja) * 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP5361651B2 (ja) * 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8741702B2 (en) * 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101648927B1 (ko) * 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US20120032172A1 (en) * 2010-08-06 2012-02-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9202822B2 (en) * 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

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