JP6306615B2 - 半絶縁性ｉｉｉ族窒化物の混合ドーピング - Google Patents
半絶縁性ｉｉｉ族窒化物の混合ドーピング Download PDFInfo
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- JP6306615B2 JP6306615B2 JP2015558994A JP2015558994A JP6306615B2 JP 6306615 B2 JP6306615 B2 JP 6306615B2 JP 2015558994 A JP2015558994 A JP 2015558994A JP 2015558994 A JP2015558994 A JP 2015558994A JP 6306615 B2 JP6306615 B2 JP 6306615B2
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- Prior art keywords
- doped portion
- semi
- dopant
- insulating
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 81
- 229910002601 GaN Inorganic materials 0.000 claims description 78
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 70
- 239000002019 doping agent Substances 0.000 claims description 46
- 230000004888 barrier function Effects 0.000 claims description 15
- 150000004767 nitrides Chemical class 0.000 claims description 15
- 230000007547 defect Effects 0.000 claims description 11
- 230000003446 memory effect Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- -1 (Ga Chemical class 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
- H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/775,661 US9306009B2 (en) | 2013-02-25 | 2013-02-25 | Mix doping of a semi-insulating Group III nitride |
| US13/775,661 | 2013-02-25 | ||
| PCT/US2014/017658 WO2014130802A1 (en) | 2013-02-25 | 2014-02-21 | Mix doping of a semi-insulating group iii nitride |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016511545A JP2016511545A (ja) | 2016-04-14 |
| JP2016511545A5 JP2016511545A5 (enExample) | 2016-06-02 |
| JP6306615B2 true JP6306615B2 (ja) | 2018-04-04 |
Family
ID=50238490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015558994A Active JP6306615B2 (ja) | 2013-02-25 | 2014-02-21 | 半絶縁性ｉｉｉ族窒化物の混合ドーピング |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9306009B2 (enExample) |
| EP (2) | EP2959499A1 (enExample) |
| JP (1) | JP6306615B2 (enExample) |
| WO (1) | WO2014130802A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6151487B2 (ja) * | 2012-07-10 | 2017-06-21 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| JP6283250B2 (ja) * | 2014-04-09 | 2018-02-21 | サンケン電気株式会社 | 半導体基板及び半導体素子 |
| US10062756B2 (en) | 2014-10-30 | 2018-08-28 | Semiconductor Components Industries, Llc | Semiconductor structure including a doped buffer layer and a channel layer and a process of forming the same |
| JP6539128B2 (ja) * | 2015-06-29 | 2019-07-03 | サンケン電気株式会社 | 半導体デバイス用基板、半導体デバイス、並びに半導体デバイスの製造方法 |
| JP6759886B2 (ja) * | 2016-09-06 | 2020-09-23 | 富士通株式会社 | 半導体結晶基板、半導体装置、半導体結晶基板の製造方法及び半導体装置の製造方法 |
| JP6615075B2 (ja) * | 2016-09-15 | 2019-12-04 | サンケン電気株式会社 | 半導体デバイス用基板、半導体デバイス、及び、半導体デバイス用基板の製造方法 |
| TWI642183B (zh) * | 2017-12-25 | 2018-11-21 | 新唐科技股份有限公司 | 氮化物半導體元件 |
| CN109887838B (zh) * | 2018-12-04 | 2021-12-24 | 中国电子科技集团公司第十三研究所 | 一种氮化镓材料掺杂铁元素的方法 |
| US11101378B2 (en) | 2019-04-09 | 2021-08-24 | Raytheon Company | Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors |
| US11545566B2 (en) * | 2019-12-26 | 2023-01-03 | Raytheon Company | Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancement |
| US11362190B2 (en) | 2020-05-22 | 2022-06-14 | Raytheon Company | Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers |
| US12176430B2 (en) * | 2020-07-24 | 2024-12-24 | Vanguard International Semiconductor Corporation | Semiconductor structure and semiconductor device |
| WO2022068256A1 (zh) * | 2020-09-30 | 2022-04-07 | 苏州能讯高能半导体有限公司 | 半导体器件的外延结构及其制备方法 |
| CN114551593B (zh) * | 2022-01-17 | 2025-08-12 | 江西兆驰半导体有限公司 | 一种外延片、外延片生长方法及高电子迁移率晶体管 |
| EP4484620A4 (en) | 2022-02-22 | 2025-06-04 | Mitsubishi Chemical Corporation | GAN epitaxial substrate |
| KR20240163110A (ko) | 2022-03-14 | 2024-11-18 | 미쯔비시 케미컬 주식회사 | GaN 에피택셜 기판 |
| JP7779207B2 (ja) * | 2022-06-22 | 2025-12-03 | 信越半導体株式会社 | 窒化物半導体ウェーハ、及びその製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US95A (en) | 1836-12-02 | Manufacture of | ||
| US7170A (en) | 1850-03-12 | Cast-iron | ||
| US7170095B2 (en) | 2003-07-11 | 2007-01-30 | Cree Inc. | Semi-insulating GaN and method of making the same |
| US7135715B2 (en) * | 2004-01-07 | 2006-11-14 | Cree, Inc. | Co-doping for fermi level control in semi-insulating Group III nitrides |
| JP4728582B2 (ja) * | 2004-02-18 | 2011-07-20 | 古河電気工業株式会社 | 高電子移動度トランジスタ |
| US7456443B2 (en) * | 2004-11-23 | 2008-11-25 | Cree, Inc. | Transistors having buried n-type and p-type regions beneath the source region |
| US7459718B2 (en) * | 2005-03-23 | 2008-12-02 | Nichia Corporation | Field effect transistor |
| KR101515100B1 (ko) * | 2008-10-21 | 2015-04-24 | 삼성전자주식회사 | 발광 다이오드 및 그 제조 방법 |
| JP5697012B2 (ja) * | 2009-03-31 | 2015-04-08 | 古河電気工業株式会社 | 溝の形成方法、および電界効果トランジスタの製造方法 |
| JP5328704B2 (ja) * | 2010-03-24 | 2013-10-30 | 日立電線株式会社 | 窒化物半導体エピタキシャルウェハおよび電界効果型トランジスタ素子 |
| JP5696392B2 (ja) | 2010-07-29 | 2015-04-08 | 住友電気工業株式会社 | 半導体装置 |
| JP2012243886A (ja) * | 2011-05-18 | 2012-12-10 | Sharp Corp | 半導体装置 |
-
2013
- 2013-02-25 US US13/775,661 patent/US9306009B2/en active Active
-
2014
- 2014-02-21 JP JP2015558994A patent/JP6306615B2/ja active Active
- 2014-02-21 EP EP14708753.0A patent/EP2959499A1/en not_active Withdrawn
- 2014-02-21 WO PCT/US2014/017658 patent/WO2014130802A1/en not_active Ceased
- 2014-02-21 EP EP23170936.1A patent/EP4254506A3/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014130802A1 (en) | 2014-08-28 |
| EP4254506A2 (en) | 2023-10-04 |
| EP4254506A3 (en) | 2023-11-08 |
| JP2016511545A (ja) | 2016-04-14 |
| EP2959499A1 (en) | 2015-12-30 |
| US20140239308A1 (en) | 2014-08-28 |
| US9306009B2 (en) | 2016-04-05 |
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