JP6305950B2 - 真空アークプラズマを輸送するための方法 - Google Patents
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H—ELECTRICITY
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- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J37/32—Gas-filled discharge tubes
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Description
Claims (8)
- カソードアークエバポレータからプラズマ源の出口(5)まで粗大粒子フィルタ(3,6,7)を備えるプラズマ−光学システムにおいて、電磁気的コイルによって生成される輸送磁界に応答して真空カソードアークプラズマを輸送する方法であって、
(a)前記輸送磁界は、一定磁界と、プラズマ源の前記粗大粒子フィルタ(3,6,7)の表面からプラズマ流を偏向させる可変の複数の追加磁界との重ね合わせにより誘起され、
(b)前記可変の複数の追加磁界が、複数の追加の電磁気的コイル(16)を使用して誘導されており、前記追加磁界の強度が、カソード(1)と、アノード(2)の間の特定の電位差が前記アノード(2)を通して流れるアーク電流に正比例するか、または前記アノード(2)を通して流れる特定のアーク電流の値が前記アノードの電位低下に逆比例するように可変とされ、
(c)前記追加の電磁気的コイル(16)は、アーク電源(15)の正端子に接続されて前記アノード(2)を取り囲んで磁界(8)の追加強度を生成し、前記追加の電磁気的コイル(16)により、前記追加強度が、前記プラズマ流が前記アノード(2)内の前記粗大粒子フィルタ(3)に近づくにつれて増加し、前記プラズマ流が前記粗大粒子フィルタ(3)から離れると減少することを特徴とする、方法。 - 前記プラズマ−光学システムにおけるプラズマガイドによる前記プラズマ流の輸送の間、前記一定磁界は、2つの電磁気的コイル(9,10)によって誘導され、前記電磁気的コイル(9)が、前記カソード(1)を取り囲み、前記電磁気的コイル(10)が前記プラズマ源の出口(5)を取り囲むことを特徴とする、請求項1に記載の方法。
- 前記プラズマ−光学システムにおけるプラズマガイドによる前記プラズマ流の輸送の間、前記輸送磁界の一定磁界は、2つの電磁気的コイル(9,10)によって誘導され、前記電磁気的コイル(9)が、前記カソード(1)を取り囲み、前記電磁気的コイル(10)が、前記プラズマ源の出口(5)の近くの前記プラズマガイドを取り囲んでいて、前記追加の電磁気的コイル(16,18)が、前記プラズマ−光学システムの非線形部分を取り囲むことを特徴とする、請求項1に記載の方法。
- 前記プラズマ源において、アノード(2)の内側に、前記アノード(2)に接続されると共に軸上に配置され、かつ粗大粒子を反射させるために前記カソード(1)に向かって閉じた端部を備える導電性のチューブセグメント(11)を備え、前記チューブセグメント(11)の外側面と、前記アノード(2)の内側面との間を流れる前記プラズマ流が、前記チューブセグメント(11)の内部において同軸に配置された電磁気的偏向コイル(12)によって誘導される偏向磁界(13)に晒されて輸送されており、前記偏向磁界(13)は、前記プラズマ−光学システムの前記一定磁界とは反対向きの磁界を含み、前記電磁気的偏向コイル(12)によって誘導される磁界の磁界強度が前記チューブセグメント(11)を通して流れるアーク電流の増減に正比例して増減される、請求項2に記載の方法。
- 前記アノード(2)からの前記プラズマ流は、プラズマガイド内を輸送され、当該プラズマガイド内では、前記プラズマ流が前記プラズマガイドを取り囲む追加の電磁気的コイル(18)で生成された前記一定磁界と同方向の前記追加磁界に晒されており、前記追加磁界の強度は、前記プラズマガイドを通して流れる前記アーク電流の増減に正比例して増減される、請求項1に記載の方法。
- 前記アノード(2)からの前記プラズマ流は、前記プラズマガイド内を輸送され、当該プラズマガイド内では、前記プラズマ流が前記プラズマガイドを取り囲む追加の電磁気的コイル(18)で生成された前記一定磁界と同方向の前記追加磁界に晒されており、前記追加磁界の強度は、前記プラズマガイドを流れる前記アーク電流の増減に正比例して増減される、請求項4に記載の方法。
- 前記アノード(2)からの前記プラズマ流は、互いに絶縁されかつ前記アノード(2)から電気的に絶縁された入口(4)および前記出口(5)を備えるプラズマガイド内を、前記一定磁界と同方向であり、前記プラズマガイドの前記入口(4)を取り囲む追加の電磁気的コイル(18)によって提供される前記追加磁界に晒されて輸送され、前記追加磁界の強度は、前記プラズマガイドの前記出口(5)を通して流れるアーク電流の増減に正比例して増減することを特徴とする、請求項1に記載の方法。
- 前記アノード(2)からの前記プラズマ流は、互いに絶縁されかつ前記アノードから電気的に絶縁された入口(4)および前記出口(5)を備える前記プラズマガイド内を、前記一定磁界と同方向であり、前記プラズマガイドの前記入口(4)を取り囲む追加の電磁気的コイル(18)によって提供される追加磁界に晒されて輸送され、前記追加磁界の強度は、前記プラズマガイドの前記出口(5)を通して流れるアーク電流の増減に正比例して増減することを特徴とする、請求項4に記載の方法。
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UAA201013230A UA97584C2 (ru) | 2010-11-08 | 2010-11-08 | СПОСОБ ТРАНСПОРТИРОВКИ Вакуумно-дуговой Катодной ПЛАЗМЫ С фильтрованием От макрочастиц И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ |
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EP (1) | EP2639330B1 (ja) |
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US8698400B2 (en) * | 2009-04-28 | 2014-04-15 | Leybold Optics Gmbh | Method for producing a plasma beam and plasma source |
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JP2014503935A (ja) | 2014-02-13 |
JP5833662B2 (ja) | 2015-12-16 |
US20130214684A1 (en) | 2013-08-22 |
KR101575145B1 (ko) | 2015-12-07 |
JP2015159113A (ja) | 2015-09-03 |
WO2012064311A1 (ru) | 2012-05-18 |
CN103298969B (zh) | 2015-09-16 |
UA97584C2 (ru) | 2012-02-27 |
EP2639330A4 (en) | 2015-07-08 |
US9035552B2 (en) | 2015-05-19 |
EP2639330A1 (en) | 2013-09-18 |
KR20130132469A (ko) | 2013-12-04 |
EP2639330B1 (en) | 2017-09-20 |
CN103298969A (zh) | 2013-09-11 |
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