JP6304582B2 - 波長可変レーザの制御方法 - Google Patents

波長可変レーザの制御方法 Download PDF

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Publication number
JP6304582B2
JP6304582B2 JP2014014781A JP2014014781A JP6304582B2 JP 6304582 B2 JP6304582 B2 JP 6304582B2 JP 2014014781 A JP2014014781 A JP 2014014781A JP 2014014781 A JP2014014781 A JP 2014014781A JP 6304582 B2 JP6304582 B2 JP 6304582B2
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Japan
Prior art keywords
wavelength
tunable laser
etalon
temperature
oscillation
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JP2014014781A
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English (en)
Japanese (ja)
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JP2015111644A (ja
JP2015111644A5 (enExample
Inventor
充宜 宮田
充宜 宮田
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2014014781A priority Critical patent/JP6304582B2/ja
Priority to US14/528,919 priority patent/US9564735B2/en
Publication of JP2015111644A publication Critical patent/JP2015111644A/ja
Publication of JP2015111644A5 publication Critical patent/JP2015111644A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1212—Chirped grating

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2014014781A 2013-10-30 2014-01-29 波長可変レーザの制御方法 Active JP6304582B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014014781A JP6304582B2 (ja) 2013-10-30 2014-01-29 波長可変レーザの制御方法
US14/528,919 US9564735B2 (en) 2013-10-30 2014-10-30 Method for controlling wavelength tunable laser

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013226014 2013-10-30
JP2013226014 2013-10-30
JP2014014781A JP6304582B2 (ja) 2013-10-30 2014-01-29 波長可変レーザの制御方法

Publications (3)

Publication Number Publication Date
JP2015111644A JP2015111644A (ja) 2015-06-18
JP2015111644A5 JP2015111644A5 (enExample) 2017-03-02
JP6304582B2 true JP6304582B2 (ja) 2018-04-04

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JP2014014781A Active JP6304582B2 (ja) 2013-10-30 2014-01-29 波長可変レーザの制御方法

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US (1) US9564735B2 (enExample)
JP (1) JP6304582B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015050284A (ja) * 2013-08-30 2015-03-16 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
JP6292499B2 (ja) * 2013-08-30 2018-03-14 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
JP7019283B2 (ja) * 2016-02-15 2022-02-15 古河電気工業株式会社 波長可変型レーザモジュールおよびその波長制御方法
JP6821901B2 (ja) 2016-07-11 2021-01-27 住友電工デバイス・イノベーション株式会社 波長可変レーザの駆動条件設定方法及び波長可変レーザシステム
JP7207651B2 (ja) * 2018-12-27 2023-01-18 住友電工デバイス・イノベーション株式会社 波長可変レーザ装置の制御方法
CN112397996B (zh) * 2019-08-16 2022-04-15 中国移动通信有限公司研究院 波长调整方法、装置及光模块
JP7488053B2 (ja) * 2020-02-06 2024-05-21 古河電気工業株式会社 レーザ装置およびその制御方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6291813B1 (en) * 1999-06-07 2001-09-18 Agere Systems Optoelectronics Guardian Corp. Method and system for deriving a control signal for a frequency stabilized optical source
US6400737B1 (en) * 1999-12-14 2002-06-04 Agere Systems Guardian Corp. Automatic closed-looped gain adjustment for a temperature tuned, wavelength stabilized laser source in a closed-loop feedback control system
EP1291988A1 (en) * 2001-09-10 2003-03-12 Intune Technologies Limited Frequency locking of multi-section laser diodes
US6931038B2 (en) * 2002-07-08 2005-08-16 Technology Asset Trust Wavelength locked semiconductor laser module
JP4943255B2 (ja) 2007-07-20 2012-05-30 住友電工デバイス・イノベーション株式会社 半導体レーザの制御方法
JP2009081512A (ja) * 2007-09-25 2009-04-16 Fujitsu Ltd 光送信装置および設定値決定方法
US8290376B2 (en) * 2008-12-05 2012-10-16 Sumitomo Electric Industries, Ltd. Optical receiver for the WDM system and the method for controlling the same
JP5229163B2 (ja) * 2009-09-01 2013-07-03 富士通オプティカルコンポーネンツ株式会社 波長制御方法および光送信装置
JP2011108910A (ja) * 2009-11-19 2011-06-02 Sumitomo Electric Ind Ltd 光半導体装置

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JP2015111644A (ja) 2015-06-18
US20150117479A1 (en) 2015-04-30
US9564735B2 (en) 2017-02-07

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