JP6302166B2 - 分散型過渡電圧抑制を用いる避雷のための方法およびシステム - Google Patents
分散型過渡電圧抑制を用いる避雷のための方法およびシステム Download PDFInfo
- Publication number
- JP6302166B2 JP6302166B2 JP2013070796A JP2013070796A JP6302166B2 JP 6302166 B2 JP6302166 B2 JP 6302166B2 JP 2013070796 A JP2013070796 A JP 2013070796A JP 2013070796 A JP2013070796 A JP 2013070796A JP 6302166 B2 JP6302166 B2 JP 6302166B2
- Authority
- JP
- Japan
- Prior art keywords
- electrical
- tvs
- distributed
- wires
- connector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B7/00—Insulated conductors or cables characterised by their form
- H01B7/17—Protection against damage caused by external factors, e.g. sheaths or armouring
- H01B7/28—Protection against damage caused by moisture, corrosion, chemical attack or weather
- H01B7/2813—Protection against damage caused by electrical, chemical or water tree deterioration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/042—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage comprising means to limit the absorbed power or indicate damaged over-voltage protection device
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/044—Physical layout, materials not provided for elsewhere
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/20—Breakdown diodes, e.g. avalanche diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/8303—Diamond
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
Landscapes
- Emergency Protection Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/436,060 US9042072B2 (en) | 2012-03-30 | 2012-03-30 | Method and system for lightning protection with distributed transient voltage suppression |
| US13/436,060 | 2012-03-30 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013215090A JP2013215090A (ja) | 2013-10-17 |
| JP2013215090A5 JP2013215090A5 (enExample) | 2016-05-19 |
| JP6302166B2 true JP6302166B2 (ja) | 2018-03-28 |
Family
ID=47913287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013070796A Expired - Fee Related JP6302166B2 (ja) | 2012-03-30 | 2013-03-29 | 分散型過渡電圧抑制を用いる避雷のための方法およびシステム |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9042072B2 (enExample) |
| EP (1) | EP2645377B1 (enExample) |
| JP (1) | JP6302166B2 (enExample) |
| CN (1) | CN103368159A (enExample) |
| BR (1) | BR102013007061A2 (enExample) |
| CA (1) | CA2810063C (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201119046D0 (en) * | 2011-11-04 | 2011-12-14 | Rolls Royce Plc | Electrial harness |
| US9036323B1 (en) | 2012-09-04 | 2015-05-19 | The Boeing Company | Power feeder shielding for electromagnetic protection |
| US9520705B2 (en) * | 2012-09-04 | 2016-12-13 | The Boeing Company | Lightning protection for spaced electrical bundles |
| US9112343B1 (en) * | 2012-09-04 | 2015-08-18 | The Boeing Company | Power feeder shielding for electromagnetic protection |
| US9383405B2 (en) * | 2013-04-10 | 2016-07-05 | Hamilton Sundstrand Corporation | Transient voltage suppression protection circuit including built in testing |
| US9111750B2 (en) * | 2013-06-28 | 2015-08-18 | General Electric Company | Over-voltage protection of gallium nitride semiconductor devices |
| US9997507B2 (en) | 2013-07-25 | 2018-06-12 | General Electric Company | Semiconductor assembly and method of manufacture |
| WO2015130563A1 (en) | 2014-02-28 | 2015-09-03 | United Technologies Corporation | Protected wireless network |
| US10103540B2 (en) * | 2014-04-24 | 2018-10-16 | General Electric Company | Method and system for transient voltage suppression devices with active control |
| US9806157B2 (en) | 2014-10-03 | 2017-10-31 | General Electric Company | Structure and method for transient voltage suppression devices with a two-region base |
| CN105244698A (zh) * | 2015-09-30 | 2016-01-13 | 宁波环球广电科技有限公司 | 缆线雷击消除装置 |
| US11385366B2 (en) * | 2016-04-18 | 2022-07-12 | Westerngeco L.L.C. | Lightning protection for land seismic sensor unit |
| EP4353616B1 (en) * | 2022-01-05 | 2025-10-15 | Contemporary Amperex Technology (Hong Kong) Limited | Electrical connection structure with flexible tie, and battery |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3551783A (en) | 1970-01-21 | 1970-12-29 | Us Army | Rectifier and transient suppressor |
| GB1447763A (en) | 1972-11-02 | 1976-09-02 | Westinghouse Brake & Signal | Semiconductor device |
| US4325097A (en) | 1979-09-17 | 1982-04-13 | General Semiconductor Industries, Inc. | Four terminal pulse suppressor |
| JPS63245504A (ja) * | 1987-01-15 | 1988-10-12 | ザ ビー.エフ.グッドリッチ カンパニー | 除氷方法およびその装置 |
| JPH0318225A (ja) * | 1989-06-15 | 1991-01-25 | Toshiba Corp | サージ抑制装置 |
| US5103289A (en) | 1990-02-06 | 1992-04-07 | Square D Company | Dual sip package structures |
| GB9121967D0 (en) | 1991-10-16 | 1991-11-27 | Philips Electronic Associated | A two terminal semiconductor device |
| JP3229100B2 (ja) * | 1993-12-21 | 2001-11-12 | 三菱重工業株式会社 | 長尺可撓性水中設置物の水中下降制御装置 |
| JPH07220585A (ja) * | 1994-02-04 | 1995-08-18 | Meidensha Corp | 発弧サージ保護装置 |
| JP3087883B2 (ja) * | 1994-03-25 | 2000-09-11 | エム・アイ・シー株式会社 | ケーブル圧接ハーネスの製造方法 |
| JPH11220816A (ja) * | 1998-01-30 | 1999-08-10 | Mitsubishi Electric Corp | 絶縁開閉装置 |
| JP3955396B2 (ja) * | 1998-09-17 | 2007-08-08 | 株式会社ルネサステクノロジ | 半導体サージ吸収素子 |
| US6489660B1 (en) | 2001-05-22 | 2002-12-03 | General Semiconductor, Inc. | Low-voltage punch-through bi-directional transient-voltage suppression devices |
| US6707108B2 (en) | 2001-06-21 | 2004-03-16 | Inpaq Technology Co., Ltd. | Transient voltage suppressor structure |
| JP2003234680A (ja) * | 2002-02-08 | 2003-08-22 | Mitsubishi Electric Corp | 光海底ケーブル通信システム |
| US7054127B1 (en) * | 2003-06-18 | 2006-05-30 | Cisco Technology, Inc. | Methods and apparatus to protect against voltage surges |
| US6919625B2 (en) | 2003-07-10 | 2005-07-19 | General Semiconductor, Inc. | Surface mount multichip devices |
| US6867436B1 (en) | 2003-08-05 | 2005-03-15 | Protek Devices, Lp | Transient voltage suppression device |
| US7457885B2 (en) * | 2005-02-10 | 2008-11-25 | Asoka Usa Corporation | Powerline communication system and method using coupler design for additional users |
| US7417841B2 (en) * | 2003-12-04 | 2008-08-26 | Surge Suppression, Inc. | Apparatus and method for fusing voltage surge and transient anomalies in a surge suppression device |
| US20050201035A1 (en) * | 2004-03-12 | 2005-09-15 | Buckmeier Brian J. | Connectors having transient voltage suppression components and transient voltage suppression components in a connector |
| US7633259B2 (en) * | 2006-07-31 | 2009-12-15 | General Electric Company | Method and apparatus for operating electrical machines |
| US7741706B2 (en) | 2006-09-29 | 2010-06-22 | Microsemi Corporation | Plastic surface mount large area power device |
| US7751169B2 (en) * | 2006-10-02 | 2010-07-06 | Harris Stratex Networks Operating Corporation | Signal distribution and surge detection and protection module and method |
| US7339776B1 (en) | 2006-12-12 | 2008-03-04 | Pratt & Whitney Rocketdyne, Inc. | Silicon carbide diode voltage limiter |
| US20090015978A1 (en) | 2007-07-12 | 2009-01-15 | Clark O Melville | Non-inductive silicon transient voltage suppressor |
| FR2931594B1 (fr) | 2008-05-20 | 2010-08-13 | Schneider Electric Ind Sas | Dispositif de protection d'un circuit electrique contre les surtensions |
| US8274164B2 (en) | 2008-11-06 | 2012-09-25 | Microsemi Corporation | Less expensive high power plastic surface mount package |
| US7944031B2 (en) | 2008-11-24 | 2011-05-17 | Fairchild Semiconductor Corporation | Leadframe-based chip scale semiconductor packages |
| US8445917B2 (en) | 2009-03-20 | 2013-05-21 | Cree, Inc. | Bidirectional silicon carbide transient voltage suppression devices |
| CA2777119C (en) * | 2009-10-09 | 2018-05-15 | Shell Internationale Research Maatschappij B.V. | Press-fit coupling joint for joining insulated conductors |
| CN201893603U (zh) * | 2010-10-20 | 2011-07-06 | 即墨市供电公司 | 一种高安全性能的电源供电系统 |
| US8638535B2 (en) * | 2011-01-10 | 2014-01-28 | Hamilton Sundstrand Corporation | Vertical mount transient voltage suppressor array |
| US8530902B2 (en) * | 2011-10-26 | 2013-09-10 | General Electric Company | System for transient voltage suppressors |
-
2012
- 2012-03-30 US US13/436,060 patent/US9042072B2/en active Active
-
2013
- 2013-03-21 CA CA2810063A patent/CA2810063C/en not_active Expired - Fee Related
- 2013-03-25 EP EP13160926.5A patent/EP2645377B1/en active Active
- 2013-03-26 BR BR102013007061-0A patent/BR102013007061A2/pt not_active Application Discontinuation
- 2013-03-28 CN CN2013101036345A patent/CN103368159A/zh active Pending
- 2013-03-29 JP JP2013070796A patent/JP6302166B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013215090A (ja) | 2013-10-17 |
| US20130258541A1 (en) | 2013-10-03 |
| EP2645377A3 (en) | 2017-01-04 |
| US9042072B2 (en) | 2015-05-26 |
| BR102013007061A2 (pt) | 2015-07-07 |
| EP2645377A2 (en) | 2013-10-02 |
| CN103368159A (zh) | 2013-10-23 |
| CA2810063C (en) | 2020-05-19 |
| CA2810063A1 (en) | 2013-09-30 |
| EP2645377B1 (en) | 2019-05-22 |
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