JP6302166B2 - 分散型過渡電圧抑制を用いる避雷のための方法およびシステム - Google Patents

分散型過渡電圧抑制を用いる避雷のための方法およびシステム Download PDF

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Publication number
JP6302166B2
JP6302166B2 JP2013070796A JP2013070796A JP6302166B2 JP 6302166 B2 JP6302166 B2 JP 6302166B2 JP 2013070796 A JP2013070796 A JP 2013070796A JP 2013070796 A JP2013070796 A JP 2013070796A JP 6302166 B2 JP6302166 B2 JP 6302166B2
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Japan
Prior art keywords
electrical
tvs
distributed
wires
connector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013070796A
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English (en)
Japanese (ja)
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JP2013215090A (ja
JP2013215090A5 (enExample
Inventor
アーロン・ジェイ・ノブロック
エマッド・アンダラウィス・アンダライウィス
ハリー・カーク・マシューズ,ジュニア
アヴィナッシュ・スリクリシュナン・カシュヤップ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
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Publication date
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Publication of JP2013215090A5 publication Critical patent/JP2013215090A5/ja
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Expired - Fee Related legal-status Critical Current
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B7/00Insulated conductors or cables characterised by their form
    • H01B7/17Protection against damage caused by external factors, e.g. sheaths or armouring
    • H01B7/28Protection against damage caused by moisture, corrosion, chemical attack or weather
    • H01B7/2813Protection against damage caused by electrical, chemical or water tree deterioration
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/042Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage comprising means to limit the absorbed power or indicate damaged over-voltage protection device
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/044Physical layout, materials not provided for elsewhere
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117Shapes of semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/20Breakdown diodes, e.g. avalanche diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303Diamond
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325Silicon carbide
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503Nitride Group III-V materials, e.g. AlN or GaN
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing

Landscapes

  • Emergency Protection Circuit Devices (AREA)
JP2013070796A 2012-03-30 2013-03-29 分散型過渡電圧抑制を用いる避雷のための方法およびシステム Expired - Fee Related JP6302166B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/436,060 US9042072B2 (en) 2012-03-30 2012-03-30 Method and system for lightning protection with distributed transient voltage suppression
US13/436,060 2012-03-30

Publications (3)

Publication Number Publication Date
JP2013215090A JP2013215090A (ja) 2013-10-17
JP2013215090A5 JP2013215090A5 (enExample) 2016-05-19
JP6302166B2 true JP6302166B2 (ja) 2018-03-28

Family

ID=47913287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013070796A Expired - Fee Related JP6302166B2 (ja) 2012-03-30 2013-03-29 分散型過渡電圧抑制を用いる避雷のための方法およびシステム

Country Status (6)

Country Link
US (1) US9042072B2 (enExample)
EP (1) EP2645377B1 (enExample)
JP (1) JP6302166B2 (enExample)
CN (1) CN103368159A (enExample)
BR (1) BR102013007061A2 (enExample)
CA (1) CA2810063C (enExample)

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GB201119046D0 (en) * 2011-11-04 2011-12-14 Rolls Royce Plc Electrial harness
US9036323B1 (en) 2012-09-04 2015-05-19 The Boeing Company Power feeder shielding for electromagnetic protection
US9520705B2 (en) * 2012-09-04 2016-12-13 The Boeing Company Lightning protection for spaced electrical bundles
US9112343B1 (en) * 2012-09-04 2015-08-18 The Boeing Company Power feeder shielding for electromagnetic protection
US9383405B2 (en) * 2013-04-10 2016-07-05 Hamilton Sundstrand Corporation Transient voltage suppression protection circuit including built in testing
US9111750B2 (en) * 2013-06-28 2015-08-18 General Electric Company Over-voltage protection of gallium nitride semiconductor devices
US9997507B2 (en) 2013-07-25 2018-06-12 General Electric Company Semiconductor assembly and method of manufacture
WO2015130563A1 (en) 2014-02-28 2015-09-03 United Technologies Corporation Protected wireless network
US10103540B2 (en) * 2014-04-24 2018-10-16 General Electric Company Method and system for transient voltage suppression devices with active control
US9806157B2 (en) 2014-10-03 2017-10-31 General Electric Company Structure and method for transient voltage suppression devices with a two-region base
CN105244698A (zh) * 2015-09-30 2016-01-13 宁波环球广电科技有限公司 缆线雷击消除装置
US11385366B2 (en) * 2016-04-18 2022-07-12 Westerngeco L.L.C. Lightning protection for land seismic sensor unit
EP4353616B1 (en) * 2022-01-05 2025-10-15 Contemporary Amperex Technology (Hong Kong) Limited Electrical connection structure with flexible tie, and battery

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JPH11220816A (ja) * 1998-01-30 1999-08-10 Mitsubishi Electric Corp 絶縁開閉装置
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Also Published As

Publication number Publication date
JP2013215090A (ja) 2013-10-17
US20130258541A1 (en) 2013-10-03
EP2645377A3 (en) 2017-01-04
US9042072B2 (en) 2015-05-26
BR102013007061A2 (pt) 2015-07-07
EP2645377A2 (en) 2013-10-02
CN103368159A (zh) 2013-10-23
CA2810063C (en) 2020-05-19
CA2810063A1 (en) 2013-09-30
EP2645377B1 (en) 2019-05-22

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