JP6294125B2 - 静電気保護素子 - Google Patents
静電気保護素子 Download PDFInfo
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- JP6294125B2 JP6294125B2 JP2014071674A JP2014071674A JP6294125B2 JP 6294125 B2 JP6294125 B2 JP 6294125B2 JP 2014071674 A JP2014071674 A JP 2014071674A JP 2014071674 A JP2014071674 A JP 2014071674A JP 6294125 B2 JP6294125 B2 JP 6294125B2
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- semiconductor
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- 239000004065 semiconductor Substances 0.000 claims description 151
- 239000012535 impurity Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 71
- 239000002019 doping agent Substances 0.000 description 19
- 230000015556 catabolic process Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000002344 surface layer Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 238000004088 simulation Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Description
Claims (2)
- 半導体層及び絶縁膜を備え、
前記半導体層は、
主面に露出する第1導電型の第1半導体領域と、
前記主面に露出しており、前記第1半導体領域に囲まれる第2導電型の第2半導体領域と、
前記主面に露出しており、前記第1半導体領域に隣接する第2導電型の第3半導体領域と、
前記主面に露出しており、前記第3半導体領域に囲まれる第1導電型の第4半導体領域と、
前記主面から離れており、前記第1半導体領域及び前記第3半導体領域に接しており、前記第1半導体領域の不純物濃度よりも濃い第1導電型の第5半導体領域と、を有し、
前記絶縁膜は、前記第1半導体領域と前記第3半導体領域の接合面が前記半導体層の前記主面に露出する露出部分を被覆しており、
前記第5半導体領域は、前記半導体層の前記主面に直交する方向から観測したときに、前記露出部分に重複する位置に配置されている静電気保護素子。 - 前記第5半導体領域は、前記半導体層の前記主面に直交する方向から観測したときに、分散配置されている、請求項1に記載の静電気保護素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014071674A JP6294125B2 (ja) | 2014-03-31 | 2014-03-31 | 静電気保護素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014071674A JP6294125B2 (ja) | 2014-03-31 | 2014-03-31 | 静電気保護素子 |
Publications (2)
Publication Number | Publication Date |
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JP2015195252A JP2015195252A (ja) | 2015-11-05 |
JP6294125B2 true JP6294125B2 (ja) | 2018-03-14 |
Family
ID=54434052
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014071674A Active JP6294125B2 (ja) | 2014-03-31 | 2014-03-31 | 静電気保護素子 |
Country Status (1)
Country | Link |
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JP (1) | JP6294125B2 (ja) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5719733A (en) * | 1995-11-13 | 1998-02-17 | Lsi Logic Corporation | ESD protection for deep submicron CMOS devices with minimum tradeoff for latchup behavior |
JP3810375B2 (ja) * | 2003-03-14 | 2006-08-16 | ローム株式会社 | 半導体装置 |
JP2010067632A (ja) * | 2008-09-08 | 2010-03-25 | Sharp Corp | 静電気保護素子 |
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2014
- 2014-03-31 JP JP2014071674A patent/JP6294125B2/ja active Active
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JP2015195252A (ja) | 2015-11-05 |
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