JP6281958B2 - カスタマイズ可能な流れの注入を伴うエピタキシャルチャンバ - Google Patents

カスタマイズ可能な流れの注入を伴うエピタキシャルチャンバ Download PDF

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Publication number
JP6281958B2
JP6281958B2 JP2015539628A JP2015539628A JP6281958B2 JP 6281958 B2 JP6281958 B2 JP 6281958B2 JP 2015539628 A JP2015539628 A JP 2015539628A JP 2015539628 A JP2015539628 A JP 2015539628A JP 6281958 B2 JP6281958 B2 JP 6281958B2
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Japan
Prior art keywords
gas
process gas
substrate
injection device
adjustable
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Japanese (ja)
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JP2015534283A (ja
JP2015534283A5 (ko
Inventor
シュー−クワン ラウ，
シュー−クワン ラウ，
チョーポン ツォン，
チョーポン ツォン，
メフメト トゥールル サミール，
メフメト トゥールル サミール，
ジーユエン イェー，
ジーユエン イェー，
デーヴィッド ケー． カールソン，
デーヴィッド ケー． カールソン，
シュエピン リー，
シュエピン リー，
エロール アントニオ シー． サンチェス，
エロール アントニオ シー． サンチェス，
スワミナタン スリニバサン，
スワミナタン スリニバサン，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2015534283A5 publication Critical patent/JP2015534283A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
JP2015539628A 2012-10-26 2013-10-08 カスタマイズ可能な流れの注入を伴うエピタキシャルチャンバ Active JP6281958B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261719009P 2012-10-26 2012-10-26
US61/719,009 2012-10-26
US14/047,047 US20140137801A1 (en) 2012-10-26 2013-10-07 Epitaxial chamber with customizable flow injection
US14/047,047 2013-10-07
PCT/US2013/063899 WO2014066033A1 (en) 2012-10-26 2013-10-08 Epitaxial chamber with customizable flow injection

Publications (3)

Publication Number Publication Date
JP2015534283A JP2015534283A (ja) 2015-11-26
JP2015534283A5 JP2015534283A5 (ko) 2016-12-01
JP6281958B2 true JP6281958B2 (ja) 2018-02-21

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JP2015539628A Active JP6281958B2 (ja) 2012-10-26 2013-10-08 カスタマイズ可能な流れの注入を伴うエピタキシャルチャンバ

Country Status (7)

Country Link
US (2) US20140137801A1 (ko)
JP (1) JP6281958B2 (ko)
KR (1) KR102135229B1 (ko)
CN (1) CN104756231B (ko)
SG (2) SG11201502761RA (ko)
TW (1) TWI628729B (ko)
WO (1) WO2014066033A1 (ko)

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WO2015195256A1 (en) * 2014-06-18 2015-12-23 Applied Materials, Inc. One-piece injector assembly
JP6629248B2 (ja) * 2014-06-20 2020-01-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピタキシャルチャンバへのガス注入装置
US11060203B2 (en) * 2014-09-05 2021-07-13 Applied Materials, Inc. Liner for epi chamber
US10760161B2 (en) * 2014-09-05 2020-09-01 Applied Materials, Inc. Inject insert for EPI chamber
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US20180033659A1 (en) * 2016-07-28 2018-02-01 Applied Materials, Inc. Gas purge system and method for outgassing control
US10752991B2 (en) * 2017-02-06 2020-08-25 Applied Materials, Inc. Half-angle nozzle
WO2018154823A1 (ja) 2017-02-23 2018-08-30 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
US11469079B2 (en) * 2017-03-14 2022-10-11 Lam Research Corporation Ultrahigh selective nitride etch to form FinFET devices
US11077410B2 (en) * 2017-10-09 2021-08-03 Applied Materials, Inc. Gas injector with baffle
DE102018120580A1 (de) * 2018-08-23 2020-02-27 Infineon Technologies Ag Vorrichtung und verfahren zum abscheiden einer schicht bei atmosphärendruck
WO2020046567A1 (en) * 2018-08-29 2020-03-05 Applied Materials, Inc. Chamber injector
JP6902060B2 (ja) 2019-02-13 2021-07-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、およびプログラム
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
CN111455458B (zh) * 2019-09-18 2021-11-16 北京北方华创微电子装备有限公司 外延装置及应用于外延装置的进气结构
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Also Published As

Publication number Publication date
CN104756231B (zh) 2020-08-28
US20140137801A1 (en) 2014-05-22
KR102135229B1 (ko) 2020-07-17
CN104756231A (zh) 2015-07-01
JP2015534283A (ja) 2015-11-26
WO2014066033A1 (en) 2014-05-01
SG10201703437WA (en) 2017-05-30
TWI628729B (zh) 2018-07-01
TW201419438A (zh) 2014-05-16
US20180209043A1 (en) 2018-07-26
SG11201502761RA (en) 2015-06-29
KR20150074165A (ko) 2015-07-01

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