JP6280042B2 - 電子ペーパー能動基板とその製造方法及び電子ペーパーディスプレイスクリーン - Google Patents
電子ペーパー能動基板とその製造方法及び電子ペーパーディスプレイスクリーン Download PDFInfo
- Publication number
- JP6280042B2 JP6280042B2 JP2014542686A JP2014542686A JP6280042B2 JP 6280042 B2 JP6280042 B2 JP 6280042B2 JP 2014542686 A JP2014542686 A JP 2014542686A JP 2014542686 A JP2014542686 A JP 2014542686A JP 6280042 B2 JP6280042 B2 JP 6280042B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- common electrode
- forming
- via hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 102
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000002161 passivation Methods 0.000 claims description 96
- 239000011347 resin Substances 0.000 claims description 47
- 229920005989 resin Polymers 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 229910003437 indium oxide Inorganic materials 0.000 claims 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052718 tin Inorganic materials 0.000 claims 2
- 238000003860 storage Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 15
- 239000010409 thin film Substances 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000001962 electrophoresis Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/1675—Constructional details
- G02F1/1676—Electrodes
- G02F1/16766—Electrodes for active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
- G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/1675—Constructional details
- G02F1/1676—Electrodes
- G02F1/16761—Side-by-side arrangement of working electrodes and counter-electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/1675—Constructional details
- G02F1/1676—Electrodes
- G02F1/16762—Electrodes having three or more electrodes per pixel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/1675—Constructional details
- G02F1/16756—Insulating layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Molecular Biology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Description
2−ゲート電極
3−第1の共通電極
4−ゲート電極絶縁層
5−ソースドレイン電極
6−パッシベーション層
7−樹脂パッシベーション層
8−画素電極層
9−第2の共通電極
10−第1のビアホール
11−第2のビアホール
Claims (8)
- ベース基板と、ゲート電極と、第1の共通電極と、第2の共通電極と、ゲート電極絶縁層と、能動層と、ソースドレイン電極と、パッシベーション層と、樹脂パッシベーション層と、画素電極層と、を備える電子ペーパー能動基板であって、
前記ゲート電極と前記第1の共通電極が前記ベース基板上に設けられ、
前記ゲート電極に前記ゲート電極絶縁層、能動層、ソースドレイン電極、パッシベーション層、樹脂パッシベーション層及び画素電極層が順次に設けられ、
前記第1の共通電極にゲート電極絶縁層、ソースドレイン電極、パッシベーション層、第2の共通電極層、樹脂パッシベーション層、及び画素電極層が順次に設けられ、
前記第1の共通電極と前記第2の共通電極とが電気的に接続され、
前記第1の共通電極と前記第2の共通電極とが平行に配置され、前記ゲート電極絶縁層及び前記パッシベーション層を通過する第2のビアホールを介して互いに電気的に接続され、前記第1及び第2の共通電極と前記画素電極層とが互いに重なる領域の全体に亘って、前記画素電極層は前記第1及び第2の共通電極に平行であることを特徴とする電子ペーパー能動基板。 - 前記第2の共通電極の材料は金属または酸化インジウム・錫、あるいは金属または酸化インジウム・錫の組合せであることを特徴とする請求項1に記載の電子ペーパー能動基板。
- 前記第1の共通電極の面積と画素電極層における対応する画素ユニットにおける画素電極の面積との比率は、30%よりも小さくないことを特徴とする請求項1または2に記載の電子ペーパー能動基板。
- 前記第2の共通電極の面積と画素電極層における対応する画素ユニットにおける画素電極の面積との比率は、30%よりも小さくないことを特徴とする請求項1から3のいずれか一項に記載の電子ペーパー能動基板。
- 前記第1の共通電極と第2の共通電極がないソースドレイン電極の上方において、前記樹脂パッシベーション層とパッシベーション層に第1のビアホールが形成され、画素電極層が前記第1のビアホールを介して前記ソースドレイン電極に電気的に接続されることを特徴とする請求項1から4のいずれか一項に記載の電子ペーパー能動基板。
- 電子ペーパー能動基板の製造方法であって、
ベース基板上にゲート電極と第1の共通電極を形成する、ゲート電極及び第1の共通電極の形成ステップと、
前記ゲート電極、第1の共通電極及びベース基板表面にゲート電極絶縁層を形成する、ゲート電極絶縁層の形成ステップと、
前記ゲート電極絶縁層に能動層を形成する、能動層の形成ステップと、
前記能動層にソースドレイン電極を形成し、ソースドレイン電極が少なくとも部分的に第1の共通電極上のゲート電極絶縁層に設けられ、ソースドレイン電極が第1の共通電極上のゲート電極絶縁層を完全に被覆をしない、ソースドレイン電極の形成ステップと、
前記ソースドレイン電極の形成ステップから得られた構造上にパッシベーション層を形成する、パッシベーション層の形成ステップと、
前記パッシベーション層と前記ゲート電極絶縁層を通過する第2のビアホールを形成し、第2のビアホールを介して第1の共通電極の一部分を露出する、第2のビアホールの形成ステップと、
第2の共通電極を形成し、前記第2の共通電極がパッシベーション層に形成され、かつ前記第2のビアホールを介して前記第1の共通電極に接続される、第2の共通電極の形成ステップと、
前記第2の共通電極の形成ステップから得られた構造表面に樹脂パッシベーション層を形成する、樹脂パッシベーション層の形成ステップと、
前記第1の共通電極と第2の共通電極がないソースドレイン電極の上に、樹脂パッシベーション層とパッシベーション層を通過してソースドレイン電極の一部分を露出させる第1のビアホールを形成する、第1のビアホールの形成ステップと、
前記第1のビアホールの形成ステップから得られた構造表面に、前記第1のビアホールを介して前記ソースドレイン電極の露出部分に接続される画素電極層を形成する、画素電極層の形成ステップと、
を備え、
前記第1のビアホールの形成ステップは、
前記パッシベーション層の形成ステップの後、前記パッシベーション層に第1のビアホールの下部分を形成する、第1のビアホールの第1の形成ステップを備える、電子ペーパー能動基板の製造方法。 - 前記樹脂パッシベーション層の形成ステップは、前記樹脂パッシベーション層で前記第1のビアホールの下部分を充填させ、
前記第1のビアホールの形成ステップは、樹脂パッシベーション層に前記第1のビアホールの下部分を含み、ソースドレイン電極の一部分を露出する前記第1のビアホールが形成される、第1のビアホールの第2の形成ステップを備え、
前記第1のビアホールの第2の形成ステップから得られた構造表面に、前記第1のビアホールを介して前記ソースドレイン電極の露出部分に接続される画素電極層を形成する、画素電極の形成ステップを備えることを特徴とする請求項6に記載の電子ペーパー能動基板の製造方法。 - 請求項1から5のいずれか一項に記載の電子ペーパー能動基板を備えることを特徴とする電子ペーパーディスプレイスクリーン。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110375687.3 | 2011-11-23 | ||
CN201110375687.3A CN102645811B (zh) | 2011-11-23 | 2011-11-23 | 电子纸有源基板及其制造方法和电子纸显示屏 |
PCT/CN2012/082361 WO2013075551A1 (zh) | 2011-11-23 | 2012-09-28 | 电子纸有源基板及其制造方法和电子纸显示屏 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014534478A JP2014534478A (ja) | 2014-12-18 |
JP6280042B2 true JP6280042B2 (ja) | 2018-02-14 |
Family
ID=46658717
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014542686A Active JP6280042B2 (ja) | 2011-11-23 | 2012-09-28 | 電子ペーパー能動基板とその製造方法及び電子ペーパーディスプレイスクリーン |
Country Status (6)
Country | Link |
---|---|
US (1) | US8861065B2 (ja) |
EP (1) | EP2784575B1 (ja) |
JP (1) | JP6280042B2 (ja) |
KR (1) | KR101431655B1 (ja) |
CN (1) | CN102645811B (ja) |
WO (1) | WO2013075551A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102645811B (zh) * | 2011-11-23 | 2014-07-02 | 京东方科技集团股份有限公司 | 电子纸有源基板及其制造方法和电子纸显示屏 |
CN105914212B (zh) * | 2016-05-09 | 2019-02-05 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、以及显示装置 |
CN107978612B (zh) | 2017-11-30 | 2021-01-26 | 京东方科技集团股份有限公司 | 柔性显示基板及其制备方法、柔性显示面板及显示装置 |
CN108598093B (zh) | 2018-05-24 | 2021-01-15 | 京东方科技集团股份有限公司 | 阵列基板的制造方法、阵列基板和显示面板 |
CN116256907A (zh) * | 2022-12-30 | 2023-06-13 | 惠科股份有限公司 | 混排产品的制备方法及电子纸面板 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980069199A (ko) * | 1997-02-27 | 1998-10-26 | 배순훈 | 광효율을 향상시킬 수 있는 박막형 광로 조절장치 및 그 제조 방법 |
US5920421A (en) * | 1997-12-10 | 1999-07-06 | Daewoo Electronics Co., Ltd. | Thin film actuated mirror array in an optical projection system and method for manufacturing the same |
WO1999049667A1 (en) * | 1998-03-20 | 1999-09-30 | Daewoo Electronics Co., Ltd. | Thin film actuated mirror array in an optical projection system |
GB0302485D0 (en) | 2003-02-04 | 2003-03-05 | Plastic Logic Ltd | Pixel capacitors |
CN1621923A (zh) * | 2003-11-29 | 2005-06-01 | 鸿富锦精密工业(深圳)有限公司 | 存储电容 |
JP4438665B2 (ja) * | 2005-03-29 | 2010-03-24 | シャープ株式会社 | 液晶表示装置 |
JP2007156388A (ja) * | 2005-11-14 | 2007-06-21 | Seiko Epson Corp | 発光装置および電子機器 |
KR101281885B1 (ko) * | 2005-11-18 | 2013-07-03 | 엘지디스플레이 주식회사 | 전기 영동 표시 장치 |
JP2007212812A (ja) * | 2006-02-10 | 2007-08-23 | Epson Imaging Devices Corp | 電気光学装置 |
KR101346921B1 (ko) | 2008-02-19 | 2014-01-02 | 엘지디스플레이 주식회사 | 평판 표시 장치 및 그 제조방법 |
CN101685233B (zh) * | 2008-09-23 | 2012-06-27 | 乐金显示有限公司 | 电泳显示设备及其制造方法 |
KR101276749B1 (ko) * | 2009-08-03 | 2013-06-19 | 엘지디스플레이 주식회사 | 전기영동 표시장치 및 그 제조 방법 |
CN201555984U (zh) * | 2009-09-30 | 2010-08-18 | 深圳莱宝高科技股份有限公司 | 用于电润湿显示装置的薄膜晶体管 |
CN102054833B (zh) * | 2009-11-09 | 2013-03-06 | 京东方科技集团股份有限公司 | 薄膜晶体管基板及其制造方法 |
JP2011145391A (ja) * | 2010-01-13 | 2011-07-28 | Seiko Epson Corp | 電気泳動表示装置及び電子機器 |
KR101670887B1 (ko) * | 2010-03-22 | 2016-11-10 | 삼성디스플레이 주식회사 | 전기영동 표시장치 및 이의 제조방법 |
JP5540843B2 (ja) * | 2010-04-05 | 2014-07-02 | セイコーエプソン株式会社 | 電気光学装置用基板、電気光学装置、及び電子機器 |
CN102645811B (zh) * | 2011-11-23 | 2014-07-02 | 京东方科技集团股份有限公司 | 电子纸有源基板及其制造方法和电子纸显示屏 |
-
2011
- 2011-11-23 CN CN201110375687.3A patent/CN102645811B/zh active Active
-
2012
- 2012-09-28 EP EP12788101.9A patent/EP2784575B1/en active Active
- 2012-09-28 WO PCT/CN2012/082361 patent/WO2013075551A1/zh active Application Filing
- 2012-09-28 KR KR1020127031145A patent/KR101431655B1/ko active IP Right Grant
- 2012-09-28 US US13/703,469 patent/US8861065B2/en active Active
- 2012-09-28 JP JP2014542686A patent/JP6280042B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
EP2784575A4 (en) | 2015-07-08 |
EP2784575A1 (en) | 2014-10-01 |
US20140071514A1 (en) | 2014-03-13 |
EP2784575B1 (en) | 2020-02-26 |
CN102645811B (zh) | 2014-07-02 |
US8861065B2 (en) | 2014-10-14 |
JP2014534478A (ja) | 2014-12-18 |
WO2013075551A1 (zh) | 2013-05-30 |
KR20130070606A (ko) | 2013-06-27 |
CN102645811A (zh) | 2012-08-22 |
KR101431655B1 (ko) | 2014-08-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106409845B (zh) | 开关元件及其制备方法、阵列基板以及显示装置 | |
CN104393000B (zh) | 一种阵列基板及其制作方法、显示装置 | |
TWI523205B (zh) | 畫素結構及顯示面板 | |
CN103439840B (zh) | 一种阵列基板、显示装置及阵列基板的制造方法 | |
US20160126258A1 (en) | Low temperature poly-silicon array substrate and forming method thereof | |
KR101985246B1 (ko) | 금속 산화물을 포함하는 박막 트랜지스터 기판 및 그 제조방법 | |
JP6280042B2 (ja) | 電子ペーパー能動基板とその製造方法及び電子ペーパーディスプレイスクリーン | |
CN106876479B (zh) | 薄膜晶体管及其制备方法、阵列基板及其制备方法、显示面板 | |
TW200937089A (en) | Flat display device and method for manufacturing the same | |
CN103489826A (zh) | 阵列基板、制备方法以及显示装置 | |
KR101096336B1 (ko) | 에프에프에스 모드 액정표시장치 및 그 제조방법 | |
CN102929060B (zh) | 阵列基板及其制作方法、显示装置 | |
US8633069B2 (en) | Array substrate and manufacturing method thereof, active display | |
TWI474092B (zh) | 畫素結構及其製造方法 | |
CN105652543A (zh) | 阵列基板及其制作方法、显示器件 | |
TWI664472B (zh) | Array substrate and display device | |
CN108417579A (zh) | 一种显示基板及其制造方法 | |
CN215895193U (zh) | 显示面板和显示装置 | |
WO2015149464A1 (zh) | 一种阵列基板及其制造方法、液晶显示屏 | |
CN202126557U (zh) | 一种阵列基板 | |
TW201312237A (zh) | 用於邊緣電場切換模式液晶顯示裝置的陣列基板及其製造方法 | |
KR20140096635A (ko) | 인셀 터치 방식 액정표시장치 및 그 제작 방법 | |
CN103941448B (zh) | 一种薄膜晶体管阵列基板及其制备方法、液晶显示器 | |
KR20160057526A (ko) | 게이트 배선과 데이터 배선 사이의 절연성을 향상한 평판 표시장치용 박막 트랜지스터 기판 및 그 제조 방법 | |
CN108594547A (zh) | 像素结构及其制作方法、阵列基板和显示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150907 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160713 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160808 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161107 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170508 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170803 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171225 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180118 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6280042 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |