JP6258185B2 - 油充填パッケージングにおける表面電荷耐性のためのmems圧力センサフィールドシールドレイアウト - Google Patents

油充填パッケージングにおける表面電荷耐性のためのmems圧力センサフィールドシールドレイアウト Download PDF

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JP6258185B2
JP6258185B2 JP2014231454A JP2014231454A JP6258185B2 JP 6258185 B2 JP6258185 B2 JP 6258185B2 JP 2014231454 A JP2014231454 A JP 2014231454A JP 2014231454 A JP2014231454 A JP 2014231454A JP 6258185 B2 JP6258185 B2 JP 6258185B2
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Prior art keywords
sensing element
pressure
field shield
subelement
pressure sensor
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JP2014231454A
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Japanese (ja)
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JP2015232538A (ja
JP2015232538A5 (enExample
Inventor
ピー マクニール マーク
ピー マクニール マーク
ビー ストロット ダグラス
ビー ストロット ダグラス
ピー グリーン スティーヴン
ピー グリーン スティーヴン
Original Assignee
センサータ テクノロジーズ インコーポレーテッド
センサータ テクノロジーズ インコーポレーテッド
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Priority claimed from US14/082,562 external-priority patent/US20150135853A1/en
Application filed by センサータ テクノロジーズ インコーポレーテッド, センサータ テクノロジーズ インコーポレーテッド filed Critical センサータ テクノロジーズ インコーポレーテッド
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Publication of JP2015232538A5 publication Critical patent/JP2015232538A5/ja
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/06Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01FMEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/05Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects
    • G01F1/34Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure
    • G01F1/36Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure the pressure or differential pressure being created by the use of flow constriction
    • G01F1/40Details of construction of the flow constriction devices
    • G01F1/44Venturi tubes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01FMEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/76Devices for measuring mass flow of a fluid or a fluent solid material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/06Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
    • G01L19/069Protection against electromagnetic or electrostatic interferences
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L7/00Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements
    • G01L7/02Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges
    • G01L7/08Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/03Assembling devices that include piezoelectric or electrostrictive parts
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/42Piezoelectric device making

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
JP2014231454A 2013-11-18 2014-11-14 油充填パッケージングにおける表面電荷耐性のためのmems圧力センサフィールドシールドレイアウト Ceased JP6258185B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/082,562 2013-11-18
US14/082,562 US20150135853A1 (en) 2013-11-18 2013-11-18 Mems pressure sensor field shield layout for surface charge immunity in oil filled packaging
US14/539,044 2014-11-12
US14/539,044 US9557237B2 (en) 2013-11-18 2014-11-12 MEMS pressure sensor field shield layout for surface charge immunity in oil filled packaging

Publications (3)

Publication Number Publication Date
JP2015232538A JP2015232538A (ja) 2015-12-24
JP2015232538A5 JP2015232538A5 (enExample) 2017-12-07
JP6258185B2 true JP6258185B2 (ja) 2018-01-10

Family

ID=53171941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014231454A Ceased JP6258185B2 (ja) 2013-11-18 2014-11-14 油充填パッケージングにおける表面電荷耐性のためのmems圧力センサフィールドシールドレイアウト

Country Status (3)

Country Link
US (1) US9557237B2 (enExample)
JP (1) JP6258185B2 (enExample)
KR (1) KR102194166B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019109133A (ja) * 2017-12-18 2019-07-04 富士電機株式会社 圧力センサ

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10641672B2 (en) 2015-09-24 2020-05-05 Silicon Microstructures, Inc. Manufacturing catheter sensors
US10682498B2 (en) 2015-09-24 2020-06-16 Silicon Microstructures, Inc. Light shields for catheter sensors
US9790085B1 (en) * 2016-06-16 2017-10-17 Nxp Usa, Inc. Actively preventing charge induced leakage of semiconductor devices
US11029227B2 (en) 2018-06-04 2021-06-08 Vitesco Technologies USA, LLC CSOI MEMS pressure sensing element with stress equalizers
CN209326840U (zh) 2018-12-27 2019-08-30 热敏碟公司 压力传感器及压力变送器
EP3832279B1 (en) 2019-12-06 2023-11-29 Melexis Technologies NV Semiconductor stress sensor
US11573143B2 (en) 2021-04-21 2023-02-07 Vitesco Technologies USA, LLC Mems pressure sensing element with stress adjustors to minimize thermal hysteresis induced by electrical field
DE102021211561A1 (de) * 2020-11-19 2022-05-19 Vitesco Technologies USA, LLC Mems-druckerfassungselement mit spannungsjustierern
JP2025173150A (ja) * 2024-05-14 2025-11-27 ミツミ電機株式会社 圧力検出素子及び圧力センサ

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4131088A (en) 1976-11-08 1978-12-26 The Bendix Corporation Multiple function pressure sensor
US4347745A (en) 1980-12-22 1982-09-07 Bourns Instruments, Inc. Pressure measuring apparatus
US5231301A (en) 1991-10-02 1993-07-27 Lucas Novasensor Semiconductor sensor with piezoresistors and improved electrostatic structures
JP3319173B2 (ja) * 1994-09-19 2002-08-26 株式会社日立製作所 センサ
JP2000221091A (ja) * 1999-02-03 2000-08-11 Hitachi Ltd 歪み検出センサ
JP3619065B2 (ja) * 1999-07-16 2005-02-09 株式会社山武 圧力センサ
JP2001281085A (ja) * 2000-03-28 2001-10-10 Toyoda Mach Works Ltd 半導体圧力センサ及びその製造方法
JP2002162303A (ja) * 2000-11-27 2002-06-07 Yokogawa Electric Corp 圧力センサ
JP3987386B2 (ja) * 2001-11-20 2007-10-10 株式会社鷺宮製作所 圧力センサ
US6952042B2 (en) 2002-06-17 2005-10-04 Honeywell International, Inc. Microelectromechanical device with integrated conductive shield
KR100543371B1 (ko) * 2004-04-26 2006-01-20 (주)센서시스템기술 압력센서
US7884432B2 (en) 2005-03-22 2011-02-08 Ametek, Inc. Apparatus and methods for shielding integrated circuitry
JP4421511B2 (ja) * 2005-05-30 2010-02-24 三菱電機株式会社 半導体圧力センサ
TWI286383B (en) * 2005-12-23 2007-09-01 Delta Electronics Inc Semiconductor piezoresistive sensor and operation method thereof
JP2009075056A (ja) * 2007-09-25 2009-04-09 Panasonic Electric Works Co Ltd 半導体圧力センサ
US7578194B1 (en) * 2008-02-11 2009-08-25 Sensata Technologies, Inc. Differential fluid pressure measurement apparatus
US7900521B2 (en) * 2009-02-10 2011-03-08 Freescale Semiconductor, Inc. Exposed pad backside pressure sensor package
JP2011102775A (ja) * 2009-11-11 2011-05-26 Panasonic Electric Works Co Ltd 半導体圧力センサおよびその製造方法
EP2619536B1 (en) * 2010-09-20 2016-11-02 Fairchild Semiconductor Corporation Microelectromechanical pressure sensor including reference capacitor
US8809975B2 (en) 2010-12-15 2014-08-19 Panasonic Corporation Semiconductor pressure sensor
JP5793700B2 (ja) * 2010-12-15 2015-10-14 パナソニックIpマネジメント株式会社 半導体圧力センサ
CN104736983B (zh) * 2012-10-17 2017-05-31 株式会社鹭宫制作所 压力传感器以及具备该压力传感器的传感器单元
JP2014206514A (ja) * 2013-04-16 2014-10-30 パナソニック株式会社 圧力センサ
US20150135853A1 (en) * 2013-11-18 2015-05-21 Mark P. McNeal Mems pressure sensor field shield layout for surface charge immunity in oil filled packaging

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019109133A (ja) * 2017-12-18 2019-07-04 富士電機株式会社 圧力センサ
JP6992482B2 (ja) 2017-12-18 2022-01-13 富士電機株式会社 圧力センサ

Also Published As

Publication number Publication date
US20150135854A1 (en) 2015-05-21
US9557237B2 (en) 2017-01-31
KR20150058057A (ko) 2015-05-28
JP2015232538A (ja) 2015-12-24
KR102194166B1 (ko) 2020-12-22

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