KR102194166B1 - 오일 충전된 패키징의 표면 전하 면역성을 위한 미세 전자기계 시스템 압력 센서 필드 쉴드 레이아웃 - Google Patents

오일 충전된 패키징의 표면 전하 면역성을 위한 미세 전자기계 시스템 압력 센서 필드 쉴드 레이아웃 Download PDF

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KR102194166B1
KR102194166B1 KR1020140160976A KR20140160976A KR102194166B1 KR 102194166 B1 KR102194166 B1 KR 102194166B1 KR 1020140160976 A KR1020140160976 A KR 1020140160976A KR 20140160976 A KR20140160976 A KR 20140160976A KR 102194166 B1 KR102194166 B1 KR 102194166B1
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pressure
field shield
sensing element
diaphragm
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KR20150058057A (ko
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마크 피. 맥닐
더글라스 비. 스트롯
스테핀 피. 그리네
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센사타 테크놀로지스, 인크
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Priority claimed from US14/082,562 external-priority patent/US20150135853A1/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/05—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects
    • G01F1/34—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure
    • G01F1/36—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure the pressure or differential pressure being created by the use of flow constriction
    • G01F1/40—Details of construction of the flow constriction devices
    • G01F1/44—Venturi tubes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/76—Devices for measuring mass flow of a fluid or a fluent solid material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
    • G01L19/069—Protection against electromagnetic or electrostatic interferences
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L7/00—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements
    • G01L7/02—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges
    • G01L7/08—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/03—Assembling devices that include piezoelectric or electrostrictive parts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
KR1020140160976A 2013-11-18 2014-11-18 오일 충전된 패키징의 표면 전하 면역성을 위한 미세 전자기계 시스템 압력 센서 필드 쉴드 레이아웃 Active KR102194166B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/082,562 2013-11-18
US14/082,562 US20150135853A1 (en) 2013-11-18 2013-11-18 Mems pressure sensor field shield layout for surface charge immunity in oil filled packaging
US14/539,044 2014-11-12
US14/539,044 US9557237B2 (en) 2013-11-18 2014-11-12 MEMS pressure sensor field shield layout for surface charge immunity in oil filled packaging

Publications (2)

Publication Number Publication Date
KR20150058057A KR20150058057A (ko) 2015-05-28
KR102194166B1 true KR102194166B1 (ko) 2020-12-22

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KR1020140160976A Active KR102194166B1 (ko) 2013-11-18 2014-11-18 오일 충전된 패키징의 표면 전하 면역성을 위한 미세 전자기계 시스템 압력 센서 필드 쉴드 레이아웃

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US (1) US9557237B2 (enExample)
JP (1) JP6258185B2 (enExample)
KR (1) KR102194166B1 (enExample)

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US10641672B2 (en) 2015-09-24 2020-05-05 Silicon Microstructures, Inc. Manufacturing catheter sensors
US10682498B2 (en) 2015-09-24 2020-06-16 Silicon Microstructures, Inc. Light shields for catheter sensors
US9790085B1 (en) * 2016-06-16 2017-10-17 Nxp Usa, Inc. Actively preventing charge induced leakage of semiconductor devices
JP6992482B2 (ja) * 2017-12-18 2022-01-13 富士電機株式会社 圧力センサ
US11029227B2 (en) 2018-06-04 2021-06-08 Vitesco Technologies USA, LLC CSOI MEMS pressure sensing element with stress equalizers
CN209326840U (zh) 2018-12-27 2019-08-30 热敏碟公司 压力传感器及压力变送器
EP3832279B1 (en) 2019-12-06 2023-11-29 Melexis Technologies NV Semiconductor stress sensor
US11573143B2 (en) 2021-04-21 2023-02-07 Vitesco Technologies USA, LLC Mems pressure sensing element with stress adjustors to minimize thermal hysteresis induced by electrical field
DE102021211561A1 (de) * 2020-11-19 2022-05-19 Vitesco Technologies USA, LLC Mems-druckerfassungselement mit spannungsjustierern
JP2025173150A (ja) * 2024-05-14 2025-11-27 ミツミ電機株式会社 圧力検出素子及び圧力センサ

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JP2009075056A (ja) * 2007-09-25 2009-04-09 Panasonic Electric Works Co Ltd 半導体圧力センサ

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JP3619065B2 (ja) * 1999-07-16 2005-02-09 株式会社山武 圧力センサ
JP2001281085A (ja) * 2000-03-28 2001-10-10 Toyoda Mach Works Ltd 半導体圧力センサ及びその製造方法
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JP2009075056A (ja) * 2007-09-25 2009-04-09 Panasonic Electric Works Co Ltd 半導体圧力センサ

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Publication number Publication date
JP6258185B2 (ja) 2018-01-10
US20150135854A1 (en) 2015-05-21
US9557237B2 (en) 2017-01-31
KR20150058057A (ko) 2015-05-28
JP2015232538A (ja) 2015-12-24

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