JP6254608B2 - 半導体ナノワイヤへの凹んだコンタクト - Google Patents

半導体ナノワイヤへの凹んだコンタクト Download PDF

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Publication number
JP6254608B2
JP6254608B2 JP2015548787A JP2015548787A JP6254608B2 JP 6254608 B2 JP6254608 B2 JP 6254608B2 JP 2015548787 A JP2015548787 A JP 2015548787A JP 2015548787 A JP2015548787 A JP 2015548787A JP 6254608 B2 JP6254608 B2 JP 6254608B2
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nanowire
semiconductor nanowire
semiconductor
nanowires
catalyst particles
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JP2016510943A5 (enExample
JP2016510943A (ja
Inventor
イングヴァル オベーリ,
イングヴァル オベーリ,
マルティン マグヌスソン,
マルティン マグヌスソン,
ダミル アソリ,
ダミル アソリ,
ラース イヴァル サミュエルソン,
ラース イヴァル サミュエルソン,
ヨナス オールソン,
ヨナス オールソン,
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Sol Voltaics AB
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Sol Voltaics AB
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    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
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    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
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    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Thin Film Transistor (AREA)
JP2015548787A 2012-12-21 2013-12-06 半導体ナノワイヤへの凹んだコンタクト Expired - Fee Related JP6254608B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/723,413 US9012883B2 (en) 2012-12-21 2012-12-21 Recessed contact to semiconductor nanowires
PCT/IB2013/003176 WO2014096962A2 (en) 2012-12-21 2013-12-06 Recessed contact to semiconductor nanowires

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JP2016510943A JP2016510943A (ja) 2016-04-11
JP2016510943A5 JP2016510943A5 (enExample) 2017-01-19
JP6254608B2 true JP6254608B2 (ja) 2017-12-27

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US (3) US9012883B2 (enExample)
EP (1) EP2936568B1 (enExample)
JP (1) JP6254608B2 (enExample)
CN (1) CN104995741B (enExample)
WO (1) WO2014096962A2 (enExample)

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US9419086B2 (en) 2016-08-16
CN104995741B (zh) 2017-08-25
US20150200262A1 (en) 2015-07-16
EP2936568A2 (en) 2015-10-28
US20160336411A1 (en) 2016-11-17
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