JP6254608B2 - 半導体ナノワイヤへの凹んだコンタクト - Google Patents

半導体ナノワイヤへの凹んだコンタクト Download PDF

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Publication number
JP6254608B2
JP6254608B2 JP2015548787A JP2015548787A JP6254608B2 JP 6254608 B2 JP6254608 B2 JP 6254608B2 JP 2015548787 A JP2015548787 A JP 2015548787A JP 2015548787 A JP2015548787 A JP 2015548787A JP 6254608 B2 JP6254608 B2 JP 6254608B2
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nanowire
semiconductor nanowire
semiconductor
nanowires
catalyst particles
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JP2016510943A (ja
JP2016510943A5 (enExample
Inventor
イングヴァル オベーリ，
イングヴァル オベーリ，
マルティン マグヌスソン，
マルティン マグヌスソン，
ダミル アソリ，
ダミル アソリ，
ラース イヴァル サミュエルソン，
ラース イヴァル サミュエルソン，
ヨナス オールソン，
ヨナス オールソン，
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Sol Voltaics AB
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Sol Voltaics AB
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    • H10D64/205—Nanosized electrodes, e.g. nanowire electrodes
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    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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JP2015548787A 2012-12-21 2013-12-06 半導体ナノワイヤへの凹んだコンタクト Expired - Fee Related JP6254608B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/723,413 US9012883B2 (en) 2012-12-21 2012-12-21 Recessed contact to semiconductor nanowires
PCT/IB2013/003176 WO2014096962A2 (en) 2012-12-21 2013-12-06 Recessed contact to semiconductor nanowires

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JP2016510943A JP2016510943A (ja) 2016-04-11
JP2016510943A5 JP2016510943A5 (enExample) 2017-01-19
JP6254608B2 true JP6254608B2 (ja) 2017-12-27

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US (3) US9012883B2 (enExample)
EP (1) EP2936568B1 (enExample)
JP (1) JP6254608B2 (enExample)
CN (1) CN104995741B (enExample)
WO (1) WO2014096962A2 (enExample)

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US9012883B2 (en) 2012-12-21 2015-04-21 Sol Voltaics Ab Recessed contact to semiconductor nanowires
WO2016069831A1 (en) * 2014-10-30 2016-05-06 President And Fellows Of Harvard College Nanoscale wires with tip-localized junctions
WO2016071762A1 (en) * 2014-11-07 2016-05-12 Sol Voltaics Ab Shell-enabled vertical alignment and precision-assembly of a close-packed colloidal crystal film
DE102015205230B4 (de) * 2015-03-23 2023-01-19 Universität Duisburg-Essen Verfahren zur Herstellung von Bauelementen aufweisend eine Schottky-Diode mittels Drucktechnik und Bauelement
KR101787435B1 (ko) * 2016-02-29 2017-10-19 피에스아이 주식회사 나노 로드 제조방법
EP3260414A1 (en) 2016-06-21 2017-12-27 Sol Voltaics AB Method for transferring nanowires from a fluid to a substrate surface
FR3064109B1 (fr) * 2017-03-20 2025-03-14 Commissariat Energie Atomique Structure a nanofils et procede de realisation d'une telle structure
KR101919487B1 (ko) * 2017-09-14 2018-11-19 한국과학기술연구원 반도체 기판을 텍스쳐링하는 방법과, 이 방법에 의해 제조된 반도체 기판, 그리고, 이러한 반도체 기판을 포함하는 태양 전지
JP7371366B2 (ja) * 2019-06-27 2023-10-31 富士通株式会社 半導体デバイス、及びこれを用いた無線受信器
US11101744B2 (en) * 2019-12-27 2021-08-24 Michael Junior Spruill Capacitive engine featuring an extrinsic semiconductor
CN111180554B (zh) * 2020-01-08 2023-01-03 燕山大学 一种混合结构太阳能电池的制备方法
EP4138141A4 (en) * 2020-04-15 2023-06-07 Fujitsu Limited SEMICONDUCTOR DEVICE, RESERVOIR COMPUTER SYSTEM AND METHOD OF MAKING A SEMICONDUCTOR DEVICE
US11094846B1 (en) * 2020-08-31 2021-08-17 4233999 Canada Inc. Monolithic nanocolumn structures

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3870459B2 (ja) * 1996-10-28 2007-01-17 ソニー株式会社 量子細線の製造方法
JP4235440B2 (ja) 2002-12-13 2009-03-11 キヤノン株式会社 半導体デバイスアレイ及びその製造方法
US6933222B2 (en) * 2003-01-02 2005-08-23 Intel Corporation Microcircuit fabrication and interconnection
US20060207647A1 (en) 2005-03-16 2006-09-21 General Electric Company High efficiency inorganic nanorod-enhanced photovoltaic devices
US7230286B2 (en) * 2005-05-23 2007-06-12 International Business Machines Corporation Vertical FET with nanowire channels and a silicided bottom contact
EP1804286A1 (en) 2005-12-27 2007-07-04 Interuniversitair Microelektronica Centrum Elongate nanostructure semiconductor device
KR100721020B1 (ko) * 2006-01-20 2007-05-23 삼성전자주식회사 콘택 구조체를 포함하는 반도체 소자 및 그 형성 방법
DE102006013245A1 (de) * 2006-03-22 2007-10-04 Infineon Technologies Ag Verfahren zur Ausbildung von Öffnungen in einer Matrizenschicht und zur Herstellung von Kondensatoren
WO2008156421A2 (en) * 2007-06-19 2008-12-24 Qunano Ab Nanowire-based solar cell structure
US20080315430A1 (en) * 2007-06-22 2008-12-25 Qimonda Ag Nanowire vias
CN101842909A (zh) * 2007-07-19 2010-09-22 加利福尼亚技术学院 半导体的有序阵列结构
EP2019313B1 (en) * 2007-07-25 2015-09-16 Stichting IMEC Nederland Sensor device comprising elongated nanostructures, its use and manufacturing method
JP2010538464A (ja) * 2007-08-28 2010-12-09 カリフォルニア インスティテュート オブ テクノロジー ポリマ埋め込み型半導体ロッドアレイ
KR20090058952A (ko) * 2007-12-05 2009-06-10 삼성전자주식회사 나노로드를 이용한 발광소자 및 그 제조 방법
WO2010120233A2 (en) * 2009-04-15 2010-10-21 Sol Voltaics Ab Multi-junction photovoltaic cell with nanowires
US8698254B2 (en) * 2009-09-30 2014-04-15 National University Corporation Hokkaido University Tunnel field effect transistor and method for manufacturing same
US9305766B2 (en) 2009-12-22 2016-04-05 Qunano Ab Method for manufacturing a nanowire structure
JP2011187901A (ja) * 2010-03-11 2011-09-22 Canon Inc 半導体デバイスの製造方法
US7906354B1 (en) * 2010-03-30 2011-03-15 Eastman Kodak Company Light emitting nanowire device
WO2011142717A1 (en) 2010-05-11 2011-11-17 Qunano Ab Gas-phase synthesis of wires
WO2012035243A1 (fr) 2010-09-14 2012-03-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a base de nanofils pour l'émission de lumière
GB201015411D0 (en) 2010-09-15 2010-10-27 Univ Leuven Kath Anti-cancer activity of novel bicyclic heterocycles
WO2013126432A1 (en) * 2012-02-21 2013-08-29 California Institute Of Technology Axially-integrated epitaxially-grown tandem wire arrays
US9012883B2 (en) 2012-12-21 2015-04-21 Sol Voltaics Ab Recessed contact to semiconductor nanowires

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CN104995741B (zh) 2017-08-25
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US20140175372A1 (en) 2014-06-26
US9419086B2 (en) 2016-08-16
US9012883B2 (en) 2015-04-21
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