CN104995741B - 半导体纳米线的凹槽式接触 - Google Patents

半导体纳米线的凹槽式接触 Download PDF

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CN104995741B
CN104995741B CN201380073253.5A CN201380073253A CN104995741B CN 104995741 B CN104995741 B CN 104995741B CN 201380073253 A CN201380073253 A CN 201380073253A CN 104995741 B CN104995741 B CN 104995741B
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nanowire
top surface
semiconductor
nanowires
insulating
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Chinese (zh)
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CN104995741A (zh
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I.阿贝里
M.芒努松
D.阿索利
L.I.萨米尔森
J.奥尔松
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Sol Voltaics AB
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Sol Voltaics AB
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CN201380073253.5A 2012-12-21 2013-12-06 半导体纳米线的凹槽式接触 Expired - Fee Related CN104995741B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/723413 2012-12-21
US13/723,413 US9012883B2 (en) 2012-12-21 2012-12-21 Recessed contact to semiconductor nanowires
PCT/IB2013/003176 WO2014096962A2 (en) 2012-12-21 2013-12-06 Recessed contact to semiconductor nanowires

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CN104995741A CN104995741A (zh) 2015-10-21
CN104995741B true CN104995741B (zh) 2017-08-25

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US (3) US9012883B2 (enExample)
EP (1) EP2936568B1 (enExample)
JP (1) JP6254608B2 (enExample)
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WO (1) WO2014096962A2 (enExample)

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US9012883B2 (en) 2012-12-21 2015-04-21 Sol Voltaics Ab Recessed contact to semiconductor nanowires
WO2016069831A1 (en) * 2014-10-30 2016-05-06 President And Fellows Of Harvard College Nanoscale wires with tip-localized junctions
WO2016071762A1 (en) * 2014-11-07 2016-05-12 Sol Voltaics Ab Shell-enabled vertical alignment and precision-assembly of a close-packed colloidal crystal film
DE102015205230B4 (de) * 2015-03-23 2023-01-19 Universität Duisburg-Essen Verfahren zur Herstellung von Bauelementen aufweisend eine Schottky-Diode mittels Drucktechnik und Bauelement
KR101787435B1 (ko) * 2016-02-29 2017-10-19 피에스아이 주식회사 나노 로드 제조방법
EP3260414A1 (en) 2016-06-21 2017-12-27 Sol Voltaics AB Method for transferring nanowires from a fluid to a substrate surface
FR3064109B1 (fr) * 2017-03-20 2025-03-14 Commissariat Energie Atomique Structure a nanofils et procede de realisation d'une telle structure
KR101919487B1 (ko) * 2017-09-14 2018-11-19 한국과학기술연구원 반도체 기판을 텍스쳐링하는 방법과, 이 방법에 의해 제조된 반도체 기판, 그리고, 이러한 반도체 기판을 포함하는 태양 전지
JP7371366B2 (ja) * 2019-06-27 2023-10-31 富士通株式会社 半導体デバイス、及びこれを用いた無線受信器
US11101744B2 (en) * 2019-12-27 2021-08-24 Michael Junior Spruill Capacitive engine featuring an extrinsic semiconductor
CN111180554B (zh) * 2020-01-08 2023-01-03 燕山大学 一种混合结构太阳能电池的制备方法
EP4138141A4 (en) * 2020-04-15 2023-06-07 Fujitsu Limited SEMICONDUCTOR DEVICE, RESERVOIR COMPUTER SYSTEM AND METHOD OF MAKING A SEMICONDUCTOR DEVICE
US11094846B1 (en) * 2020-08-31 2021-08-17 4233999 Canada Inc. Monolithic nanocolumn structures

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CN101842909A (zh) * 2007-07-19 2010-09-22 加利福尼亚技术学院 半导体的有序阵列结构
WO2010120233A2 (en) * 2009-04-15 2010-10-21 Sol Voltaics Ab Multi-junction photovoltaic cell with nanowires
WO2012035243A1 (fr) * 2010-09-14 2012-03-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a base de nanofils pour l'émission de lumière

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US20140175372A1 (en) 2014-06-26
US9419086B2 (en) 2016-08-16
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