JP6250230B2 - 炭化珪素半導体装置の製造方法 - Google Patents

炭化珪素半導体装置の製造方法 Download PDF

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Publication number
JP6250230B2
JP6250230B2 JP2017517914A JP2017517914A JP6250230B2 JP 6250230 B2 JP6250230 B2 JP 6250230B2 JP 2017517914 A JP2017517914 A JP 2017517914A JP 2017517914 A JP2017517914 A JP 2017517914A JP 6250230 B2 JP6250230 B2 JP 6250230B2
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Prior art keywords
film
gate electrode
insulating film
gate
boron
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Japanese (ja)
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JPWO2016181903A1 (ja
Inventor
須賀原　和之
和之 須賀原
洋介 中西
洋介 中西
博明 岡部
博明 岡部
末廣　善幸
善幸 末廣
基 吉田
基 吉田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2017517914A 2015-05-14 2016-05-06 炭化珪素半導体装置の製造方法 Active JP6250230B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015098761 2015-05-14
JP2015098761 2015-05-14
PCT/JP2016/063657 WO2016181903A1 (fr) 2015-05-14 2016-05-06 Dispositif semi-conducteur en carbure de silicium et procédé de fabrication correspondant

Publications (2)

Publication Number Publication Date
JPWO2016181903A1 JPWO2016181903A1 (ja) 2017-08-10
JP6250230B2 true JP6250230B2 (ja) 2017-12-20

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JP2017517914A Active JP6250230B2 (ja) 2015-05-14 2016-05-06 炭化珪素半導体装置の製造方法

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JP (1) JP6250230B2 (fr)
WO (1) WO2016181903A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6884803B2 (ja) 2017-01-17 2021-06-09 富士電機株式会社 半導体装置および半導体装置の製造方法
DE112017006927B4 (de) * 2017-01-26 2022-07-07 Mitsubishi Electric Corporation Verfahren zum Herstellen einer Halbleitervorrichtung
US11373998B2 (en) 2018-03-28 2022-06-28 Mitsubishi Electric Corporation Semiconductor device with differences in crystallinity between components

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58201369A (ja) * 1982-05-20 1983-11-24 Nec Corp Ｍｏｓ型半導体装置の製造方法
JP3532312B2 (ja) * 1995-08-02 2004-05-31 株式会社ルネサステクノロジ 半導体装置
JP2002184980A (ja) * 2000-10-05 2002-06-28 Fuji Electric Co Ltd トレンチ型ラテラルｍｏｓｆｅｔおよびその製造方法
JP2003086790A (ja) * 2001-06-27 2003-03-20 Ricoh Co Ltd 半導体装置及びその製造方法、並びにその応用装置
JP4188637B2 (ja) * 2002-08-05 2008-11-26 独立行政法人産業技術総合研究所 半導体装置
JP2007059636A (ja) * 2005-08-25 2007-03-08 Renesas Technology Corp Ｄｍｏｓｆｅｔおよびプレーナ型ｍｏｓｆｅｔ
JPWO2010110246A1 (ja) * 2009-03-25 2012-09-27 ローム株式会社 半導体装置
JP2012004156A (ja) * 2010-06-14 2012-01-05 Toshiba Corp 半導体装置およびその製造方法
JP6218423B2 (ja) * 2013-04-25 2017-10-25 三菱電機株式会社 炭化珪素半導体装置およびその製造方法

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WO2016181903A1 (fr) 2016-11-17
JPWO2016181903A1 (ja) 2017-08-10

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