JP6245833B2 - ワイヤソーの製造方法 - Google Patents
ワイヤソーの製造方法 Download PDFInfo
- Publication number
- JP6245833B2 JP6245833B2 JP2013083332A JP2013083332A JP6245833B2 JP 6245833 B2 JP6245833 B2 JP 6245833B2 JP 2013083332 A JP2013083332 A JP 2013083332A JP 2013083332 A JP2013083332 A JP 2013083332A JP 6245833 B2 JP6245833 B2 JP 6245833B2
- Authority
- JP
- Japan
- Prior art keywords
- wire saw
- abrasive
- layer
- wire
- abrasive grains
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 92
- 239000006061 abrasive grain Substances 0.000 claims description 82
- 238000004070 electrodeposition Methods 0.000 claims description 62
- 238000005520 cutting process Methods 0.000 claims description 57
- 229910052759 nickel Inorganic materials 0.000 claims description 46
- 238000007747 plating Methods 0.000 claims description 42
- 238000002347 injection Methods 0.000 claims description 28
- 239000007924 injection Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 27
- 238000004381 surface treatment Methods 0.000 claims description 20
- 239000002245 particle Substances 0.000 claims description 17
- 230000005484 gravity Effects 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 94
- 239000002184 metal Substances 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000000047 product Substances 0.000 description 15
- 239000010432 diamond Substances 0.000 description 14
- 229910003460 diamond Inorganic materials 0.000 description 14
- 238000005498 polishing Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000002783 friction material Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000005488 sandblasting Methods 0.000 description 6
- 229910000831 Steel Inorganic materials 0.000 description 4
- 239000011324 bead Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 235000010724 Wisteria floribunda Nutrition 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005480 shot peening Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23D—PLANING; SLOTTING; SHEARING; BROACHING; SAWING; FILING; SCRAPING; LIKE OPERATIONS FOR WORKING METAL BY REMOVING MATERIAL, NOT OTHERWISE PROVIDED FOR
- B23D61/00—Tools for sawing machines or sawing devices; Clamping devices for these tools
- B23D61/18—Sawing tools of special type, e.g. wire saw strands, saw blades or saw wire equipped with diamonds or other abrasive particles in selected individual positions
- B23D61/185—Saw wires; Saw cables; Twisted saw strips
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013083332A JP6245833B2 (ja) | 2013-04-11 | 2013-04-11 | ワイヤソーの製造方法 |
TW103106232A TWI566864B (zh) | 2013-04-11 | 2014-02-25 | Manufacture of wire saws and wire saws |
KR1020140023279A KR101563418B1 (ko) | 2013-04-11 | 2014-02-27 | 와이어 쏘 및 와이어 쏘의 제조방법 |
CN201410126245.9A CN104097270B (zh) | 2013-04-11 | 2014-03-31 | 线锯及线锯的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013083332A JP6245833B2 (ja) | 2013-04-11 | 2013-04-11 | ワイヤソーの製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014205211A JP2014205211A (ja) | 2014-10-30 |
JP2014205211A5 JP2014205211A5 (zh) | 2016-06-02 |
JP6245833B2 true JP6245833B2 (ja) | 2017-12-13 |
Family
ID=51666008
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013083332A Active JP6245833B2 (ja) | 2013-04-11 | 2013-04-11 | ワイヤソーの製造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6245833B2 (zh) |
KR (1) | KR101563418B1 (zh) |
CN (1) | CN104097270B (zh) |
TW (1) | TWI566864B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104908500B (zh) * | 2015-05-18 | 2017-08-25 | 刘肖梅 | 一种钢丝纹理加工装置的雕刻轮 |
CN104849211B (zh) * | 2015-05-27 | 2017-11-17 | 深圳市常兴技术股份有限公司 | 电镀磨具表面金刚石加厚程度的检测方法 |
CN106086950B (zh) * | 2016-06-24 | 2018-12-18 | 中国有色桂林矿产地质研究院有限公司 | 一种齿缝镶嵌金刚石的内圆刀片的制备方法 |
CN108527664A (zh) * | 2018-02-09 | 2018-09-14 | 江苏中博钻石科技有限公司 | 环形金刚石线锯切割装置 |
CN110091435A (zh) * | 2019-06-12 | 2019-08-06 | 成都易德莱斯科技有限公司 | 负反馈自动调控绳锯及调控方法 |
CN110704985A (zh) * | 2019-10-16 | 2020-01-17 | 北京航空航天大学 | 一种渐开线砂轮磨削表面形貌仿真方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10100070A (ja) * | 1996-09-26 | 1998-04-21 | Toyota Banmotsupusu Kk | メタルボンド砥石 |
KR100299102B1 (ko) * | 1998-11-24 | 2001-11-22 | 홍영철 | 취성재료절단용다이아몬드전착와이어및그제조방법 |
JP2002075767A (ja) * | 2000-08-31 | 2002-03-15 | Sumitomo Special Metals Co Ltd | 耐食性被膜を有する希土類系永久磁石およびその製造方法 |
TW571000B (en) * | 2001-10-19 | 2004-01-11 | Nihon Parkerizing | Methods of preparing metal wires for plastic processing |
JP2004009238A (ja) * | 2002-06-10 | 2004-01-15 | Kanai Hiroaki | ソーワイヤ製造方法及びソーワイヤ |
JP2007152485A (ja) * | 2005-12-05 | 2007-06-21 | Kanai Hiroaki | ソーワイヤの製造方法 |
WO2007039934A1 (ja) * | 2005-12-27 | 2007-04-12 | Japan Fine Steel Co., Ltd. | 固定砥粒ワイヤ |
JP2007268627A (ja) * | 2006-03-30 | 2007-10-18 | Noritake Super Abrasive:Kk | 電着ワイヤソー |
JP5356071B2 (ja) * | 2009-03-02 | 2013-12-04 | 住友電気工業株式会社 | ダイヤモンドワイヤーソー、ダイヤモンドワイヤーソーの製造方法 |
CN102481647B (zh) * | 2009-08-14 | 2015-07-15 | 圣戈班磨料磨具有限公司 | 包括粘结到长形本体上的磨料颗粒的磨料物品 |
JP5576177B2 (ja) * | 2010-04-28 | 2014-08-20 | 株式会社リード | 固定砥粒ワイヤーソー及びその製造方法 |
JP2012157908A (ja) * | 2011-01-28 | 2012-08-23 | Sumco Corp | 硬脆性材料のスライス方法 |
JP5863170B2 (ja) * | 2011-01-31 | 2016-02-16 | サンコール株式会社 | 固定砥粒ワイヤの製造方法 |
TWM412050U (en) * | 2011-03-17 | 2011-09-21 | Tomohiko Sinosaki | Wire saw structure with fixed abrasive particle |
KR20120117594A (ko) * | 2011-04-16 | 2012-10-24 | 다이섹(주) | 엔드리스 와이어 톱용 컷팅 비드 |
CN103857494B (zh) * | 2011-09-16 | 2017-07-11 | 圣戈班磨料磨具有限公司 | 研磨制品和形成方法 |
-
2013
- 2013-04-11 JP JP2013083332A patent/JP6245833B2/ja active Active
-
2014
- 2014-02-25 TW TW103106232A patent/TWI566864B/zh not_active IP Right Cessation
- 2014-02-27 KR KR1020140023279A patent/KR101563418B1/ko active IP Right Grant
- 2014-03-31 CN CN201410126245.9A patent/CN104097270B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN104097270A (zh) | 2014-10-15 |
JP2014205211A (ja) | 2014-10-30 |
KR101563418B1 (ko) | 2015-10-26 |
KR20140122999A (ko) | 2014-10-21 |
TW201438833A (zh) | 2014-10-16 |
TWI566864B (zh) | 2017-01-21 |
CN104097270B (zh) | 2016-03-30 |
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