JP6245643B2 - 半導体装置の製造方法、基板処理装置およびプログラム - Google Patents

半導体装置の製造方法、基板処理装置およびプログラム Download PDF

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JP6245643B2
JP6245643B2 JP2014046364A JP2014046364A JP6245643B2 JP 6245643 B2 JP6245643 B2 JP 6245643B2 JP 2014046364 A JP2014046364 A JP 2014046364A JP 2014046364 A JP2014046364 A JP 2014046364A JP 6245643 B2 JP6245643 B2 JP 6245643B2
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Prior art keywords
gas
substrate
processing chamber
supplying
processing
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JP2014208883A (ja
JP2014208883A5 (enExample
Inventor
加我　友紀直
友紀直 加我
小川　有人
有人 小川
篤郎 清野
篤郎 清野
篤彦 足谷
篤彦 足谷
亮平 前野
亮平 前野
境　正憲
正憲 境
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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Priority to JP2014046364A priority Critical patent/JP6245643B2/ja
Priority to US14/226,145 priority patent/US9508555B2/en
Publication of JP2014208883A publication Critical patent/JP2014208883A/ja
Priority to US15/335,221 priority patent/US9972500B2/en
Publication of JP2014208883A5 publication Critical patent/JP2014208883A5/ja
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
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