JP6242333B2 - 検査前後の汚染回避のためのマスク、ウェーハおよび光学面の事前清浄および後清浄 - Google Patents
検査前後の汚染回避のためのマスク、ウェーハおよび光学面の事前清浄および後清浄 Download PDFInfo
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/005—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by infrared radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
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- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
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- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Toxicology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
Claims (15)
- 検査試料清浄システムであって、
光源であって、前記光源は、前記検査試料の表面に向かって光子を提供するように構成され、極紫外線(EUV)光源、真空紫外(VUV)光源、深紫外線(DUV)光源、紫外線(UV)光源、可視光源または赤外線(IR)光源のうち少なくとも1つである光源と、
ガス源であって、前記ガス源は、前記検査試料の前記表面に向かってガス混合物を提供するように構成され、前記ガス混合物は、ガス形態のH 2 、N 2 、He、Ar、Xe、H 2 O、O 2 、O 3 、CO 2 のうち少なくとも2つを含むガス源と、
を含み、
前記ガス混合物は、前記検査試料の前記表面上の、解離させるべき汚染化合物の汚染種に応じて複数の組の命令の実行により選択され、前記光子および選択された前記ガス混合物により形成された反応性遊離基により、前記検査試料の前記表面上の汚染化合物を解離させる、
検査試料清浄システム。 - 前記ガス源は、
ガス入力モジュールであって、前記ガス入力モジュールは、前記ガス混合物を提供するように構成され、前記ガス混合物は、ガス形態のH2、N2、He、Ar、Xe、H2O、O2、O3、CO2のうち少なくとも1つを含む、ガス入力モジュールと、
ガス精製モジュールであって、前記ガス精製モジュールは、前記ガス混合物を精製した後、前記ガス混合物を前記検査試料の前記表面へ向かって方向付けるように構成される、ガス精製モジュールと、
をさらに含む、請求項1に記載の検査試料清浄システム。 - ガスイオン化装置であって、前記ガスイオン化装置は、前記ガス混合物をイオン化した後、前記ガス混合物を前記検査試料の前記表面へ向かって方向付けるように構成される、ガスイオン化装置、
をさらに含む、請求項1に記載の検査試料清浄システム。 - 前記検査試料清浄システムは検査システムの一体部品であり、前記清浄システムは検査プロセスの前に用いられる、請求項1に記載の検査試料清浄システム。
- 前記検査試料清浄システムは検査システムの一体部品であり、前記清浄システムは、検査プロセスの前かつ前記検査プロセスの完了後に用いられる、請求項1に記載の検査試料清浄システム。
- 検査試料の表面上の汚染を低減する方法であって、
検査プロセス前に前記検査試料の前記表面へと、極紫外線(EUV)光子、真空紫外(VUV)光子、深紫外線(DUV)光子、紫外線(UV)光子、可視光光子または赤外線(IR)光子のうち少なくとも1つを含む光子を提供することと、
前記検査プロセス前に前記検査試料の前記表面へとガス混合物を提供することであって、前記ガス混合物は、ガス形態のH 2 、N 2 、He、Ar、Xe、H 2 O、O 2 、O 3 、CO 2 のうち少なくとも2つを含み、前記ガス混合物は、前記検査試料の前記表面上の、解離させるべき汚染化合物の汚染種に応じて複数の組の命令の実行により選択され、前記光子および選択された前記ガス混合物により形成された反応性遊離基により、前記検査試料の前記表面上の汚染化合物を解離させることと、
を含む、方法。 - 前記ガス混合物を精製した後、前記ガス混合物を前記検査試料の前記表面へ向かって方向付けること、
をさらに含む、請求項6に記載の方法。 - 前記ガス混合物をイオン化した後、前記ガス混合物を前記検査試料の前記表面へ向かって方向付けること、
をさらに含む、請求項6に記載の方法。 - 前記検査プロセスの完了後、第2のガス混合物を前記検査試料の前記表面へと提供することであって、前記光子および前記第2のガス混合物によって形成された反応性遊離基により、前記検査試料の前記表面上の汚染化合物を解離させること、
をさらに含む、請求項6に記載の方法。 - 前記第2のガス混合物は、ガス形態のH2、N2、He、Ar、Xe、H2O、O2、O3、CO2のうち少なくとも1つを含む、請求項9に記載の方法。
- 検査試料を検査する方法であって、
前記検査試料の検査前に前記検査試料の表面を事前清浄することであって、前記事前清浄は、
前記検査試料の前記表面へと、極紫外線(EUV)光子、真空紫外(VUV)光子、深紫外線(DUV)光子または赤外線(IR)光子のうち少なくとも1つを含む光子を提供することと、
ガスまたはイオン化ガスのガス混合物を前記検査試料の前記表面へと提供することであって、前記ガス混合物は、ガス形態のH 2 、N 2 、He、Ar、Xe、H 2 O、O 2 、O 3 、CO 2 のうち少なくとも2つを含み、前記ガス混合物は、前記検査試料の前記表面上の、解離させるべき汚染化合物の汚染種に応じて複数の組の命令の実行により選択され、前記光子および選択された前記ガス混合物によって形成された反応性遊離基により、前記検査試料の前記表面上の汚染化合物を解離させることと、
前記検査試料の前記表面の前記事前清浄の完了後、前記検査試料を検査することと、
をさらに含む、方法。 - 前記ガス混合物を精製した後、前記ガス混合物を前記検査試料の前記表面へと方向付けること、
をさらに含む、請求項11に記載の方法。 - 前記ガス混合物をイオン化した後、前記ガス混合物を前記検査試料の前記表面へと方向付けること、
をさらに含む、請求項11に記載の方法。 - 前記検査試料の前記検査の完了後、前記検査試料の前記表面を後清浄すること、
をさらに含み、
前記後清浄は、
前記検査試料の前記表面へと光子を提供することと、
前記検査試料の前記表面へと第2のガス混合物を提供することであって、前記光子および前記第2のガス混合物によって形成された反応性遊離基により、前記検査試料の前記表面上の汚染化合物を解離させることと、
をさらに含む、
請求項11に記載の方法。 - 前記第2のガス混合物は、ガス形態のH2、N2、He、Ar、Xe、H2O、O2、O3、CO2のうち少なくとも1つを含む、請求項14に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161479036P | 2011-04-26 | 2011-04-26 | |
US61/479,036 | 2011-04-26 | ||
US13/450,724 US9335279B2 (en) | 2011-04-26 | 2012-04-19 | Pre and post cleaning of mask, wafer, optical surfaces for prevention of contamination prior to and after inspection |
US13/450,724 | 2012-04-19 | ||
PCT/US2012/034594 WO2012148827A2 (en) | 2011-04-26 | 2012-04-20 | Pre and post cleaning of mask, wafer, optical surfaces for prevention of contamination prior to and after inspection |
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JP2014519400A JP2014519400A (ja) | 2014-08-14 |
JP6242333B2 true JP6242333B2 (ja) | 2017-12-06 |
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JP2014508452A Active JP6242333B2 (ja) | 2011-04-26 | 2012-04-20 | 検査前後の汚染回避のためのマスク、ウェーハおよび光学面の事前清浄および後清浄 |
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US (1) | US9335279B2 (ja) |
JP (1) | JP6242333B2 (ja) |
KR (1) | KR102005122B1 (ja) |
WO (1) | WO2012148827A2 (ja) |
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US9448343B2 (en) | 2013-03-15 | 2016-09-20 | Kla-Tencor Corporation | Segmented mirror apparatus for imaging and method of using the same |
US9857680B2 (en) * | 2014-01-14 | 2018-01-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cleaning module, cleaning apparatus and method of cleaning photomask |
US9839946B2 (en) * | 2015-02-04 | 2017-12-12 | The Boeing Company | System and method for high speed FOD detection |
EP3586986B1 (de) * | 2018-06-26 | 2024-09-04 | Helmholtz-Zentrum für Umweltforschung GmbH-UFZ | Vorrichtung und verfahren zur submolekularen trockenreinigung und/oder zur hydrophilisierung der oberfläche von festkörpern |
DE102019219024A1 (de) | 2019-12-06 | 2021-06-10 | Carl Zeiss Smt Gmbh | Verfahren zur Vermeidung einer Degradation eines optischen Elements, Projektionssystem, Beleuchtungssystem sowie Projektionsbelichtungsanlage |
US11543757B2 (en) | 2021-04-20 | 2023-01-03 | Kla Corporation | System and method for optical-path coupling of light for in-situ photochemical cleaning in projection imaging systems |
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JP2814021B2 (ja) * | 1990-07-09 | 1998-10-22 | 三菱電機株式会社 | 半導体基板表面の処理方法 |
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2012
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US9335279B2 (en) | 2016-05-10 |
KR20140028020A (ko) | 2014-03-07 |
JP2014519400A (ja) | 2014-08-14 |
WO2012148827A2 (en) | 2012-11-01 |
KR102005122B1 (ko) | 2019-07-29 |
WO2012148827A3 (en) | 2013-01-24 |
US20120274924A1 (en) | 2012-11-01 |
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