JP6241684B2 - 圧電振動子及び圧電振動装置 - Google Patents
圧電振動子及び圧電振動装置 Download PDFInfo
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- JP6241684B2 JP6241684B2 JP2015557877A JP2015557877A JP6241684B2 JP 6241684 B2 JP6241684 B2 JP 6241684B2 JP 2015557877 A JP2015557877 A JP 2015557877A JP 2015557877 A JP2015557877 A JP 2015557877A JP 6241684 B2 JP6241684 B2 JP 6241684B2
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- 238000006073 displacement reaction Methods 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 description 160
- 238000010586 diagram Methods 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000004088 simulation Methods 0.000 description 13
- 238000010884 ion-beam technique Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- -1 scandium aluminum Chemical compound 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
- H03H3/0076—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients
- H03H3/0077—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients by tuning of resonance frequency
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0442—Modification of the thickness of an element of a non-piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H2009/02165—Tuning
- H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H2009/155—Constructional features of resonators consisting of piezoelectric or electrostrictive material using MEMS techniques
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
110 基板
120 圧電振動子
130 蓋体
140 外部電極
200 保持部
210 振動部
220 保持腕
230 シリコン酸化物層
231 シリコン層
232 下部電極
233 圧電膜
234 上部電極
235,236 調整膜
300 基部
310 振動腕
Claims (7)
- 圧電振動子であって、
第1の電極及び第2の電極と、
前記第1の電極と前記第2の電極との間に形成され、前記第1の電極に対向する第1の面を有する圧電膜と、
前記第1の電極を介して前記圧電膜の前記第1の面と対向して形成された、第1の調整膜及び第2の調整膜と、
を備え、
前記第1の調整膜は、前記第1の面のうち、第1の領域と、当該第1の領域と異なる第2の領域において前記圧電膜を覆っており、
前記第2の調整膜は、前記第1の面のうち、前記第2の領域において前記圧電膜を覆っており、
前記第1及び第2の領域により、前記第1の面のほぼ全域が覆われ、
前記第2の領域は、当該圧電振動子の振動時に、前記第1の領域より平均変位が大きい領域であり、
前記第2の調整膜は、エッチングによる質量低減の速度が前記第1の調整膜よりも速い材料からなる、
圧電振動子。 - 請求項1に記載の圧電振動子であって、
前記第1の電極、前記第2の電極、及び前記圧電膜は、輪郭振動する矩形状の振動部を形成し、
前記第2の領域は、前記振動部の四隅に対応する領域である、
圧電振動子。 - 請求項2に記載の圧電振動子であって、
前記第2の領域の面積は、前記第1の面の面積の略10%以上略50%以下である、
圧電振動子。 - 請求項3に記載の圧電振動子であって、
前記第2の領域の面積は、前記第1の面の面積の略30%以上略50%以下である、
圧電振動子。 - 請求項3に記載の圧電振動子であって、
前記第2の領域の面積は、前記第1の面の面積の略10%以上略30%以下である、
圧電振動子。 - 圧電振動子であって、
第1の電極及び第2の電極と、
前記第1の電極と前記第2の電極との間に形成され、前記第1の電極に対向する第1の面を有する圧電膜と、
前記第1の電極を介して前記圧電膜の前記第1の面と対向して形成された、第1の調整膜及び第2の調整膜と、
を備え、
前記第1の調整膜は、前記第1の面のうち、少なくとも第1の領域において前記圧電膜を覆っており、
前記第2の調整膜は、前記第1の面のうち、少なくとも前記第1の領域と異なる第2の領域において前記圧電膜を覆っており、
前記第1及び第2の領域により、前記第1の面のほぼ全域が覆われ、
前記第2の領域は、当該圧電振動子の振動時に、前記第1の領域より変位が大きい領域であり、
前記第2の調整膜は、エッチングによる質量低減の速度が前記第1の調整膜よりも速い材料からなり、
前記第1の電極、前記第2の電極、及び前記圧電膜は、屈曲振動する振動腕を形成し、
前記第2の領域は、前記振動腕の先端近傍の領域である、
圧電振動子。 - 請求項1〜6の何れか一項に記載の圧電振動子と、
前記圧電振動子を覆う蓋体と、
外部電極と、
を備える圧電振動装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014007088 | 2014-01-17 | ||
JP2014007088 | 2014-01-17 | ||
JP2014184557 | 2014-09-10 | ||
JP2014184557 | 2014-09-10 | ||
PCT/JP2015/050991 WO2015108125A1 (ja) | 2014-01-17 | 2015-01-15 | 圧電振動子及び圧電振動装置 |
Publications (2)
Publication Number | Publication Date |
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JPWO2015108125A1 JPWO2015108125A1 (ja) | 2017-03-23 |
JP6241684B2 true JP6241684B2 (ja) | 2017-12-06 |
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JP2015557877A Active JP6241684B2 (ja) | 2014-01-17 | 2015-01-15 | 圧電振動子及び圧電振動装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10333486B2 (ja) |
JP (1) | JP6241684B2 (ja) |
CN (1) | CN105874709B (ja) |
WO (1) | WO2015108125A1 (ja) |
Families Citing this family (7)
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JP6628212B2 (ja) * | 2015-11-24 | 2020-01-08 | 株式会社村田製作所 | 共振装置及びその製造方法 |
CN109155615B (zh) * | 2016-06-01 | 2022-08-26 | 株式会社村田制作所 | 谐振子以及谐振装置 |
FI127940B (en) | 2016-07-01 | 2019-05-31 | Teknologian Tutkimuskeskus Vtt Oy | Micromechanical resonator and method for trimming a micromechanical resonator |
JP6545772B2 (ja) * | 2017-01-03 | 2019-07-17 | ウィン セミコンダクターズ コーポレーション | 質量調整構造付きバルク音響波共振装置の製造方法 |
JP6829823B2 (ja) | 2017-09-19 | 2021-02-17 | 株式会社村田製作所 | 共振子及び共振装置 |
JP7001983B2 (ja) * | 2018-05-02 | 2022-02-07 | 株式会社村田製作所 | 共振子及び共振装置 |
WO2021053892A1 (ja) * | 2019-09-17 | 2021-03-25 | 株式会社村田製作所 | 圧電デバイスおよびその製造方法 |
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2015
- 2015-01-15 CN CN201580003676.9A patent/CN105874709B/zh active Active
- 2015-01-15 JP JP2015557877A patent/JP6241684B2/ja active Active
- 2015-01-15 WO PCT/JP2015/050991 patent/WO2015108125A1/ja active Application Filing
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2016
- 2016-07-11 US US15/206,647 patent/US10333486B2/en active Active
Also Published As
Publication number | Publication date |
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JPWO2015108125A1 (ja) | 2017-03-23 |
CN105874709A (zh) | 2016-08-17 |
US20160322953A1 (en) | 2016-11-03 |
CN105874709B (zh) | 2018-11-16 |
WO2015108125A1 (ja) | 2015-07-23 |
US10333486B2 (en) | 2019-06-25 |
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