JP6236198B2 - 単結晶シリコンウェハ - Google Patents
単結晶シリコンウェハ Download PDFInfo
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- JP6236198B2 JP6236198B2 JP2012030935A JP2012030935A JP6236198B2 JP 6236198 B2 JP6236198 B2 JP 6236198B2 JP 2012030935 A JP2012030935 A JP 2012030935A JP 2012030935 A JP2012030935 A JP 2012030935A JP 6236198 B2 JP6236198 B2 JP 6236198B2
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims description 14
- 239000000463 material Substances 0.000 claims description 136
- 239000002244 precipitate Substances 0.000 claims description 128
- 239000004065 semiconductor Substances 0.000 claims description 118
- 230000007547 defect Effects 0.000 claims description 85
- 229910052760 oxygen Inorganic materials 0.000 claims description 49
- 239000001301 oxygen Substances 0.000 claims description 49
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 47
- 238000005247 gettering Methods 0.000 claims description 14
- 229910001385 heavy metal Inorganic materials 0.000 claims description 13
- 230000003746 surface roughness Effects 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 description 135
- 239000010410 layer Substances 0.000 description 107
- 235000012431 wafers Nutrition 0.000 description 82
- 230000008569 process Effects 0.000 description 57
- 238000004519 manufacturing process Methods 0.000 description 49
- 238000002513 implantation Methods 0.000 description 29
- 230000015572 biosynthetic process Effects 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 19
- 230000003647 oxidation Effects 0.000 description 17
- 238000007254 oxidation reaction Methods 0.000 description 17
- 230000004048 modification Effects 0.000 description 15
- 238000012986 modification Methods 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 13
- 125000004429 atom Chemical group 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 125000004430 oxygen atom Chemical group O* 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 8
- 238000000227 grinding Methods 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000010297 mechanical methods and process Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000009279 wet oxidation reaction Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- ZUGYBSSWYZCQSV-UHFFFAOYSA-N indium(3+);phosphite Chemical compound [In+3].[O-]P([O-])[O-] ZUGYBSSWYZCQSV-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- -1 magnetic CZ Chemical compound 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Element Separation (AREA)
Description
−機械的作用によって、または、注入によって欠陥領域を形成する間に、半導体材料内に欠陥を形成する工程。
−その後、上記欠陥領域内に材料析出物を生成する間に、上記半導体材料の熱処理を行う工程。
−析出物を含まないか、または、1立方センチメートル当り104未満の材料析出物濃度で析出物をわずかに含む第1の領域と、
−1立方センチメートル当り107よりも大きな材料析出物濃度で材料析出物を含む第2の領域とを有している。
−機械的作用によって、または、注入によって欠陥領域を形成する間に、半導体材料内に欠陥を形成する工程。
−その後、上記欠陥領域内に材料析出物を生成する間に、上記半導体材料の熱処理を行う工程。
4 欠陥形成プロセス
5〜9 層領域
10、100 半導体ウェハ
10a〜10c 層領域
12a、12b 層
20 分離線
D0〜D7 層厚
OS 上面
US 下面
V1〜V21 空格子点
T、T1〜T5 温度
t、t1〜t5 プロセス時間
P1〜P15 析出物
S1 重金属原子
IC1〜IC4 集積回路
Tr1〜Tr4 トランジスタ
BE1、BE2 素子
100a〜100c 層領域
110 保護層
112 層
120 分離線
Claims (8)
- 単結晶シリコンウェハ(2、10、100)であって、
上面に形成され、析出物を含まないか、または、1立方センチメートル当り104未満の酸素析出物濃度で酸素析出物をわずかに含む第1の領域(10a1、100a1)と、
下面に形成され、1立方センチメートル当り107よりも高い酸素析出物濃度で酸素析出物(P1、P11)を含み、半導体材料ウェハの加工時に重金属イオンをゲッタリングすることに適した、第2の領域(10c、100c)と、を有し、
下面に機械的欠陥領域が形成され、この機械的欠陥領域の表面粗さが、1マイクロメートル以上であり、10マイクロメートルよりも小さいことを特徴とする、単結晶シリコンウェハ(2、10、100)。 - 上記第1の領域(10a1、100a1)は、少なくとも1μmの層厚(D7)を有することを特徴とする、請求項1に記載の単結晶シリコンウェハ(2、10、100)。
- 上記第1の領域(10a1、100a1)は、少なくとも10μmの層厚(D7)を有することを特徴とする、請求項1または2に記載の単結晶シリコンウェハ(2、10、100)。
- 上記第1の領域(10a1、100a1)は、少なくとも50μmの層厚(D7)を有することを特徴とする、請求項1または2に記載の単結晶シリコンウェハ(2、10、100)。
- 上記第2の領域(10c、100c)は、上記単結晶シリコンウェハ(2、10、100)の層厚(D1b、D5b)の少なくとも3分の1の層厚を有するか、または、少なくとも150マイクロメートルの層厚を有することを特徴とする、請求項1または2に記載の単結晶シリコンウェハ(2、10、100)。
- 上記第2の領域(10c、100c)は、上記単結晶シリコンウェハ(2、10、100)の層厚(D1b、D5b)の10分の1よりも薄いか、または、75マイクロメートルよりも薄いことを特徴とする、請求項1または2に記載の単結晶シリコンウェハ(2、10、100)。
- 上記第1の領域は、空格子点を含まないか、または、1立方センチメートル当り1012未満の空格子点密度または1011未満の空格子点密度で空格子点をわずかに含むことを特徴とする、請求項1または2に記載の単結晶シリコンウェハ(2、10、100)。
- 単結晶シリコンウェハ(2、10、100)は、1立方センチメートル当りの原子が5×1015未満の濃度または5×1016未満の濃度の炭素を含むことを特徴とする、請求項1または2に記載の単結晶シリコンウェハ(2、10、100)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007009281A DE102007009281B4 (de) | 2007-02-26 | 2007-02-26 | Verfahren zum Erzeugen von Materialausscheidungen und Halbleitermaterialscheibe sowie Halbleiterbauelemente |
DE102007009281.6 | 2007-02-26 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008042602A Division JP5134394B2 (ja) | 2007-02-26 | 2008-02-25 | 材料析出物生成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012138592A JP2012138592A (ja) | 2012-07-19 |
JP6236198B2 true JP6236198B2 (ja) | 2017-11-22 |
Family
ID=39645979
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008042602A Expired - Fee Related JP5134394B2 (ja) | 2007-02-26 | 2008-02-25 | 材料析出物生成方法 |
JP2012030935A Expired - Fee Related JP6236198B2 (ja) | 2007-02-26 | 2012-02-15 | 単結晶シリコンウェハ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008042602A Expired - Fee Related JP5134394B2 (ja) | 2007-02-26 | 2008-02-25 | 材料析出物生成方法 |
Country Status (2)
Country | Link |
---|---|
JP (2) | JP5134394B2 (ja) |
DE (1) | DE102007009281B4 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011054655A (ja) * | 2009-08-31 | 2011-03-17 | Sumco Corp | 高周波デバイス向けシリコンウェーハおよびその製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01184834A (ja) * | 1988-01-13 | 1989-07-24 | Nec Corp | 半導体装置の製造方法 |
DE3934140A1 (de) * | 1989-10-12 | 1991-04-18 | Wacker Chemitronic | Verfahren zur die ausbildung von getterfaehigen zentren induzierenden oberflaechenbehandlung von halbleiterscheiben und dadurch erhaeltliche beidseitig polierte scheiben |
JPH088263A (ja) * | 1994-06-20 | 1996-01-12 | Sumitomo Metal Ind Ltd | 半導体基板 |
US6451672B1 (en) * | 1999-04-15 | 2002-09-17 | Stmicroelectronics S.R.L. | Method for manufacturing electronic devices in semiconductor substrates provided with gettering sites |
KR100378184B1 (ko) * | 1999-11-13 | 2003-03-29 | 삼성전자주식회사 | 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러 |
JP2002043318A (ja) * | 2000-07-28 | 2002-02-08 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウエーハの製造方法 |
JP4106862B2 (ja) * | 2000-10-25 | 2008-06-25 | 信越半導体株式会社 | シリコンウェーハの製造方法 |
TW550681B (en) * | 2001-06-22 | 2003-09-01 | Memc Electronic Materials | Process for producing silicon on insulator structure having intrinsic gettering by ion implantation |
JP4154881B2 (ja) * | 2001-10-03 | 2008-09-24 | 株式会社Sumco | シリコン半導体基板の熱処理方法 |
KR100634421B1 (ko) * | 2004-12-02 | 2006-10-16 | 매그나칩 반도체 유한회사 | 반도체소자의 결함 제거방법 |
JP5188673B2 (ja) * | 2005-06-09 | 2013-04-24 | 株式会社Sumco | Igbt用のシリコンウェーハ及びその製造方法 |
DE102006002903A1 (de) * | 2006-01-20 | 2007-08-02 | Infineon Technologies Austria Ag | Verfahren zur Behandlung eines Sauerstoff enthaltenden Halbleiterwafers und Halbleiterbauelement |
-
2007
- 2007-02-26 DE DE102007009281A patent/DE102007009281B4/de not_active Expired - Fee Related
-
2008
- 2008-02-25 JP JP2008042602A patent/JP5134394B2/ja not_active Expired - Fee Related
-
2012
- 2012-02-15 JP JP2012030935A patent/JP6236198B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2008211216A (ja) | 2008-09-11 |
JP2012138592A (ja) | 2012-07-19 |
DE102007009281B4 (de) | 2013-03-14 |
JP5134394B2 (ja) | 2013-01-30 |
DE102007009281A1 (de) | 2008-08-28 |
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