JP6235999B2 - Euvリソグラフィ用の反射光学素子を製造する方法 - Google Patents
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
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- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 5
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- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- 229910039444 MoC Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 4
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
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- 239000010948 rhodium Substances 0.000 claims description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 4
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- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 2
- 239000010410 layer Substances 0.000 description 107
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- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
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- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 238000000869 ion-assisted deposition Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
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Description
上下に配置した30個〜60個のスタックからなる多層系を基板に被着するステップであり、各スタックは、作動波長での屈折率の実部が大きな材料からなる厚さdMLsを有する層と、作動波長での屈折率の実部が小さな材料からなる厚さdMLaを有する層とを有し、厚さ比がdMLa/(dMLa+dMLs)=ΓMLであるステップと、
1つ、2つ、3つ、4つ、又は5つの追加スタックを多層系に被着するステップであり、上記少なくとも1つの追加スタックは、作動波長での屈折率の実部が大きな材料からなる厚さdsを有する層と、作動波長での屈折率の実部の小さな材料からなる厚さdMLaを有する層とを有し、厚さ比がda/(da+ds)=Γであり、Γ≠ΓMLであるステップと
を含む方法により達成される。
Claims (10)
- 5nm〜20nmの範囲の作動波長で最大反射率を有するEUVリソグラフィ用の反射光学素子を製造する方法であって、
上下に配置した30個〜60個のスタックからなる多層系を基板に被着するステップであり、各スタックは、前記作動波長での屈折率の実部が大きな材料からなる厚さdMLsを有する層と、前記作動波長での屈折率の実部が小さな材料からなる厚さdMLaを有する層とを有し、厚さ比がdMLa/(dMLa+dMLs)=ΓMLであるステップと、
2つ、3つ、4つ、又は5つの追加スタックを前記多層系に被着するステップであり、前記追加スタックの最も上のスタックは、前記光学素子の最も上のスタックを形成し、前記少なくとも2つの追加スタックは、前記作動波長での屈折率の実部が大きな材料からなる厚さdsを有する層と、前記作動波長での屈折率の実部の小さな材料からなる厚さdaを有する層とを有し、厚さ比がda/(da+ds)=Γであり、Γ>1.2×ΓML又はΓ<0.8×ΓMLであるステップと
を含む方法。 - 請求項1に記載の方法において、前記少なくとも1つの追加スタックの少なくとも1つの層を、電子ビーム蒸着又は熱粒子でのマグネトロンスパッタリング又はイオンビームアシストコーティングにより被着する方法。
- 請求項1又は2に記載の方法において、前記少なくとも1つの追加スタックの少なくとも1つの層を、イオンビーム研磨しないか、又は層全体を貫通するようにエネルギーを設定したイオンビームで研磨する方法。
- 請求項1〜3のいずれか1項に記載の方法において、前記作動波長での屈折率の実部が大きな材料及び/又は前記作動波長での屈折率の実部が小さな材料として、前記多層系のスタックに選択される材料は、前記少なくとも1つの追加スタックにそれぞれ選択される材料と同じである方法。
- 請求項1〜4のいずれか1項に記載の方法において、前記多層系のスタック及び前記少なくとも1つの追加スタックの両方に関して、シリコンを前記作動波長での屈折率の実部が大きな材料として選択し、前記多層系のスタック及び前記少なくとも1つの追加スタックの両方に関して、モリブデンを前記作動波長での屈折率の実部が小さな材料として選択する方法。
- 請求項1〜4のいずれか1項に記載の方法において、前記作動波長での屈折率の実部が大きな材料及び/又は前記作動波長での屈折率の実部が小さな材料として、前記多層系のスタックに選択される材料は、前記少なくとも1つの追加スタックにそれぞれ選択される材料と異なる方法。
- 請求項1〜6のいずれか1項に記載の方法において、拡散バリアとしての付加層を、前記少なくとも1つの追加スタックおいて前記作動波長で前記屈折率の実部が小さな材料からなる層と前記作動波長で前記屈折率の実部が大きな材料からなる層との間に被着する方法。
- 5nm〜20nmの範囲の作動波長で最大反射率を有するEUVリソグラフィ用の反射光学素子を製造する方法であって、
上下に配置した30個〜60個のスタックからなる多層系を基板に被着するステップであり、各スタックは、前記作動波長での屈折率の実部が大きな材料からなる厚さd MLs を有する層と、前記作動波長での屈折率の実部が小さな材料からなる厚さd MLa を有する層とを有し、厚さ比がd MLa /(d MLa +d MLs )=Γ ML であるステップと、
2つ、3つ、4つ、又は5つの追加スタックを前記多層系に被着するステップであり、前記少なくとも2つの追加スタックは、前記作動波長での屈折率の実部が大きな材料からなる厚さd s を有する層と、前記作動波長での屈折率の実部の小さな材料からなる厚さd a を有する層とを有し、厚さ比がd a /(d a +d s )=Γであり、Γ>1.2×Γ ML 又はΓ<0.8×Γ ML であるステップと、
ケイ素、窒化ケイ素、酸化ケイ素、炭化ケイ素、ホウ素、炭化硼素、窒化ホウ素、ベリリウム、及び炭素からなる群からの材料からなる層を、前記追加スタックの最も上のスタックに被着して前記光学素子の最も上の層とする方法。 - 5nm〜20nmの範囲の作動波長で最大反射率を有するEUVリソグラフィ用の反射光学素子を製造する方法であって、
上下に配置した30個〜60個のスタックからなる多層系を基板に被着するステップであり、各スタックは、前記作動波長での屈折率の実部が大きな材料からなる厚さd MLs を有する層と、前記作動波長での屈折率の実部が小さな材料からなる厚さd MLa を有する層とを有し、厚さ比がd MLa /(d MLa +d MLs )=Γ ML であるステップと、
2つ、3つ、4つ、又は5つの追加スタックを前記多層系に被着するステップであり、前記少なくとも2つの追加スタックは、前記作動波長での屈折率の実部が大きな材料からなる厚さd s を有する層と、前記作動波長での屈折率の実部の小さな材料からなる厚さd a を有する層とを有し、厚さ比がd a /(d a +d s )=Γであり、Γ>1.2×Γ ML 又はΓ<0.8×Γ ML であるステップと、
ルテニウム、セリウム、イットリウム、ケイ化モリブデン、酸化イットリウム、硫化モリブデン、ジルコニウム、ニオブ、炭化モリブデン、酸化ジルコニウム、レニウム、及びロジウムからなる群からの材料からなる追加層を、前記追加スタックの最も上のスタックに被着して前記光学素子の最も上の層とする方法。 - 5nm〜20nmの範囲の作動波長で最大反射率を有するEUVリソグラフィ用の反射光学素子を製造する方法であって、
上下に配置した30個〜60個のスタックからなる多層系を基板に被着するステップであり、各スタックは、前記作動波長での屈折率の実部が大きな材料からなる厚さd MLs を有する層と、前記作動波長での屈折率の実部が小さな材料からなる厚さd MLa を有する層とを有し、厚さ比がd MLa /(d MLa +d MLs )=Γ ML であるステップと、
2つ、3つ、4つ、又は5つの追加スタックを前記多層系に被着するステップであり、前記少なくとも2つの追加スタックは、前記作動波長での屈折率の実部が大きな材料からなる厚さd s を有する層と、前記作動波長での屈折率の実部の小さな材料からなる厚さd a を有する層とを有し、厚さ比がd a /(d a +d s )=Γであり、Γ>1.2×Γ ML 又はΓ<0.8×Γ ML であるステップと、
ケイ素、窒化ケイ素、酸化ケイ素、炭化ケイ素、ホウ素、炭化硼素、窒化ホウ素、ベリリウム、及び炭素からなる群からの材料からなる層を、前記追加スタックの最も上のスタックに被着するステップと
ルテニウム、セリウム、イットリウム、ケイ化モリブデン、酸化イットリウム、硫化モリブデン、ジルコニウム、ニオブ、炭化モリブデン、酸化ジルコニウム、レニウム、及びロジウムからなる群からの材料からなる追加層を、前記ケイ素、窒化ケイ素、酸化ケイ素、炭化ケイ素、ホウ素、炭化硼素、窒化ホウ素、ベリリウム、及び炭素からなる群からの材料からなる層の上に被着して前記光学素子の最も上の層とする方法。
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DE102011077983A DE102011077983A1 (de) | 2011-06-22 | 2011-06-22 | Verfahren zur Herstellung eines reflektiven optischen Elements für die EUV-Lithographie |
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