JP5314193B2 - 反射光学素子及びその生産方法 - Google Patents
反射光学素子及びその生産方法 Download PDFInfo
- Publication number
- JP5314193B2 JP5314193B2 JP2012525093A JP2012525093A JP5314193B2 JP 5314193 B2 JP5314193 B2 JP 5314193B2 JP 2012525093 A JP2012525093 A JP 2012525093A JP 2012525093 A JP2012525093 A JP 2012525093A JP 5314193 B2 JP5314193 B2 JP 5314193B2
- Authority
- JP
- Japan
- Prior art keywords
- optical element
- reflective optical
- silicon
- top layer
- reflective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
11 ビーム成形システム
12 EUV放射源
13a モノクロメーター
13b コリメーター
14 照明システム
15 第1ミラー
16 第2ミラー
17 マスク
18 第3ミラー
19 第4ミラー
20 投影システム
21 ウエハー
22 クリーニングヘッド
23 クリーニングヘッド
50 反射光学素子
51 多層システム
52 基材
53 層の対
54 吸収体
55 スペーサー
56 保護層
57 障壁層
58 中間層
59 反射面
101−105 プロセスステップ
111−115 プロセスステップ
Claims (16)
- 最上層を備えた反射面を有する、極端紫外線及び軟X線の波長範囲のための反射光学素子であって、前記最上層(56)が、炭素・ケイ素結合及び/又はケイ素・酸素結合を有し且つ当該反射光学素子(50)の表面(59)上に凝集層を形成する一つ以上の有機ケイ素化合物を含む、反射光学素子。
- 前記最上層(56)が一つ以上のシロキサン及び/又はポリシロキサンを含む、請求項1に記載の反射光学素子。
- 前記最上層(56)が0.1nm〜2.5nmの範囲の厚さを有する、請求項1又は2に記載の反射光学素子。
- 前記最上層(56)が、この最上層(56)を有しない状態の最大反射率と比較されたこの最上層(56)を有する状態の最大反射率の減少が2%未満であるような厚さを有する、請求項1〜3のいずれか1項に記載の反射光学素子。
- 前記反射面(59)が多層システム(51)を含む、請求項1〜4のいずれか1項に記載の反射光学素子。
- 前記反射面(59)が、極端紫外線及び軟X線の波長範囲の波長において屈折率の異なる実部を有する少なくとも二つの材料の交互層(54、55)に基づく多層システム(51)を含み、該多層システム(51)が極端紫外線及び軟X線の波長範囲の波長において良好な反射率を有するように設計される、請求項1〜5のいずれか1項に記載の反射光学素子。
- 前記多層システム(51)がケイ素とモリブデンとの交互層(54、55)に基づく、請求項5又は6に記載の反射光学素子。
- 前記最上層(56)の下方にルテニウム(58)及び/又は窒化ケイ素(57)の層を含む、請求項1〜7のいずれか1項に記載の反射光学素子。
- 請求項1〜8のいずれか1項に記載の反射光学素子を備えたEUVリソグラフィー装置。
- 請求項1〜8のいずれか1項に記載の反射光学素子を備えた、EUVリソグラフィー装置のための照明システム。
- 請求項1〜8のいずれか1項に記載の反射光学素子を備えた、EUVリソグラフィー装置のための投影システム。
- 請求項1〜8のいずれか1項に記載の反射光学素子を生産する方法において、
反射面を備えた反射光学素子をチャンバー内に導入するステップと、
炭素・ケイ素結合及び/又はケイ素・酸素結合を有する一つ以上の有機ケイ素化合物を含有するガスを導入するステップと、
電磁放射及び/又は荷電粒子を前記反射面に衝突させるステップと
を含む、方法。 - コーティングチャンバーが前記チャンバーとして使用される、請求項12に記載の方法。
- EUVリソグラフィー装置のチャンバーが前記チャンバーとして使用される、請求項12又は13に記載の方法。
- 極端紫外線照射、軟X線照射、又は電子ビームが使用される、請求項12〜14のいずれか1項に記載の方法。
- シロキサン含有ガスが導入される、請求項12〜15のいずれか1項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009043824.6 | 2009-08-21 | ||
DE102009043824A DE102009043824A1 (de) | 2009-08-21 | 2009-08-21 | Reflektives optisches Element und Verfahren zu dessen Herstellung |
PCT/EP2010/005121 WO2011020623A1 (en) | 2009-08-21 | 2010-08-20 | A reflective optical element and method of producing it |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013502705A JP2013502705A (ja) | 2013-01-24 |
JP5314193B2 true JP5314193B2 (ja) | 2013-10-16 |
Family
ID=42799658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012525093A Expired - Fee Related JP5314193B2 (ja) | 2009-08-21 | 2010-08-20 | 反射光学素子及びその生産方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120200913A1 (ja) |
EP (1) | EP2467741B1 (ja) |
JP (1) | JP5314193B2 (ja) |
DE (1) | DE102009043824A1 (ja) |
WO (1) | WO2011020623A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009045170A1 (de) * | 2009-09-30 | 2011-04-07 | Carl Zeiss Smt Gmbh | Reflektives optisches Element und Verfahren zum Betrieb einer EUV-Lithographievorrichtung |
JP2012014152A (ja) * | 2010-06-02 | 2012-01-19 | Canon Inc | X線導波路 |
US20140158914A1 (en) * | 2012-12-11 | 2014-06-12 | Sandia Corporation | Optical component with blocking surface and method thereof |
DE102013203746A1 (de) * | 2013-03-05 | 2013-12-19 | Carl Zeiss Smt Gmbh | Reflektives optisches Element für die EUV-Lithographie |
DE102013222330A1 (de) | 2013-11-04 | 2015-05-07 | Carl Zeiss Smt Gmbh | Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
DE102015207140A1 (de) * | 2015-04-20 | 2016-10-20 | Carl Zeiss Smt Gmbh | Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
DE102018211234A1 (de) * | 2018-07-06 | 2020-01-09 | Carl Zeiss Smt Gmbh | Substrat für ein reflektives optisches Element |
DE102021200130A1 (de) * | 2021-01-09 | 2022-07-14 | Carl Zeiss Smt Gmbh | Verfahren zum Reinigen einer Oberfläche eines Bauteils für ein EUV-Lithographiesystem |
DE102021212874A1 (de) | 2021-11-16 | 2023-05-17 | Carl Zeiss Smt Gmbh | Verfahren zum Abscheiden einer Deckschicht, EUV-Lithographiesystem und optisches Element |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50128535A (ja) * | 1974-03-29 | 1975-10-09 | ||
SE435297B (sv) * | 1975-08-22 | 1984-09-17 | Bosch Gmbh Robert | Optiska reflektorer framstellda genom att reflektorytan belegges med ett skyddsskikt |
JPH1120034A (ja) | 1997-06-30 | 1999-01-26 | Nikon Corp | 光学部材の製造方法、光学部材及びその光学部材を用いた投影露光装置 |
DE29812559U1 (de) * | 1998-07-15 | 1999-11-25 | Alanod Al Veredlung Gmbh | Verbundmaterial für Reflektoren |
EP1154289A1 (de) * | 2000-05-09 | 2001-11-14 | Alcan Technology & Management AG | Reflektor |
TW548524B (en) * | 2000-09-04 | 2003-08-21 | Asm Lithography Bv | Lithographic projection apparatus, device manufacturing method and device manufactured thereby |
US6664554B2 (en) * | 2001-01-03 | 2003-12-16 | Euv Llc | Self-cleaning optic for extreme ultraviolet lithography |
JP3908036B2 (ja) * | 2002-01-10 | 2007-04-25 | 株式会社小糸製作所 | 反射鏡製造方法及び反射鏡製造装置 |
JP4320999B2 (ja) * | 2002-02-04 | 2009-08-26 | 株式会社ニコン | X線発生装置及び露光装置 |
JP2005156201A (ja) * | 2003-11-21 | 2005-06-16 | Canon Inc | X線全反射ミラーおよびx線露光装置 |
JP2005244015A (ja) | 2004-02-27 | 2005-09-08 | Nikon Corp | 露光装置、露光装置の光学素子の光洗浄方法、及び微細パターンを有するデバイスの製造方法 |
US7355672B2 (en) * | 2004-10-04 | 2008-04-08 | Asml Netherlands B.V. | Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus |
US7750326B2 (en) * | 2005-06-13 | 2010-07-06 | Asml Netherlands B.V. | Lithographic apparatus and cleaning method therefor |
US8216679B2 (en) * | 2005-07-27 | 2012-07-10 | Exatec Llc | Glazing system for vehicle tops and windows |
WO2007078011A1 (ja) * | 2006-01-06 | 2007-07-12 | Nec Corporation | 多層配線の製造方法と多層配線構造 |
DE102006044591A1 (de) * | 2006-09-19 | 2008-04-03 | Carl Zeiss Smt Ag | Optische Anordnung, insbesondere Projektionsbelichtungsanlage für die EUV-Lithographie, sowie reflektives optisches Element mit verminderter Kontamination |
US7875863B2 (en) * | 2006-12-22 | 2011-01-25 | Asml Netherlands B.V. | Illumination system, lithographic apparatus, mirror, method of removing contamination from a mirror and device manufacturing method |
JP2008182135A (ja) * | 2007-01-26 | 2008-08-07 | Nikon Corp | 露光装置、光学機器、露光方法及びデバイス製造方法 |
TWI427334B (zh) * | 2007-02-05 | 2014-02-21 | Zeiss Carl Smt Gmbh | Euv蝕刻裝置反射光學元件 |
JP5099793B2 (ja) * | 2007-11-06 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 光学面から汚染層を除去するための方法、洗浄ガスを生成するための方法、ならびに対応する洗浄および洗浄ガス生成の構造 |
-
2009
- 2009-08-21 DE DE102009043824A patent/DE102009043824A1/de not_active Withdrawn
-
2010
- 2010-08-20 EP EP10752519.8A patent/EP2467741B1/en not_active Not-in-force
- 2010-08-20 JP JP2012525093A patent/JP5314193B2/ja not_active Expired - Fee Related
- 2010-08-20 WO PCT/EP2010/005121 patent/WO2011020623A1/en active Application Filing
-
2012
- 2012-02-17 US US13/399,313 patent/US20120200913A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP2467741A1 (en) | 2012-06-27 |
JP2013502705A (ja) | 2013-01-24 |
WO2011020623A1 (en) | 2011-02-24 |
EP2467741B1 (en) | 2015-05-27 |
US20120200913A1 (en) | 2012-08-09 |
DE102009043824A1 (de) | 2011-02-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5314193B2 (ja) | 反射光学素子及びその生産方法 | |
US9880476B2 (en) | Method for producing a capping layer composed of silicon oxide on an EUV mirror, EUV mirror, and EUV lithography apparatus | |
JP5349697B2 (ja) | 反射光学素子及びeuvリソグラフィ装置を作動させる方法 | |
EP2710415B1 (en) | Reflective optical element and optical system for euv lithography | |
TWI286678B (en) | Method for the removal of deposition on an optical element, method for the protection of an optical element, semiconductor manufacturing method, apparatus including an optical element, and lithographic apparatus | |
JP6235999B2 (ja) | Euvリソグラフィ用の反射光学素子を製造する方法 | |
US20100071720A1 (en) | Method and system for removing contaminants from a surface | |
JP2004517484A (ja) | 極紫外線リソグラフィー用の自己浄化光学装置 | |
US20220179329A1 (en) | Optical element and euv lithographic system | |
US9229331B2 (en) | EUV mirror comprising an oxynitride capping layer having a stable composition, EUV lithography apparatus, and operating method | |
WO2008148516A2 (en) | Reflective optical element and method for operating an euv lithography device | |
CN111886547A (zh) | 用于euv光刻的光学配置 | |
EP1944652A1 (en) | A method for operating a euv lithography apparatus, and a euv lithography apparatus | |
US20230076667A1 (en) | Optical element, euv lithography system, and method for forming nanoparticles | |
Khopkar et al. | Dependence of contamination rates on key parameters in EUV optics |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130520 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130604 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130704 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5314193 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |