JP6235480B2 - 放射線検出器 - Google Patents
放射線検出器 Download PDFInfo
- Publication number
- JP6235480B2 JP6235480B2 JP2014546707A JP2014546707A JP6235480B2 JP 6235480 B2 JP6235480 B2 JP 6235480B2 JP 2014546707 A JP2014546707 A JP 2014546707A JP 2014546707 A JP2014546707 A JP 2014546707A JP 6235480 B2 JP6235480 B2 JP 6235480B2
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- JP
- Japan
- Prior art keywords
- cathode
- segment
- anode
- segments
- radiation detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005855 radiation Effects 0.000 title claims description 73
- 239000004065 semiconductor Substances 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 20
- 238000001514 detection method Methods 0.000 claims description 17
- 230000000737 periodic effect Effects 0.000 claims description 12
- 230000026954 response to X-ray Effects 0.000 claims description 4
- 230000031264 response to gamma radiation Effects 0.000 claims description 4
- 230000005684 electric field Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 5
- 229910004613 CdTe Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000005251 gamma ray Effects 0.000 description 3
- 230000011218 segmentation Effects 0.000 description 3
- 229910004611 CdZnTe Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910004262 HgTe Inorganic materials 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 238000012217 deletion Methods 0.000 description 2
- 230000037430 deletion Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
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- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
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- 206010067623 Radiation interaction Diseases 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000000701 chemical imaging Methods 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1892—Direct radiation image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
- H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161569833P | 2011-12-13 | 2011-12-13 | |
| US61/569,833 | 2011-12-13 | ||
| PCT/IB2012/057212 WO2013088352A2 (en) | 2011-12-13 | 2012-12-12 | Radiation detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015507841A JP2015507841A (ja) | 2015-03-12 |
| JP6235480B2 true JP6235480B2 (ja) | 2017-11-22 |
Family
ID=47624380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014546707A Expired - Fee Related JP6235480B2 (ja) | 2011-12-13 | 2012-12-12 | 放射線検出器 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20140319363A1 (enExample) |
| EP (1) | EP2748639B1 (enExample) |
| JP (1) | JP6235480B2 (enExample) |
| CN (1) | CN104024889A (enExample) |
| BR (1) | BR112014014064A2 (enExample) |
| IN (1) | IN2014CN04758A (enExample) |
| RU (1) | RU2014128555A (enExample) |
| WO (1) | WO2013088352A2 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6186205B2 (ja) * | 2013-08-15 | 2017-08-23 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
| EP2876465A1 (en) * | 2013-11-26 | 2015-05-27 | Danmarks Tekniske Universitet (DTU) | X-ray and gamma-ray radiation detector |
| AT515501B1 (de) * | 2014-02-18 | 2016-01-15 | Griesmayer Erich Dr | Verfahren und Vorrichtung zum Erfassen und zum Unterscheiden von Elementarteilchen |
| DE102014207324A1 (de) * | 2014-04-16 | 2015-10-22 | Siemens Aktiengesellschaft | Direktkonvertierender Röntgenstrahlungsdetektor und CT-System |
| EP3161522B1 (en) * | 2014-12-05 | 2018-02-28 | Koninklijke Philips N.V. | X-ray detector device for inclined angle x-ray radiation |
| RU2705717C2 (ru) * | 2014-12-17 | 2019-11-11 | Конинклейке Филипс Н.В. | Детектор и способ для обнаружения ионизирующего излучения |
| JP2018505565A (ja) * | 2014-12-19 | 2018-02-22 | ジーレイ スイッツァーランド エスアー | モノリシックcmos集積ピクセル検出器ならびに様々な用途を含む粒子検出および撮像のためのシステムおよび方法 |
| US9482764B1 (en) * | 2015-05-28 | 2016-11-01 | General Electric Company | Systems and methods for charge-sharing identification and correction using a single pixel |
| JP6808317B2 (ja) * | 2015-12-04 | 2021-01-06 | キヤノン株式会社 | 撮像装置、および、撮像システム |
| JP6808316B2 (ja) * | 2015-12-04 | 2021-01-06 | キヤノン株式会社 | 撮像装置、および、撮像システム |
| CN105540526B (zh) * | 2015-12-29 | 2017-03-15 | 中国科学院电子学研究所 | 单片复合敏感电极的制造方法、基于其的敏感器件 |
| CN108885273B (zh) * | 2016-03-23 | 2023-09-08 | 皇家飞利浦有限公司 | 具有整体像素边界的纳米材料成像探测器 |
| CN105974460B (zh) * | 2016-05-11 | 2018-12-07 | 天津大学 | 可重构型x射线能谱探测方法及探测器像素单元结构 |
| CN106324649B (zh) * | 2016-08-31 | 2023-09-15 | 同方威视技术股份有限公司 | 半导体探测器 |
| EP3306353A1 (en) * | 2016-10-07 | 2018-04-11 | Danmarks Tekniske Universitet | Radiation detector |
| GB201703196D0 (en) | 2017-02-28 | 2017-04-12 | Univ Of Sussex | X-ray and gammay-ray photodiode |
| EP3422051A1 (en) * | 2017-06-28 | 2019-01-02 | Koninklijke Philips N.V. | Direct conversion radiation detection |
| EP3658959A4 (en) * | 2017-07-26 | 2020-12-23 | Shenzhen Xpectvision Technology Co., Ltd. | RADIATION DETECTOR WITH INTEGRATED DEPOLARIZATION DEVICE |
| EP3658960B1 (en) * | 2017-07-26 | 2022-09-07 | Shenzhen Xpectvision Technology Co., Ltd. | X-ray detector capable of managing charge sharing at its periphery |
| CN108267777B (zh) * | 2018-02-26 | 2023-07-07 | 张岚 | 面阵列像素探测器及中低能射线源的定向方法 |
| WO2021168693A1 (en) * | 2020-02-26 | 2021-09-02 | Shenzhen Xpectvision Technology Co., Ltd. | Radiation detector |
| US11835666B1 (en) * | 2020-07-31 | 2023-12-05 | Redlen Technologies, Inc. | Photon counting computed tomography detector with improved count rate stability and method of operating same |
| US11953452B2 (en) * | 2021-03-01 | 2024-04-09 | Redlen Technologies, Inc. | Ionizing radiation detector with reduced street width and improved count rate stability |
| JP2023055071A (ja) * | 2021-10-05 | 2023-04-17 | キヤノンメディカルシステムズ株式会社 | 検出器モジュール、x線コンピュータ断層撮影装置及びx線検出装置 |
| CN120358815B (zh) * | 2025-06-19 | 2025-10-03 | 湘潭大学 | 一种带有肖特基漂浮电极的小像素阵列探测器 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5677539A (en) * | 1995-10-13 | 1997-10-14 | Digirad | Semiconductor radiation detector with enhanced charge collection |
| US6046454A (en) | 1995-10-13 | 2000-04-04 | Digirad Corporation | Semiconductor radiation detector with enhanced charge collection |
| DE19616545B4 (de) * | 1996-04-25 | 2006-05-11 | Siemens Ag | Schneller Strahlungsdetektor |
| SE514472C2 (sv) * | 1999-04-14 | 2001-02-26 | Xcounter Ab | Strålningsdetektor och en anordning för användning vid radiografi |
| JP3900992B2 (ja) * | 2002-04-02 | 2007-04-04 | 株式会社日立製作所 | 放射線検出器及び放射線検査装置 |
| US7145986B2 (en) * | 2004-05-04 | 2006-12-05 | General Electric Company | Solid state X-ray detector with improved spatial resolution |
| JP4881071B2 (ja) * | 2006-05-30 | 2012-02-22 | 株式会社日立製作所 | 放射線検出器、及びこれを搭載した放射線撮像装置 |
| DE102007055676A1 (de) * | 2007-11-21 | 2009-06-04 | Siemens Ag | Strahlungswandler, Strahlungsdetektor und Strahlungserfassungseinrichtung |
| JP5155808B2 (ja) * | 2008-10-08 | 2013-03-06 | 株式会社日立製作所 | 半導体放射線検出器および核医学診断装置 |
| WO2010073189A1 (en) * | 2008-12-22 | 2010-07-01 | Koninklijke Philips Electronics N.V. | Radiation detector with improved charge collection and minimized leakage currents |
| NL1037989C2 (en) * | 2010-05-28 | 2011-11-29 | Photonis France Sas | An electron multiplying structure for use in a vacuum tube using electron multiplying as well as a vacuum tube using electron multiplying provided with such an electron multiplying structure. |
-
2012
- 2012-12-12 IN IN4758CHN2014 patent/IN2014CN04758A/en unknown
- 2012-12-12 RU RU2014128555A patent/RU2014128555A/ru not_active Application Discontinuation
- 2012-12-12 JP JP2014546707A patent/JP6235480B2/ja not_active Expired - Fee Related
- 2012-12-12 CN CN201280061619.2A patent/CN104024889A/zh active Pending
- 2012-12-12 BR BR112014014064A patent/BR112014014064A2/pt not_active IP Right Cessation
- 2012-12-12 US US14/362,139 patent/US20140319363A1/en not_active Abandoned
- 2012-12-12 WO PCT/IB2012/057212 patent/WO2013088352A2/en not_active Ceased
- 2012-12-12 EP EP12819019.6A patent/EP2748639B1/en not_active Not-in-force
Also Published As
| Publication number | Publication date |
|---|---|
| BR112014014064A8 (pt) | 2017-06-13 |
| RU2014128555A (ru) | 2016-02-10 |
| JP2015507841A (ja) | 2015-03-12 |
| EP2748639B1 (en) | 2019-07-17 |
| BR112014014064A2 (pt) | 2017-06-13 |
| IN2014CN04758A (enExample) | 2015-09-18 |
| EP2748639A2 (en) | 2014-07-02 |
| WO2013088352A3 (en) | 2013-08-08 |
| US20140319363A1 (en) | 2014-10-30 |
| CN104024889A (zh) | 2014-09-03 |
| WO2013088352A2 (en) | 2013-06-20 |
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