CN104024889A - 辐射探测器 - Google Patents

辐射探测器 Download PDF

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Publication number
CN104024889A
CN104024889A CN201280061619.2A CN201280061619A CN104024889A CN 104024889 A CN104024889 A CN 104024889A CN 201280061619 A CN201280061619 A CN 201280061619A CN 104024889 A CN104024889 A CN 104024889A
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CN
China
Prior art keywords
cathode
segment
anode
segments
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201280061619.2A
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English (en)
Chinese (zh)
Inventor
K·J·恩格尔
C·赫尔曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
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Koninklijke Philips Electronics NV
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Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of CN104024889A publication Critical patent/CN104024889A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1892—Direct radiation image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN201280061619.2A 2011-12-13 2012-12-12 辐射探测器 Pending CN104024889A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161569833P 2011-12-13 2011-12-13
US61/569,833 2011-12-13
PCT/IB2012/057212 WO2013088352A2 (en) 2011-12-13 2012-12-12 Radiation detector

Publications (1)

Publication Number Publication Date
CN104024889A true CN104024889A (zh) 2014-09-03

Family

ID=47624380

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280061619.2A Pending CN104024889A (zh) 2011-12-13 2012-12-12 辐射探测器

Country Status (8)

Country Link
US (1) US20140319363A1 (enExample)
EP (1) EP2748639B1 (enExample)
JP (1) JP6235480B2 (enExample)
CN (1) CN104024889A (enExample)
BR (1) BR112014014064A2 (enExample)
IN (1) IN2014CN04758A (enExample)
RU (1) RU2014128555A (enExample)
WO (1) WO2013088352A2 (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105540526A (zh) * 2015-12-29 2016-05-04 中国科学院电子学研究所 单片复合敏感电极、其制造方法、基于其的敏感器件
CN105974460A (zh) * 2016-05-11 2016-09-28 天津大学 可重构型x射线能谱探测方法及探测器像素单元结构
CN106324649A (zh) * 2016-08-31 2017-01-11 同方威视技术股份有限公司 半导体探测器
CN107110987A (zh) * 2014-12-17 2017-08-29 皇家飞利浦有限公司 用于探测电离辐射的探测器和方法
CN107667301A (zh) * 2015-05-28 2018-02-06 通用电气公司 用于使用单个像素进行电荷共享识别和校正的系统和方法
CN108267777A (zh) * 2018-02-26 2018-07-10 奕瑞新材料科技（太仓）有限公司 面阵列像素探测器及中低能射线源的定向方法
WO2019019054A1 (en) * 2017-07-26 2019-01-31 Shenzhen Xpectvision Technology Co., Ltd. RADIATION DETECTOR WITH INTEGRATED DEPOLARIZATION DEVICE
CN110869812A (zh) * 2017-06-28 2020-03-06 皇家飞利浦有限公司 直接转换辐射探测
WO2021168693A1 (en) * 2020-02-26 2021-09-02 Shenzhen Xpectvision Technology Co., Ltd. Radiation detector
CN120358815A (zh) * 2025-06-19 2025-07-22 湘潭大学 一种带有肖特基漂浮电极的小像素阵列探测器

Families Citing this family (15)

* Cited by examiner, † Cited by third party
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JP6186205B2 (ja) * 2013-08-15 2017-08-23 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
EP2876465A1 (en) * 2013-11-26 2015-05-27 Danmarks Tekniske Universitet (DTU) X-ray and gamma-ray radiation detector
AT515501B1 (de) * 2014-02-18 2016-01-15 Griesmayer Erich Dr Verfahren und Vorrichtung zum Erfassen und zum Unterscheiden von Elementarteilchen
DE102014207324A1 (de) * 2014-04-16 2015-10-22 Siemens Aktiengesellschaft Direktkonvertierender Röntgenstrahlungsdetektor und CT-System
US10172577B2 (en) * 2014-12-05 2019-01-08 Koninklijke Philips N.V. X-ray detector device for inclined angle X-ray radiation
WO2016097850A1 (en) * 2014-12-19 2016-06-23 G-Ray Switzerland Sa Monolithic cmos integrated pixel detector, and systems and methods for particle detection and imaging including various applications
JP6808317B2 (ja) * 2015-12-04 2021-01-06 キヤノン株式会社 撮像装置、および、撮像システム
JP6808316B2 (ja) 2015-12-04 2021-01-06 キヤノン株式会社 撮像装置、および、撮像システム
CN108885273B (zh) * 2016-03-23 2023-09-08 皇家飞利浦有限公司 具有整体像素边界的纳米材料成像探测器
EP3306353A1 (en) * 2016-10-07 2018-04-11 Danmarks Tekniske Universitet Radiation detector
GB201703196D0 (en) 2017-02-28 2017-04-12 Univ Of Sussex X-ray and gammay-ray photodiode
WO2019019038A1 (en) * 2017-07-26 2019-01-31 Shenzhen Xpectvision Technology Co., Ltd. X-RAY DETECTOR CAPABLE OF MANAGING LOAD SHARING AT ITS PERIPHERY
US11835666B1 (en) * 2020-07-31 2023-12-05 Redlen Technologies, Inc. Photon counting computed tomography detector with improved count rate stability and method of operating same
US11953452B2 (en) * 2021-03-01 2024-04-09 Redlen Technologies, Inc. Ionizing radiation detector with reduced street width and improved count rate stability
JP2023055071A (ja) * 2021-10-05 2023-04-17 キヤノンメディカルシステムズ株式会社 検出器モジュール、ｘ線コンピュータ断層撮影装置及びｘ線検出装置

Citations (5)

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US5677539A (en) * 1995-10-13 1997-10-14 Digirad Semiconductor radiation detector with enhanced charge collection
US6385282B1 (en) * 1999-04-14 2002-05-07 Xcounter Ab Radiation detector and an apparatus for use in radiography
DE102007055676A1 (de) * 2007-11-21 2009-06-04 Siemens Ag Strahlungswandler, Strahlungsdetektor und Strahlungserfassungseinrichtung
WO2010073189A1 (en) * 2008-12-22 2010-07-01 Koninklijke Philips Electronics N.V. Radiation detector with improved charge collection and minimized leakage currents
CN103026449A (zh) * 2010-05-28 2013-04-03 福托尼斯法国公司 用于使用电子倍增的真空管的电子倍增结构以及具有该电子倍增结构的使用电子倍增的真空管

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US6046454A (en) 1995-10-13 2000-04-04 Digirad Corporation Semiconductor radiation detector with enhanced charge collection
DE19616545B4 (de) * 1996-04-25 2006-05-11 Siemens Ag Schneller Strahlungsdetektor
JP3900992B2 (ja) * 2002-04-02 2007-04-04 株式会社日立製作所 放射線検出器及び放射線検査装置
US7145986B2 (en) * 2004-05-04 2006-12-05 General Electric Company Solid state X-ray detector with improved spatial resolution
JP4881071B2 (ja) * 2006-05-30 2012-02-22 株式会社日立製作所 放射線検出器、及びこれを搭載した放射線撮像装置
JP5155808B2 (ja) * 2008-10-08 2013-03-06 株式会社日立製作所 半導体放射線検出器および核医学診断装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5677539A (en) * 1995-10-13 1997-10-14 Digirad Semiconductor radiation detector with enhanced charge collection
US6385282B1 (en) * 1999-04-14 2002-05-07 Xcounter Ab Radiation detector and an apparatus for use in radiography
DE102007055676A1 (de) * 2007-11-21 2009-06-04 Siemens Ag Strahlungswandler, Strahlungsdetektor und Strahlungserfassungseinrichtung
WO2010073189A1 (en) * 2008-12-22 2010-07-01 Koninklijke Philips Electronics N.V. Radiation detector with improved charge collection and minimized leakage currents
CN103026449A (zh) * 2010-05-28 2013-04-03 福托尼斯法国公司 用于使用电子倍增的真空管的电子倍增结构以及具有该电子倍增结构的使用电子倍增的真空管

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107110987B (zh) * 2014-12-17 2019-11-01 皇家飞利浦有限公司 用于探测电离辐射的探测器和方法
CN107110987A (zh) * 2014-12-17 2017-08-29 皇家飞利浦有限公司 用于探测电离辐射的探测器和方法
CN107667301A (zh) * 2015-05-28 2018-02-06 通用电气公司 用于使用单个像素进行电荷共享识别和校正的系统和方法
CN105540526B (zh) * 2015-12-29 2017-03-15 中国科学院电子学研究所 单片复合敏感电极的制造方法、基于其的敏感器件
CN105540526A (zh) * 2015-12-29 2016-05-04 中国科学院电子学研究所 单片复合敏感电极、其制造方法、基于其的敏感器件
CN105974460A (zh) * 2016-05-11 2016-09-28 天津大学 可重构型x射线能谱探测方法及探测器像素单元结构
CN105974460B (zh) * 2016-05-11 2018-12-07 天津大学 可重构型x射线能谱探测方法及探测器像素单元结构
CN106324649A (zh) * 2016-08-31 2017-01-11 同方威视技术股份有限公司 半导体探测器
CN106324649B (zh) * 2016-08-31 2023-09-15 同方威视技术股份有限公司 半导体探测器
CN110869812A (zh) * 2017-06-28 2020-03-06 皇家飞利浦有限公司 直接转换辐射探测
CN110869812B (zh) * 2017-06-28 2024-01-02 皇家飞利浦有限公司 直接转换辐射探测
WO2019019054A1 (en) * 2017-07-26 2019-01-31 Shenzhen Xpectvision Technology Co., Ltd. RADIATION DETECTOR WITH INTEGRATED DEPOLARIZATION DEVICE
US10976453B2 (en) 2017-07-26 2021-04-13 Shenzhen Xpectvision Technology Co., Ltd. Radiation detector with built-in depolarization device
CN108267777A (zh) * 2018-02-26 2018-07-10 奕瑞新材料科技（太仓）有限公司 面阵列像素探测器及中低能射线源的定向方法
WO2021168693A1 (en) * 2020-02-26 2021-09-02 Shenzhen Xpectvision Technology Co., Ltd. Radiation detector
CN114902081A (zh) * 2020-02-26 2022-08-12 深圳帧观德芯科技有限公司 辐射检测器
EP4111238A4 (en) * 2020-02-26 2023-12-06 Shenzhen Xpectvision Technology Co., Ltd. Radiation detector
TWI828968B (zh) * 2020-02-26 2024-01-11 大陸商深圳幀觀德芯科技有限公司 輻射檢測器及其製造方法
CN120358815A (zh) * 2025-06-19 2025-07-22 湘潭大学 一种带有肖特基漂浮电极的小像素阵列探测器
CN120358815B (zh) * 2025-06-19 2025-10-03 湘潭大学 一种带有肖特基漂浮电极的小像素阵列探测器

Also Published As

Publication number Publication date
EP2748639A2 (en) 2014-07-02
EP2748639B1 (en) 2019-07-17
WO2013088352A2 (en) 2013-06-20
US20140319363A1 (en) 2014-10-30
BR112014014064A8 (pt) 2017-06-13
RU2014128555A (ru) 2016-02-10
WO2013088352A3 (en) 2013-08-08
IN2014CN04758A (enExample) 2015-09-18
JP6235480B2 (ja) 2017-11-22
BR112014014064A2 (pt) 2017-06-13
JP2015507841A (ja) 2015-03-12

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