IN2014CN04758A - - Google Patents
Info
- Publication number
- IN2014CN04758A IN2014CN04758A IN4758CHN2014A IN2014CN04758A IN 2014CN04758 A IN2014CN04758 A IN 2014CN04758A IN 4758CHN2014 A IN4758CHN2014 A IN 4758CHN2014A IN 2014CN04758 A IN2014CN04758 A IN 2014CN04758A
- Authority
- IN
- India
- Prior art keywords
- segments
- anode
- cathode
- radiation
- electrode
- Prior art date
Links
- 230000005855 radiation Effects 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 3
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1892—Direct radiation image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
- H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161569833P | 2011-12-13 | 2011-12-13 | |
| PCT/IB2012/057212 WO2013088352A2 (en) | 2011-12-13 | 2012-12-12 | Radiation detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014CN04758A true IN2014CN04758A (enExample) | 2015-09-18 |
Family
ID=47624380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN4758CHN2014 IN2014CN04758A (enExample) | 2011-12-13 | 2012-12-12 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20140319363A1 (enExample) |
| EP (1) | EP2748639B1 (enExample) |
| JP (1) | JP6235480B2 (enExample) |
| CN (1) | CN104024889A (enExample) |
| BR (1) | BR112014014064A2 (enExample) |
| IN (1) | IN2014CN04758A (enExample) |
| RU (1) | RU2014128555A (enExample) |
| WO (1) | WO2013088352A2 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6186205B2 (ja) * | 2013-08-15 | 2017-08-23 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
| EP2876465A1 (en) * | 2013-11-26 | 2015-05-27 | Danmarks Tekniske Universitet (DTU) | X-ray and gamma-ray radiation detector |
| AT515501B1 (de) * | 2014-02-18 | 2016-01-15 | Griesmayer Erich Dr | Verfahren und Vorrichtung zum Erfassen und zum Unterscheiden von Elementarteilchen |
| DE102014207324A1 (de) * | 2014-04-16 | 2015-10-22 | Siemens Aktiengesellschaft | Direktkonvertierender Röntgenstrahlungsdetektor und CT-System |
| EP3161522B1 (en) * | 2014-12-05 | 2018-02-28 | Koninklijke Philips N.V. | X-ray detector device for inclined angle x-ray radiation |
| RU2705717C2 (ru) * | 2014-12-17 | 2019-11-11 | Конинклейке Филипс Н.В. | Детектор и способ для обнаружения ионизирующего излучения |
| JP2018505565A (ja) * | 2014-12-19 | 2018-02-22 | ジーレイ スイッツァーランド エスアー | モノリシックｃｍｏｓ集積ピクセル検出器ならびに様々な用途を含む粒子検出および撮像のためのシステムおよび方法 |
| US9482764B1 (en) * | 2015-05-28 | 2016-11-01 | General Electric Company | Systems and methods for charge-sharing identification and correction using a single pixel |
| JP6808317B2 (ja) * | 2015-12-04 | 2021-01-06 | キヤノン株式会社 | 撮像装置、および、撮像システム |
| JP6808316B2 (ja) * | 2015-12-04 | 2021-01-06 | キヤノン株式会社 | 撮像装置、および、撮像システム |
| CN105540526B (zh) * | 2015-12-29 | 2017-03-15 | 中国科学院电子学研究所 | 单片复合敏感电极的制造方法、基于其的敏感器件 |
| CN108885273B (zh) * | 2016-03-23 | 2023-09-08 | 皇家飞利浦有限公司 | 具有整体像素边界的纳米材料成像探测器 |
| CN105974460B (zh) * | 2016-05-11 | 2018-12-07 | 天津大学 | 可重构型x射线能谱探测方法及探测器像素单元结构 |
| CN106324649B (zh) * | 2016-08-31 | 2023-09-15 | 同方威视技术股份有限公司 | 半导体探测器 |
| EP3306353A1 (en) * | 2016-10-07 | 2018-04-11 | Danmarks Tekniske Universitet | Radiation detector |
| GB201703196D0 (en) | 2017-02-28 | 2017-04-12 | Univ Of Sussex | X-ray and gammay-ray photodiode |
| EP3422051A1 (en) * | 2017-06-28 | 2019-01-02 | Koninklijke Philips N.V. | Direct conversion radiation detection |
| EP3658959A4 (en) * | 2017-07-26 | 2020-12-23 | Shenzhen Xpectvision Technology Co., Ltd. | RADIATION DETECTOR WITH INTEGRATED DEPOLARIZATION DEVICE |
| EP3658960B1 (en) * | 2017-07-26 | 2022-09-07 | Shenzhen Xpectvision Technology Co., Ltd. | X-ray detector capable of managing charge sharing at its periphery |
| CN108267777B (zh) * | 2018-02-26 | 2023-07-07 | 张岚 | 面阵列像素探测器及中低能射线源的定向方法 |
| WO2021168693A1 (en) * | 2020-02-26 | 2021-09-02 | Shenzhen Xpectvision Technology Co., Ltd. | Radiation detector |
| US11835666B1 (en) * | 2020-07-31 | 2023-12-05 | Redlen Technologies, Inc. | Photon counting computed tomography detector with improved count rate stability and method of operating same |
| US11953452B2 (en) * | 2021-03-01 | 2024-04-09 | Redlen Technologies, Inc. | Ionizing radiation detector with reduced street width and improved count rate stability |
| JP2023055071A (ja) * | 2021-10-05 | 2023-04-17 | キヤノンメディカルシステムズ株式会社 | 検出器モジュール、ｘ線コンピュータ断層撮影装置及びｘ線検出装置 |
| CN120358815B (zh) * | 2025-06-19 | 2025-10-03 | 湘潭大学 | 一种带有肖特基漂浮电极的小像素阵列探测器 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5677539A (en) * | 1995-10-13 | 1997-10-14 | Digirad | Semiconductor radiation detector with enhanced charge collection |
| US6046454A (en) | 1995-10-13 | 2000-04-04 | Digirad Corporation | Semiconductor radiation detector with enhanced charge collection |
| DE19616545B4 (de) * | 1996-04-25 | 2006-05-11 | Siemens Ag | Schneller Strahlungsdetektor |
| SE514472C2 (sv) * | 1999-04-14 | 2001-02-26 | Xcounter Ab | Strålningsdetektor och en anordning för användning vid radiografi |
| JP3900992B2 (ja) * | 2002-04-02 | 2007-04-04 | 株式会社日立製作所 | 放射線検出器及び放射線検査装置 |
| US7145986B2 (en) * | 2004-05-04 | 2006-12-05 | General Electric Company | Solid state X-ray detector with improved spatial resolution |
| JP4881071B2 (ja) * | 2006-05-30 | 2012-02-22 | 株式会社日立製作所 | 放射線検出器、及びこれを搭載した放射線撮像装置 |
| DE102007055676A1 (de) * | 2007-11-21 | 2009-06-04 | Siemens Ag | Strahlungswandler, Strahlungsdetektor und Strahlungserfassungseinrichtung |
| JP5155808B2 (ja) * | 2008-10-08 | 2013-03-06 | 株式会社日立製作所 | 半導体放射線検出器および核医学診断装置 |
| WO2010073189A1 (en) * | 2008-12-22 | 2010-07-01 | Koninklijke Philips Electronics N.V. | Radiation detector with improved charge collection and minimized leakage currents |
| NL1037989C2 (en) * | 2010-05-28 | 2011-11-29 | Photonis France Sas | An electron multiplying structure for use in a vacuum tube using electron multiplying as well as a vacuum tube using electron multiplying provided with such an electron multiplying structure. |
-
2012
- 2012-12-12 IN IN4758CHN2014 patent/IN2014CN04758A/en unknown
- 2012-12-12 RU RU2014128555A patent/RU2014128555A/ru not_active Application Discontinuation
- 2012-12-12 JP JP2014546707A patent/JP6235480B2/ja not_active Expired - Fee Related
- 2012-12-12 CN CN201280061619.2A patent/CN104024889A/zh active Pending
- 2012-12-12 BR BR112014014064A patent/BR112014014064A2/pt not_active IP Right Cessation
- 2012-12-12 US US14/362,139 patent/US20140319363A1/en not_active Abandoned
- 2012-12-12 WO PCT/IB2012/057212 patent/WO2013088352A2/en not_active Ceased
- 2012-12-12 EP EP12819019.6A patent/EP2748639B1/en not_active Not-in-force
Also Published As
| Publication number | Publication date |
|---|---|
| BR112014014064A8 (pt) | 2017-06-13 |
| RU2014128555A (ru) | 2016-02-10 |
| JP2015507841A (ja) | 2015-03-12 |
| EP2748639B1 (en) | 2019-07-17 |
| BR112014014064A2 (pt) | 2017-06-13 |
| EP2748639A2 (en) | 2014-07-02 |
| WO2013088352A3 (en) | 2013-08-08 |
| JP6235480B2 (ja) | 2017-11-22 |
| US20140319363A1 (en) | 2014-10-30 |
| CN104024889A (zh) | 2014-09-03 |
| WO2013088352A2 (en) | 2013-06-20 |
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