RU2014128555A - Детектор излучения - Google Patents
Детектор излучения Download PDFInfo
- Publication number
- RU2014128555A RU2014128555A RU2014128555A RU2014128555A RU2014128555A RU 2014128555 A RU2014128555 A RU 2014128555A RU 2014128555 A RU2014128555 A RU 2014128555A RU 2014128555 A RU2014128555 A RU 2014128555A RU 2014128555 A RU2014128555 A RU 2014128555A
- Authority
- RU
- Russia
- Prior art keywords
- segments
- cathode
- anode
- radiation detector
- detector according
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title claims abstract 29
- 239000004065 semiconductor Substances 0.000 claims abstract 19
- 239000000463 material Substances 0.000 claims 7
- 238000001514 detection method Methods 0.000 claims 4
- 230000000737 periodic effect Effects 0.000 claims 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims 1
- 229910004613 CdTe Inorganic materials 0.000 claims 1
- 229910004611 CdZnTe Inorganic materials 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910004262 HgTe Inorganic materials 0.000 claims 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1892—Direct radiation image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
- H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161569833P | 2011-12-13 | 2011-12-13 | |
| US61/569,833 | 2011-12-13 | ||
| PCT/IB2012/057212 WO2013088352A2 (en) | 2011-12-13 | 2012-12-12 | Radiation detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| RU2014128555A true RU2014128555A (ru) | 2016-02-10 |
Family
ID=47624380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2014128555A RU2014128555A (ru) | 2011-12-13 | 2012-12-12 | Детектор излучения |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20140319363A1 (enExample) |
| EP (1) | EP2748639B1 (enExample) |
| JP (1) | JP6235480B2 (enExample) |
| CN (1) | CN104024889A (enExample) |
| BR (1) | BR112014014064A2 (enExample) |
| IN (1) | IN2014CN04758A (enExample) |
| RU (1) | RU2014128555A (enExample) |
| WO (1) | WO2013088352A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11313981B2 (en) | 2017-02-28 | 2022-04-26 | The University Of Sussex | X-ray and γ-ray photodiode |
| RU2797929C2 (ru) * | 2017-02-28 | 2023-06-13 | Дзе Юниверсити Оф Сассекс | Рентгеновский и гамма-лучевой фотодиод |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6186205B2 (ja) * | 2013-08-15 | 2017-08-23 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
| EP2876465A1 (en) * | 2013-11-26 | 2015-05-27 | Danmarks Tekniske Universitet (DTU) | X-ray and gamma-ray radiation detector |
| AT515501B1 (de) * | 2014-02-18 | 2016-01-15 | Griesmayer Erich Dr | Verfahren und Vorrichtung zum Erfassen und zum Unterscheiden von Elementarteilchen |
| DE102014207324A1 (de) * | 2014-04-16 | 2015-10-22 | Siemens Aktiengesellschaft | Direktkonvertierender Röntgenstrahlungsdetektor und CT-System |
| EP3161522B1 (en) * | 2014-12-05 | 2018-02-28 | Koninklijke Philips N.V. | X-ray detector device for inclined angle x-ray radiation |
| RU2705717C2 (ru) * | 2014-12-17 | 2019-11-11 | Конинклейке Филипс Н.В. | Детектор и способ для обнаружения ионизирующего излучения |
| EP3235000B1 (en) * | 2014-12-19 | 2021-01-13 | G-ray Switzerland SA | Method for manufacturing a monolithic cmos integrated pixel detector |
| US9482764B1 (en) * | 2015-05-28 | 2016-11-01 | General Electric Company | Systems and methods for charge-sharing identification and correction using a single pixel |
| JP6808317B2 (ja) * | 2015-12-04 | 2021-01-06 | キヤノン株式会社 | 撮像装置、および、撮像システム |
| JP6808316B2 (ja) * | 2015-12-04 | 2021-01-06 | キヤノン株式会社 | 撮像装置、および、撮像システム |
| CN105540526B (zh) * | 2015-12-29 | 2017-03-15 | 中国科学院电子学研究所 | 单片复合敏感电极的制造方法、基于其的敏感器件 |
| US10877168B2 (en) * | 2016-03-23 | 2020-12-29 | Koninklijke Philips N.V. | Nano-material imaging detector with an integral pixel border |
| CN105974460B (zh) * | 2016-05-11 | 2018-12-07 | 天津大学 | 可重构型x射线能谱探测方法及探测器像素单元结构 |
| CN106324649B (zh) | 2016-08-31 | 2023-09-15 | 同方威视技术股份有限公司 | 半导体探测器 |
| EP3306353A1 (en) * | 2016-10-07 | 2018-04-11 | Danmarks Tekniske Universitet | Radiation detector |
| EP3422051A1 (en) * | 2017-06-28 | 2019-01-02 | Koninklijke Philips N.V. | Direct conversion radiation detection |
| WO2019019038A1 (en) | 2017-07-26 | 2019-01-31 | Shenzhen Xpectvision Technology Co., Ltd. | X-RAY DETECTOR CAPABLE OF MANAGING LOAD SHARING AT ITS PERIPHERY |
| EP3658959A4 (en) * | 2017-07-26 | 2020-12-23 | Shenzhen Xpectvision Technology Co., Ltd. | RADIATION DETECTOR WITH INTEGRATED DEPOLARIZATION DEVICE |
| CN108267777B (zh) * | 2018-02-26 | 2023-07-07 | 张岚 | 面阵列像素探测器及中低能射线源的定向方法 |
| EP4111238A4 (en) * | 2020-02-26 | 2023-12-06 | Shenzhen Xpectvision Technology Co., Ltd. | Radiation detector |
| US11835666B1 (en) * | 2020-07-31 | 2023-12-05 | Redlen Technologies, Inc. | Photon counting computed tomography detector with improved count rate stability and method of operating same |
| US11953452B2 (en) * | 2021-03-01 | 2024-04-09 | Redlen Technologies, Inc. | Ionizing radiation detector with reduced street width and improved count rate stability |
| JP2023055071A (ja) | 2021-10-05 | 2023-04-17 | キヤノンメディカルシステムズ株式会社 | 検出器モジュール、ｘ線コンピュータ断層撮影装置及びｘ線検出装置 |
| CN120358815B (zh) * | 2025-06-19 | 2025-10-03 | 湘潭大学 | 一种带有肖特基漂浮电极的小像素阵列探测器 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5677539A (en) * | 1995-10-13 | 1997-10-14 | Digirad | Semiconductor radiation detector with enhanced charge collection |
| US6046454A (en) * | 1995-10-13 | 2000-04-04 | Digirad Corporation | Semiconductor radiation detector with enhanced charge collection |
| DE19616545B4 (de) * | 1996-04-25 | 2006-05-11 | Siemens Ag | Schneller Strahlungsdetektor |
| SE514472C2 (sv) * | 1999-04-14 | 2001-02-26 | Xcounter Ab | Strålningsdetektor och en anordning för användning vid radiografi |
| JP3900992B2 (ja) * | 2002-04-02 | 2007-04-04 | 株式会社日立製作所 | 放射線検出器及び放射線検査装置 |
| US7145986B2 (en) * | 2004-05-04 | 2006-12-05 | General Electric Company | Solid state X-ray detector with improved spatial resolution |
| JP4881071B2 (ja) * | 2006-05-30 | 2012-02-22 | 株式会社日立製作所 | 放射線検出器、及びこれを搭載した放射線撮像装置 |
| DE102007055676A1 (de) * | 2007-11-21 | 2009-06-04 | Siemens Ag | Strahlungswandler, Strahlungsdetektor und Strahlungserfassungseinrichtung |
| JP5155808B2 (ja) * | 2008-10-08 | 2013-03-06 | 株式会社日立製作所 | 半導体放射線検出器および核医学診断装置 |
| WO2010073189A1 (en) * | 2008-12-22 | 2010-07-01 | Koninklijke Philips Electronics N.V. | Radiation detector with improved charge collection and minimized leakage currents |
| NL1037989C2 (en) * | 2010-05-28 | 2011-11-29 | Photonis France Sas | An electron multiplying structure for use in a vacuum tube using electron multiplying as well as a vacuum tube using electron multiplying provided with such an electron multiplying structure. |
-
2012
- 2012-12-12 IN IN4758CHN2014 patent/IN2014CN04758A/en unknown
- 2012-12-12 EP EP12819019.6A patent/EP2748639B1/en not_active Not-in-force
- 2012-12-12 CN CN201280061619.2A patent/CN104024889A/zh active Pending
- 2012-12-12 RU RU2014128555A patent/RU2014128555A/ru not_active Application Discontinuation
- 2012-12-12 WO PCT/IB2012/057212 patent/WO2013088352A2/en not_active Ceased
- 2012-12-12 JP JP2014546707A patent/JP6235480B2/ja not_active Expired - Fee Related
- 2012-12-12 US US14/362,139 patent/US20140319363A1/en not_active Abandoned
- 2012-12-12 BR BR112014014064A patent/BR112014014064A2/pt not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11313981B2 (en) | 2017-02-28 | 2022-04-26 | The University Of Sussex | X-ray and γ-ray photodiode |
| RU2797929C2 (ru) * | 2017-02-28 | 2023-06-13 | Дзе Юниверсити Оф Сассекс | Рентгеновский и гамма-лучевой фотодиод |
Also Published As
| Publication number | Publication date |
|---|---|
| US20140319363A1 (en) | 2014-10-30 |
| CN104024889A (zh) | 2014-09-03 |
| JP6235480B2 (ja) | 2017-11-22 |
| EP2748639A2 (en) | 2014-07-02 |
| BR112014014064A8 (pt) | 2017-06-13 |
| EP2748639B1 (en) | 2019-07-17 |
| WO2013088352A2 (en) | 2013-06-20 |
| BR112014014064A2 (pt) | 2017-06-13 |
| WO2013088352A3 (en) | 2013-08-08 |
| IN2014CN04758A (enExample) | 2015-09-18 |
| JP2015507841A (ja) | 2015-03-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FA94 | Acknowledgement of application withdrawn (non-payment of fees) |
Effective date: 20170918 |