JP6230621B2 - 集積回路において電荷の放電を可能にするための回路および方法 - Google Patents
集積回路において電荷の放電を可能にするための回路および方法 Download PDFInfo
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- JP6230621B2 JP6230621B2 JP2015552626A JP2015552626A JP6230621B2 JP 6230621 B2 JP6230621 B2 JP 6230621B2 JP 2015552626 A JP2015552626 A JP 2015552626A JP 2015552626 A JP2015552626 A JP 2015552626A JP 6230621 B2 JP6230621 B2 JP 6230621B2
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- 239000000758 substrate Substances 0.000 claims description 48
- 230000008878 coupling Effects 0.000 claims description 12
- 238000010168 coupling process Methods 0.000 claims description 12
- 238000005859 coupling reaction Methods 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 230000006870 function Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000013461 design Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000003071 parasitic effect Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
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- 239000011230 binding agent Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
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- 230000001360 synchronised effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
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- 239000011159 matrix material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/044—Physical layout, materials not provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Description
Claims (10)
- 集積回路において電荷の放電を可能にするための回路であって、
P型基板と、
前記P型基板に形成されたNウェルと、
第1のノードに結合された入力/出力パッドと、
前記第1のノードと接地ノードとの間に結合された第1のダイオードと、
前記第1のノードと前記接地ノードとの間に前記第1のダイオードと並列に結合されたNチャネルトランジスタとを備え、
前記Nチャネルトランジスタのドレインは、前記入力/出力パッドに結合され、
前記Nチャネルトランジスタのゲートは、前記入力/出力パッドにおいて、反転出力データに基づいて出力データを生成するために前記反転出力データを受取り、前記回路はさらに、
前記Nチャネルトランジスタのボディ部と前記接地ノードとの間に結合された抵抗器と、
前記P型基板に形成され、前記第1のノードから前記P型基板に電荷を結合することを可能にするN型領域と、
前記第1のノードとパワーノードとの間に並列に結合された第2のダイオードおよびPチャネルトランジスタと、
ドライバとをさらに備え、
前記ドライバは、
前記第1のノードと前記パワーノードとの間に直列に結合されたPチャネルトランジスタの対と、
前記第1のノードと前記接地ノードとの間に直列に結合されたNチャネルトランジスタの対とを有し、
前記Nチャネルトランジスタの対の第1のトランジスタのボディ部と前記接地ノードとの間に結合された第2の抵抗器をさらに備える、回路。 - 前記Nウェルは、前記P型基板に形成された深いNウェルを備え、
前記Nチャネルトランジスタのソースおよびドレイン領域は、前記深いNウェルのPウェルに形成される、請求項1に記載の回路。 - 前記抵抗器は、前記Pウェルと前記P型基板との間に形成される、請求項2に記載の回路。
- 前記抵抗器は、前記P型基板上に形成されたポリシリコン抵抗器を備える、請求項3に記載の回路。
- 集積回路において電荷の放電を可能にする方法であって、
P型基板を設けるステップと、
前記P型基板に形成されたNウェルを設けるステップと、
入力/出力パッドを設けるステップと、
前記入力/出力パッドにおける第1のノードと接地ノードとの間にダイオードを結合するステップと、
前記第1のノードと前記接地ノードとの間にNチャネルトランジスタを結合するステップとを備え、
前記Nチャネルトランジスタのドレインは、前記入力/出力パッドに結合され、
前記Nチャネルトランジスタのゲートは、前記入力/出力パッドにおいて、反転出力データに基づいて出力データを生成するために前記反転出力データを受取り、前記方法はさらに、
前記Nチャネルトランジスタのボディ部と前記接地ノードとの間の放電経路の抵抗を増大させるステップと、
前記ダイオードを介して前記第1のノードから前記P型基板に電荷を結合することを可能にするステップと、
前記第1のノードとパワーノードとの間に、第2のダイオードおよびPチャネルトランジスタを並列に結合するステップと、
前記第1のノードと前記パワーノードとの間に、Pチャネルトランジスタの対を直列に結合するステップと、
前記第1のノードと前記接地ノードとの間に、Nチャネルトランジスタの対を直列に結合するステップと、
前記Nチャネルトランジスタの対の第1のトランジスタのボディ部と前記接地ノードとの間に第2の抵抗器を結合するステップとを備える、方法。 - 前記P型基板にNウェルを設けるステップは、前記P型基板に深いNウェルを設けるステップを備え、
第1のノードと前記接地ノードとの間に前記Nチャネルトランジスタを結合するステップは、前記深いNウェルのPウェルに前記Nチャネルトランジスタのソースおよびドレイン領域を形成するステップを備える、請求項5に記載の方法。 - 前記入力/出力パッドにおける第1のノードと接地ノードとの間にダイオードを結合するステップは、前記P型基板にN型領域を形成するステップを備える、請求項5または請求項6に記載の方法。
- 前記Nチャネルトランジスタのボディ部と前記接地ノードとの間の放電経路の抵抗を増大させるステップは、前記Nチャネルトランジスタの前記ボディ部と前記接地ノードとの間に抵抗器を設けるステップを備える、請求項5から請求項7のいずれか1項に記載の方法。
- 前記Nチャネルトランジスタの前記ボディ部と前記接地ノードとの間に抵抗器を設けるステップは、前記P型基板上にポリシリコン抵抗器を形成するステップを備える、請求項8に記載の方法。
- 前記入力/出力パッドから前記ダイオードに電荷をリダイレクトするステップをさらに備える、請求項5から請求項9のいずれか1項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/741,619 US9013844B2 (en) | 2013-01-15 | 2013-01-15 | Circuit for and method of enabling the discharge of electric charge in an integrated circuit |
US13/741,619 | 2013-01-15 | ||
PCT/US2013/064231 WO2014113098A1 (en) | 2013-01-15 | 2013-10-10 | Circuit for and method of enabling the discharge of electric charge in an integrated circuit |
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JP2016520985A JP2016520985A (ja) | 2016-07-14 |
JP6230621B2 true JP6230621B2 (ja) | 2017-11-15 |
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Country Status (6)
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US (1) | US9013844B2 (ja) |
EP (1) | EP2946404B1 (ja) |
JP (1) | JP6230621B2 (ja) |
KR (1) | KR102121636B1 (ja) |
CN (1) | CN104937717B (ja) |
WO (1) | WO2014113098A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US9462674B1 (en) | 2013-08-26 | 2016-10-04 | Xilinx, Inc. | Circuits for and methods of providing a charge device model ground path using substrate taps in an integrated circuit device |
US9275990B2 (en) * | 2014-05-05 | 2016-03-01 | Microsemi SoC Corporation | Circuit and method for reducing BVii on highly overdriven devices |
JP6413467B2 (ja) * | 2014-08-19 | 2018-10-31 | 富士電機株式会社 | 半導体装置 |
US10325901B1 (en) * | 2017-01-05 | 2019-06-18 | Xilinx, Inc. | Circuit for increasing the impedance of an ESD path in an input/output circuit and method of implementing the same |
JPWO2021090688A1 (ja) * | 2019-11-06 | 2021-05-14 | ||
US12034000B2 (en) * | 2022-03-23 | 2024-07-09 | Nxp B.V. | Double IO pad cell including electrostatic discharge protection scheme with reduced latch-up risk |
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JPH0665224B2 (ja) | 1984-04-20 | 1994-08-22 | 日立マイクロコンピュ−タエンジニアリング株式会社 | 半導体集積回路装置 |
US5477413A (en) * | 1994-01-26 | 1995-12-19 | Cypress Semiconductor Corp. | ESD protection structure for P-well technology |
JP3127841B2 (ja) * | 1996-10-11 | 2001-01-29 | 日本電気株式会社 | 半導体装置 |
DE10056833C2 (de) | 1999-11-24 | 2003-03-20 | Int Rectifier Corp | Integrierte Treiberschaltung für Halbbrückenschaltung mit zwei Leistungstransistoren |
TW484227B (en) | 2001-05-11 | 2002-04-21 | Faraday Tech Corp | Layout structure of ESD protection circuit |
CN1310325C (zh) | 2001-07-05 | 2007-04-11 | 萨诺夫公司 | Mos器件以及静电放电保护电路 |
JP4199476B2 (ja) * | 2002-04-12 | 2008-12-17 | 株式会社ルネサステクノロジ | 半導体装置の保護回路 |
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2013
- 2013-01-15 US US13/741,619 patent/US9013844B2/en active Active
- 2013-10-10 CN CN201380070408.XA patent/CN104937717B/zh active Active
- 2013-10-10 WO PCT/US2013/064231 patent/WO2014113098A1/en active Application Filing
- 2013-10-10 EP EP13777465.9A patent/EP2946404B1/en active Active
- 2013-10-10 JP JP2015552626A patent/JP6230621B2/ja active Active
- 2013-10-10 KR KR1020157017691A patent/KR102121636B1/ko active IP Right Grant
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Publication number | Publication date |
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CN104937717B (zh) | 2018-06-12 |
CN104937717A (zh) | 2015-09-23 |
KR20150106407A (ko) | 2015-09-21 |
US20140198416A1 (en) | 2014-07-17 |
JP2016520985A (ja) | 2016-07-14 |
EP2946404A1 (en) | 2015-11-25 |
KR102121636B1 (ko) | 2020-06-10 |
EP2946404B1 (en) | 2018-12-05 |
US9013844B2 (en) | 2015-04-21 |
WO2014113098A1 (en) | 2014-07-24 |
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