JP6223544B2 - オプトエレクトロニクス素子、支持体結合体及び複数のオプトエレクトロニクス素子を製造するための方法 - Google Patents
オプトエレクトロニクス素子、支持体結合体及び複数のオプトエレクトロニクス素子を製造するための方法 Download PDFInfo
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- 230000005693 optoelectronics Effects 0.000 title claims description 106
- 238000000034 method Methods 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 230000003014 reinforcing effect Effects 0.000 claims description 141
- 239000004020 conductor Substances 0.000 claims description 70
- 230000002787 reinforcement Effects 0.000 claims description 67
- 239000003566 sealing material Substances 0.000 claims description 60
- 239000000463 material Substances 0.000 claims description 25
- 238000005266 casting Methods 0.000 claims description 17
- 238000001746 injection moulding Methods 0.000 claims description 15
- 238000001125 extrusion Methods 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 6
- 239000002657 fibrous material Substances 0.000 claims description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 229920003023 plastic Polymers 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 239000002178 crystalline material Substances 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- -1 anodized aluminum Chemical compound 0.000 description 2
- 229920006231 aramid fiber Polymers 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 239000004954 Polyphthalamide Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229920006375 polyphtalamide Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000003351 stiffener Substances 0.000 description 1
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Description
2 支持体
3 取付面
4 第1のコンタクト面
5 第2のコンタクト面
6 発光素子
7 接続素子
8 キャビティ
9 ケーシング
10 封止材料
11 表面
12 補強体
13 凹部
15 第1の側面
16 第2の側面
17 第1の直列回路コンタクト面
18 第2の直列回路コンタクト面
19 第3の直列回路コンタクト面
20 ケーシング封止材料
21 エミッタキャビティ
22 補強体キャビティ
23 第1の側面
24 反対側に位置する側面
25 透過性封止材料
26 補強体封止材料
30 空間方向
100 支持体結合体
102 縁部領域
103 構成部材領域
105 分割線
106 長手方向の寸法
107 側面
110 導体フレーム
111 接続ウェブ
112 個別電極
120 ケーシング結合体
124 ケーシング結合体の収容部
Claims (14)
- オプトエレクトロニクス素子(1)において、
・取付面(3)を備えている支持体(2)と、
・前記取付面(3)上に配置されており、且つ、前記支持体(2)と導電的に接続されている、少なくとも一つの発光素子(6)と、
・前記オプトエレクトロニクス素子(1)に組み込まれている少なくとも一つの補強体(12)と、
・ケーシング封止材料(20)又はケーシング押出材料から成るケーシング(9)と、
・補強体キャビティと、
を有しており、
前記発光素子(6)は、前記ケーシング(9)のエミッタキャビティ(21)内に配置されており、
前記補強体キャビティ内には前記補強体(12)が配置されており、該補強体(12)は、補強体封止材料(26)が注型成形されるか又は射出成形されることによって、完全に又は部分的に囲まれており、
前記補強体(12)は、前記支持体(2)の前記取付面(3)上に配置されており、かつ、前記補強体(12)は、細長い棒として形成されている、
ことを特徴とする、オプトエレクトロニクス素子(1)。 - 前記補強体は、非導電性に形成されており、且つ、繊維材料及び/又はセラミック材料及び/又は結晶材料及び/又はプラスチック材料を有している、請求項1に記載のオプトエレクトロニクス素子(1)。
- 前記補強体(12)は、前記オプトエレクトロニクス素子(1)の第1の側面(15)から、前記オプトエレクトロニクス素子(1)の反対側に位置する側面(16)まで延びている、長手方向の寸法(106)を有している、請求項1または2に記載のオプトエレクトロニクス素子(1)。
- 前記補強体(12)は、前記ケーシング(9)の補強体キャビティ(22)内に、又は、収容部(124)内に配置されて、かつ、補強体封止材料(26)で部分的又は完全に封止又は包囲されている、
請求項1乃至3のいずれか一項に記載のオプトエレクトロニクス素子(1)。 - 導体フレーム(110)及びケーシング結合体(120)を有している、複数のオプトエレクトロニクス素子(1)を製造するための支持体結合体(100)において、
前記導体フレーム(110)は、相互に接続されている複数の支持体(2)を有しており、
前記支持体(2)は、取付面(3)を備えており、
前記ケーシング結合体(120)は、ケーシング封止材料(20)又はケーシング押出材料を有しており、前記導体フレーム(110)を部分的又は完全に包囲しており、且つ、エミッタキャビティ(21)を有しており、該エミッタキャビティ(21)は、発光素子(6)を前記取付面(3)上に配置し、且つ、該発光素子(6)を前記支持体(2)に電気的に接触接続させるために形成されており、
前記支持体結合体(100)は、少なくとも一つの補強体(12)を有しており、該補強体(12)は、完全に又は部分的に前記ケーシング結合体(120)によって包囲されており、
前記補強体(12)は、前記ケーシング結合体(120)の補強体キャビティ(22)内に配置されており、
前記補強体(12)は、前記支持体(2)の前記取付面(3)上に配置されており、かつ、前記補強体(12)は、細長い棒として形成されている、
ことを特徴とする、支持体結合体(100)。 - 前記補強体(12)は、非導電性に形成されている、及び/又は、繊維材料及び/又はセラミック材料及び/又は結晶材料及び/又はプラスチック材料を有している、請求項5に記載の支持体結合体(100)。
- 前記補強体(12)は、前記導体フレーム(110)の縁部領域(102)に配置されている、請求項5または6に記載の支持体結合体(100)。
- 前記補強体(12)は、前記導体フレーム(110)の構成部材領域(103)に配置されている、請求項5または6に記載の支持体結合体(100)。
- 前記補強体(12)は、複数の支持体(2)にわたり延びている長手方向の寸法(106)を有している、請求項5乃至8のいずれか一項に記載の支持体結合体(100)。
- 前記支持体結合体(100)は、別の複数の補強体(12)を有しており、
各支持体(2)上に、それぞれ少なくとも一つの補強体(12)が配置されている、請求項5乃至9のいずれか一項に記載の支持体結合体(100)。 - 請求項1乃至4のいずれか一項に記載の複数のオプトエレクトロニクス素子(1)を製造するための方法において、
それぞれが一つの取付面(3)を備えており且つ相互に接続されている複数の支持体(2)から成る、導体フレーム(110)を準備するステップと、
一つ又は複数の補強体(12)を、前記導体フレーム(110)の取付面(3)上に配置するステップと、
発光素子(6)を前記取付面(3)上に配置し、且つ、該発光素子(6)を前記支持体(2)に電気的に接触接続させるために形成されているエミッタキャビティ(21)を有しているケーシング結合体(120)を、ケーシング封止材料(20)又はケーシング押出材料を前記導体フレーム(110)に注型成形するか又は射出成形するか又は押出成形して囲むことによって作製するステップと、
発光素子(6)を前記エミッタキャビティ(21)内に配置し、該発光素子(6)を透過性封止材料(25)でもって封止するステップと、
前記導体フレーム(110)の支持体(2)を個別化するステップと、
を備えており、
ただし、前記補強体(12)は、完全に又は部分的に前記ケーシング結合体(120)によって包囲されおり、かつ、前記補強体(12)は、細長い棒として形成されている、
ことを特徴とする、複数のオプトエレクトロニクス素子(1)を製造するための方法。 - 前記補強体(12)を、前記導体フレーム(110)の縁部領域(102)又は構成部材領域(103)に配置する、請求項11に記載の方法。
- 前記補強体(12)を、前記ケーシング結合体(120)の作製前に、前記導体フレーム(110)に配置し、
前記ケーシング結合体(120)の作製時に、前記ケーシング封止材料(20)又はケーシング押出材料を注型成形するか又は押出成形するか又は射出成形することによって、前記補強体(12)を部分的に又は完全に囲む、請求項11又は12に記載の方法。 - 前記補強体(12)を、前記ケーシング結合体(120)の作製後に、前記ケーシング結合体(120)の前記エミッタキャビティ(21)内に配置し、前記透過性封止材料(25)でもって封止する、請求項11乃至13のいずれか一項に記載の方法。
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DE102013206186.2 | 2013-04-09 | ||
DE102013206186.2A DE102013206186A1 (de) | 2013-04-09 | 2013-04-09 | Optoelektronisches Bauelement |
PCT/EP2014/057196 WO2014167021A1 (de) | 2013-04-09 | 2014-04-09 | Lichtemittierendes halbleiterbauelement |
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US (1) | US9614134B2 (ja) |
JP (1) | JP6223544B2 (ja) |
KR (1) | KR20150140369A (ja) |
CN (1) | CN105264679B (ja) |
DE (2) | DE102013206186A1 (ja) |
WO (1) | WO2014167021A1 (ja) |
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DE102015107660A1 (de) * | 2015-05-15 | 2016-11-17 | Osram Opto Semiconductors Gmbh | Elektronisches Bauteil sowie Verfahren zur Herstellung eines elektronischen Bauteils |
DE102015112757A1 (de) * | 2015-08-04 | 2017-02-09 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
DE102016114571A1 (de) * | 2016-08-05 | 2018-02-08 | Osram Opto Semiconductors Gmbh | Filament mit einem träger |
US11677059B2 (en) | 2017-04-26 | 2023-06-13 | Samsung Electronics Co., Ltd. | Light-emitting device package including a lead frame |
KR102335216B1 (ko) * | 2017-04-26 | 2021-12-03 | 삼성전자 주식회사 | 발광소자 패키지 |
JP7089167B2 (ja) | 2018-04-23 | 2022-06-22 | 日亜化学工業株式会社 | 発光装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2697743B2 (ja) * | 1989-05-29 | 1998-01-14 | 富士通株式会社 | 樹脂封止型半導体装置 |
JPH0498858A (ja) * | 1990-08-16 | 1992-03-31 | Nec Kyushu Ltd | 半導体装置用リードフレーム |
JP2761193B2 (ja) * | 1994-03-10 | 1998-06-04 | 日本モトローラ株式会社 | 外部リードを固定したリードフレーム及びこれを利用した半導体装置並びにその製造方法 |
DE10020465A1 (de) * | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement |
DE10214121C1 (de) * | 2002-03-28 | 2003-12-24 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit mehreren Halbleiterchips |
JP2004193294A (ja) * | 2002-12-11 | 2004-07-08 | Shinko Electric Ind Co Ltd | 半導体用中空樹脂パッケージ |
JP4341832B2 (ja) * | 2003-12-08 | 2009-10-14 | 鈴鹿富士ゼロックス株式会社 | Ledプリントヘッドの製造方法 |
JP2006237289A (ja) * | 2005-02-25 | 2006-09-07 | Toppan Printing Co Ltd | リードフレーム構造体及びその製造方法 |
DE202007018552U1 (de) * | 2007-08-15 | 2008-10-23 | Zender, Arnold | Verformbares Beleuchtungsmodul |
DE102008053489A1 (de) | 2008-10-28 | 2010-04-29 | Osram Opto Semiconductors Gmbh | Trägerkörper für ein Halbleiterbauelement, Halbleiterbauelement und Verfahren zur Herstellung eines Trägerkörpers |
DE102009031008A1 (de) | 2009-06-29 | 2010-12-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
KR101114197B1 (ko) * | 2010-08-09 | 2012-02-22 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 조명 시스템 |
US20130170208A1 (en) * | 2010-10-14 | 2013-07-04 | Panasonic Corporation | Light-emitting device and surface light source device using same |
KR101890084B1 (ko) | 2010-11-02 | 2018-08-20 | 다이니폰 인사츠 가부시키가이샤 | 리드 프레임 및 반도체 장치 |
DE102011056810B4 (de) * | 2011-12-21 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement |
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2013
- 2013-04-09 DE DE102013206186.2A patent/DE102013206186A1/de not_active Withdrawn
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2014
- 2014-04-09 DE DE112014001884.8T patent/DE112014001884B4/de active Active
- 2014-04-09 WO PCT/EP2014/057196 patent/WO2014167021A1/de active Application Filing
- 2014-04-09 KR KR1020157032086A patent/KR20150140369A/ko not_active Application Discontinuation
- 2014-04-09 US US14/783,255 patent/US9614134B2/en active Active
- 2014-04-09 CN CN201480032855.0A patent/CN105264679B/zh active Active
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Also Published As
Publication number | Publication date |
---|---|
WO2014167021A1 (de) | 2014-10-16 |
CN105264679B (zh) | 2018-09-18 |
KR20150140369A (ko) | 2015-12-15 |
CN105264679A (zh) | 2016-01-20 |
US20160043291A1 (en) | 2016-02-11 |
JP2016516309A (ja) | 2016-06-02 |
DE102013206186A1 (de) | 2014-10-09 |
US9614134B2 (en) | 2017-04-04 |
DE112014001884B4 (de) | 2024-05-02 |
DE112014001884A5 (de) | 2015-12-24 |
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