JP6218561B2 - 光半導体素子、及び前記光半導体素子を光源として備えた光干渉断層撮像装置 - Google Patents

光半導体素子、及び前記光半導体素子を光源として備えた光干渉断層撮像装置 Download PDF

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Publication number
JP6218561B2
JP6218561B2 JP2013228750A JP2013228750A JP6218561B2 JP 6218561 B2 JP6218561 B2 JP 6218561B2 JP 2013228750 A JP2013228750 A JP 2013228750A JP 2013228750 A JP2013228750 A JP 2013228750A JP 6218561 B2 JP6218561 B2 JP 6218561B2
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layer
light
cladding layer
optical semiconductor
semiconductor element
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Japanese (ja)
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JP2014112667A5 (enExample
JP2014112667A (ja
Inventor
貴子 須賀
貴子 須賀
武志 内田
武志 内田
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/042—Superluminescent diodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/0209—Low-coherence interferometers
    • G01B9/02091—Tomographic interferometers, e.g. based on optical coherence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4795—Scattering, i.e. diffuse reflection spatially resolved investigating of object in scattering medium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Radiology & Medical Imaging (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Led Devices (AREA)
JP2013228750A 2012-11-06 2013-11-01 光半導体素子、及び前記光半導体素子を光源として備えた光干渉断層撮像装置 Expired - Fee Related JP6218561B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013228750A JP6218561B2 (ja) 2012-11-06 2013-11-01 光半導体素子、及び前記光半導体素子を光源として備えた光干渉断層撮像装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012244344 2012-11-06
JP2012244344 2012-11-06
JP2013228750A JP6218561B2 (ja) 2012-11-06 2013-11-01 光半導体素子、及び前記光半導体素子を光源として備えた光干渉断層撮像装置

Publications (3)

Publication Number Publication Date
JP2014112667A JP2014112667A (ja) 2014-06-19
JP2014112667A5 JP2014112667A5 (enExample) 2016-12-15
JP6218561B2 true JP6218561B2 (ja) 2017-10-25

Family

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JP2013228750A Expired - Fee Related JP6218561B2 (ja) 2012-11-06 2013-11-01 光半導体素子、及び前記光半導体素子を光源として備えた光干渉断層撮像装置

Country Status (3)

Country Link
US (1) US9847444B2 (enExample)
JP (1) JP6218561B2 (enExample)
WO (1) WO2014073583A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102019858B1 (ko) * 2013-07-18 2019-09-09 엘지이노텍 주식회사 발광소자 및 조명시스템
KR102390624B1 (ko) 2015-06-05 2022-04-26 오스텐도 테크놀로지스 인코포레이티드 다수의 활성층들로 선택적으로 캐리어를 주입한 발광 구조체
JP2017037977A (ja) 2015-08-11 2017-02-16 セイコーエプソン株式会社 発光装置およびプロジェクター
US10396240B2 (en) 2015-10-08 2019-08-27 Ostendo Technologies, Inc. III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
WO2018124677A1 (ko) * 2016-12-26 2018-07-05 엘지이노텍 주식회사 반도체 소자

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5226053A (en) 1991-12-27 1993-07-06 At&T Bell Laboratories Light emitting diode
JPH0799363A (ja) * 1993-09-28 1995-04-11 Toshiba Corp 半導体発光装置
JPH09172197A (ja) 1995-12-19 1997-06-30 Mitsubishi Cable Ind Ltd 半導体発光素子
US5850411A (en) * 1996-09-17 1998-12-15 Sdl, Inc Transverse electric (TE) polarization mode AlGaInP/GaAs red laser diodes, especially with self-pulsating operation
JP3427649B2 (ja) * 1996-11-29 2003-07-22 ソニー株式会社 自励発振型半導体レーザ
JP3553377B2 (ja) * 1998-07-02 2004-08-11 本田技研工業株式会社 燃料電池システムおよびその排水方法
US6879610B2 (en) 2002-09-27 2005-04-12 Sarnoff Corporation Narrow spectral width light emitting devices
JP2006108350A (ja) * 2004-10-05 2006-04-20 Stanley Electric Co Ltd 半導体発光素子
JP2007208062A (ja) 2006-02-02 2007-08-16 Sumitomo Electric Ind Ltd 半導体レーザ素子
JP4836606B2 (ja) 2006-02-24 2011-12-14 京セラ株式会社 化合物半導体発光素子および化合物半導体発光装置
KR101393897B1 (ko) * 2007-08-29 2014-05-13 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP2010021430A (ja) * 2008-07-11 2010-01-28 Sumitomo Electric Ind Ltd 半導体光素子
JP2012069770A (ja) 2010-09-24 2012-04-05 Canon Inc 半導体発光素子および、該半導体発光素子による波長可変光源装置、ｓｄ−ｏｃｔ装置、ｓｓ−ｏｃｔ装置
JP5675268B2 (ja) * 2010-10-21 2015-02-25 キヤノン株式会社 光干渉断層撮像装置、光干渉断層撮像方法、補償方法およびプログラム
JP2012160665A (ja) 2011-02-02 2012-08-23 Toshiba Corp 半導体発光装置

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US9847444B2 (en) 2017-12-19
US20150295126A1 (en) 2015-10-15
JP2014112667A (ja) 2014-06-19
WO2014073583A1 (en) 2014-05-15

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