JP6211836B2 - 充電装置 - Google Patents
充電装置 Download PDFInfo
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- JP6211836B2 JP6211836B2 JP2013145081A JP2013145081A JP6211836B2 JP 6211836 B2 JP6211836 B2 JP 6211836B2 JP 2013145081 A JP2013145081 A JP 2013145081A JP 2013145081 A JP2013145081 A JP 2013145081A JP 6211836 B2 JP6211836 B2 JP 6211836B2
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- 239000004065 semiconductor Substances 0.000 claims description 109
- 238000003860 storage Methods 0.000 claims description 73
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- 239000013078 crystal Substances 0.000 claims description 44
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 25
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- 239000010703 silicon Substances 0.000 description 24
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- 239000002184 metal Substances 0.000 description 23
- 238000006243 chemical reaction Methods 0.000 description 19
- -1 lithium Chemical class 0.000 description 18
- 239000011572 manganese Substances 0.000 description 18
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- 239000012535 impurity Substances 0.000 description 16
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- 238000001514 detection method Methods 0.000 description 8
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- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- FDLZQPXZHIFURF-UHFFFAOYSA-N [O-2].[Ti+4].[Li+] Chemical compound [O-2].[Ti+4].[Li+] FDLZQPXZHIFURF-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000006183 anode active material Substances 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- PWOSZCQLSAMRQW-UHFFFAOYSA-N beryllium(2+) Chemical compound [Be+2] PWOSZCQLSAMRQW-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 239000002608 ionic liquid Substances 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000010450 olivine Substances 0.000 description 1
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- 125000000962 organic group Chemical group 0.000 description 1
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- 125000001741 organic sulfur group Chemical group 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
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- 229920006122 polyamide resin Polymers 0.000 description 1
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- 239000004417 polycarbonate Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
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- 239000004926 polymethyl methacrylate Substances 0.000 description 1
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- 229920001296 polysiloxane Polymers 0.000 description 1
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- 239000011148 porous material Substances 0.000 description 1
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- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 150000004771 selenides Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
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- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
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- 229920003002 synthetic resin Polymers 0.000 description 1
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- 150000004772 tellurides Chemical class 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(II) oxide Inorganic materials [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/02—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from ac mains by converters
- H02J7/04—Regulation of charging current or voltage
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/007—Regulation of charging or discharging current or voltage
- H02J7/00712—Regulation of charging or discharging current or voltage the cycle being controlled or terminated in response to electric parameters
- H02J7/00714—Regulation of charging or discharging current or voltage the cycle being controlled or terminated in response to electric parameters in response to battery charging or discharging current
-
- H02J7/0078—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/007—Regulation of charging or discharging current or voltage
- H02J7/00712—Regulation of charging or discharging current or voltage the cycle being controlled or terminated in response to electric parameters
- H02J7/00714—Regulation of charging or discharging current or voltage the cycle being controlled or terminated in response to electric parameters in response to battery charging or discharging current
- H02J7/00718—Regulation of charging or discharging current or voltage the cycle being controlled or terminated in response to electric parameters in response to battery charging or discharging current in response to charge current gradient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
<充電回路の回路構成>
本実施の形態の充電回路の回路図を図1に示す。図1に示す充電回路100は、トランジスタ102、容量素子103、抵抗素子104、電圧電流変換回路105、ヒステリシスコンパレータ107(シュミットトリガともいう)を有している。充電回路100は、端子108、端子109、端子CON、及び、端子OUTによって外部回路と電気的に接続される。また図1に示す充電回路100には、当該充電回路100により充電される蓄電池101が電気的に接続される。
なお図1に示す充電回路100では、電流検出回路111は正電位側に設けられているが、電流検出回路は負電位側に設けてもよい。電流検出回路は負電位側に設けた例を図3に示す。なお図3において、図1と同じものは同じ符号で示している。図3に示す充電回路120において、電流検出回路113は、負電位側に設けられている。
以下に図1及び図2を用いて、充電回路100の動作の詳細について説明する。
次いで、上述した充電回路を用いた充電装置の構成について以下に説明する。
図5に、図4とは異なる構成を有する充電装置の例を示す。図5に示す充電装置では、制御回路180がカウンタ回路181及び発振回路182を内包している。制御回路180の端子CON_Oは、充電回路100の端子CONを介してトランジスタ102のゲートに電気的に接続されており、制御回路180の端子CON_Oからトランジスタ102のゲートに、パルス信号である電位CONが入力される。
図6に、図4及び図5とは異なる構成を有する充電装置の例を示す。図6に示す充電装置では、マイクロコンピュータ185がカウンタ回路181及び発振回路182を内包している。マイクロコンピュータ185の端子CON_Oは、充電回路100の端子CONを介してトランジスタ102のゲートに電気的に接続されており、マイクロコンピュータ185の端子CON_Oからトランジスタ102のゲートに、パルス信号である電位CONが入力される。
図7に、図4乃至図6とは異なる構成を有する充電装置の例を示す。図7に示す充電装置では、マイクロコンピュータ190が、制御回路170、カウンタ回路181、及び、発振回路182を内包している。制御回路170の端子GS、端子SENSE1、端子SENSE2、端子FB、及び、端子EN、並びに、カウンタ回路181の端子CON_Oは、マイクロコンピュータ190に設けられている。
本実施の形態では、実施の形態1で述べた蓄電池101の一例として、リチウム二次電池について説明する。
本実施の形態では、実施の形態1で述べた、チャネル形成領域に酸化物半導体を用いたトランジスタ(酸化物半導体トランジスタ)について説明する。
<<酸化物半導体材料について>>
酸化物半導体層231として、少なくともインジウムを含む膜を適用することができる。特に、インジウムと亜鉛を含む膜を適用することが好ましい。また、トランジスタの電気特性のばらつきを減らすためのスタビライザーとして、それらに加えてガリウムを有する膜を適用することが好ましい。なお以下では酸化物半導体層のことを酸化物半導体膜ということもある。
酸化物半導体層231として、単結晶、多結晶(ポリクリスタルともいう)又は非晶質などの結晶構造を有する膜を適用することができる。また、酸化物半導体層231として、CAAC−OS(C Axis Aligned Crystalline Oxide Semiconductor)膜を適用することができる。
酸化物半導体層231として、単一層からなる酸化物半導体膜のみならず複数種の酸化物半導体膜の積層を適用することができる。例えば、非晶質酸化物半導体膜、多結晶酸化物半導体膜、及びCAAC−OS膜の少なくとも2種を含む層を酸化物半導体層231として適用することができる。
導電層232及び導電層233のそれぞれとして、アルミニウム、銅、チタン、タンタル、タングステン、モリブデン、クロム、ネオジム、スカンジウムから選ばれた元素、これらの元素を成分とする合金、又はこれらの元素を含む窒化物からなる膜を適用することができる。また、これらの膜の積層を適用することもできる。
絶縁層234として、酸化シリコン膜、窒化シリコン膜、酸化窒化シリコン膜、窒化酸化シリコン膜、酸化アルミニウム膜、酸化窒化アルミニウム膜、又は酸化ガリウム膜などの無機絶縁材料膜を適用することができる。また、これらの材料の積層を適用することもできる。なお、絶縁層234として酸化アルミニウム膜を適用することが好ましい。酸化アルミニウム膜は、水素などの不純物、及び酸素の両方に対して膜を透過させない遮断(ブロッキング)効果が高い。よって、絶縁層234として酸化アルミニウム膜を含む層を適用することで、酸化物半導体層231からの酸素の脱離を防止するとともに、酸化物半導体層231への水素などの不純物の混入を防止することができる。
導電層235として、アルミニウム、銅、チタン、タンタル、タングステン、モリブデン、クロム、ネオジム、スカンジウムから選ばれた元素又はこれらの元素を成分とする合金からなる膜を適用することができる。また、導電層235として、窒素を含む金属酸化物、具体的には、窒素を含むIn−Ga−Zn系酸化物膜、窒素を含むIn−Sn系酸化物膜、窒素を含むIn−Ga系酸化物膜、窒素を含むIn−Zn系酸化物膜、窒素を含むSn系酸化物膜、窒素を含むIn系酸化物膜、又は金属窒化膜(InN、SnNなど)を適用することもできる。これらの窒化膜は5eV(電子ボルト)以上、好ましくは5.5eV(電子ボルト)以上の仕事関数を有し、ゲートとして用いた場合、トランジスタのしきい値電圧をプラスにすることができ、所謂ノーマリーオフのスイッチング素子を実現できる。また、これらの膜の積層を適用することもできる。
以下に、チャネル形成領域に酸化物半導体を用いたトランジスタ902と、チャネル形成領域に単結晶シリコンウェハを用いたトランジスタ901とを積層して構成される半導体装置の構造例について、図10を参照して説明する。なお、トランジスタ902は、実施の形態1に示すトランジスタ102等として適用することが可能であり、トランジスタ901は、実施の形態1に示す電圧電流変換回路105に含まれるトランジスタ、ヒステリシスコンパレータ107に含まれるトランジスタ、電源制御回路150のトランジスタ155、制御回路170に含まれるトランジスタ、制御回路180に含まれるトランジスタ、カウンタ回路181に含まれるトランジスタ、発振回路182に含まれるトランジスタ、マイクロコンピュータ185に含まれるトランジスタ、マイクロコンピュータ190に含まれるトランジスタ等として適用することが可能である。
ゲート絶縁膜929は、ソース電極層927及びドレイン電極層928と、酸化物半導体膜926とを覆うように形成されている。そして、ゲート絶縁膜929上において、酸化物半導体膜926と重なる位置にゲート電極層930が形成されている。
101 蓄電池
102 トランジスタ
103 容量素子
104 抵抗素子
105 電圧電流変換回路
107 ヒステリシスコンパレータ
108 端子
109 端子
111 電流検出回路
112 累積加算回路
113 電流検出回路
120 充電回路
150 電源制御回路
151 容量素子
152 抵抗素子
153 コイル
154 ダイオード
155 トランジスタ
161 直流電源
162 抵抗素子
163 抵抗素子
164 分圧回路
170 制御回路
180 制御回路
181 カウンタ回路
182 発振回路
185 マイクロコンピュータ
190 マイクロコンピュータ
220 トランジスタ
230 層
231 酸化物半導体層
232 導電層
233 導電層
234 絶縁層
235 導電層
300 蓄電池
301 正極集電体
302 正極活物質層
304 負極活物質層
305 負極集電体
307 セパレータ
308 電解液
309 外装体
310 蓄電池
311 正極
312 負極
900 基板
901 トランジスタ
902 トランジスタ
904 ウェル
906 不純物領域
907 ゲート絶縁膜
908 ゲート電極層
909 サイドウォール絶縁膜
910 絶縁膜
911 絶縁膜
912 絶縁膜
913 コンタクトプラグ
914 配線層
915 コンタクトプラグ
916 配線層
917 コンタクトプラグ
918 配線層
919 絶縁膜
920 絶縁膜
921 コンタクトプラグ
922 配線層
923 バックゲート電極層
924 絶縁膜
925 コンタクトプラグ
926 酸化物半導体膜
927 ソース電極層
928 ドレイン電極層
929 ゲート絶縁膜
930 ゲート電極層
932 絶縁膜
933 絶縁膜
Claims (3)
- 蓄電池を充電する充電装置であって、
電源制御回路から供給される充電電流に応じた電流を発生させる回路と、
ゲートに入力されるパルス信号に応じて、オン状態又はオフ状態となり、チャネル形成領域に非単結晶の結晶構造を有する酸化物半導体を用いたトランジスタと、
前記トランジスタに直接接続され、前記オン状態のトランジスタを介して前記充電電流に応じた電流が流れることにより、前記充電電流に応じた電荷が蓄積される容量素子と、
前記電荷が蓄積される容量素子の電位が、基準電位以上になったときに、前記蓄電池の充電終了を指示する信号を前記電源制御回路の制御回路に出力する回路と、を有し、
前記酸化物半導体は、透過型電子顕微鏡を用いた観察によって結晶粒界が確認されない領域を有し、
前記蓄電池の充電終了を指示する信号が、前記電源制御回路の制御回路に出力されることにより、前記充電電流の供給が終了されることを特徴とする充電装置。 - 蓄電池を充電する充電装置であって、
蓄電池の充電電流が流れる抵抗素子と、
前記抵抗素子に印加される電圧に基づいて、前記充電電流に応じた電流を発生させるオペアンプと、
ゲートに入力されるパルス信号に応じて、オン状態又はオフ状態となり、チャネル形成領域に非単結晶の結晶構造を有する酸化物半導体を用いたトランジスタと、
前記トランジスタに直接接続され、前記オン状態のトランジスタを介して前記充電電流の一部が流れることにより、電荷が蓄積される容量素子と、
前記電荷が蓄積される容量素子の電位が入力される第1の入力端子、及び基準電位が入力される第2の入力端子を有する比較器と、を有し、
前記酸化物半導体は、透過型電子顕微鏡を用いた観察によって結晶粒界が確認されない領域を有し、
前記容量素子の前記電位と、前記基準電位とを比較することにより前記比較器の出力電位が切り替えられ、
前記出力電位が切り替えられることにより、前記充電電流の供給が終了されることを特徴とする充電装置。 - 請求項2において、
前記比較器は、ヒステリシスコンパレータであることを特徴とする充電装置。
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US9316695B2 (en) * | 2012-12-28 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6218413B2 (ja) * | 2013-03-29 | 2017-10-25 | 株式会社Subaru | プレドープ剤、これを用いた蓄電デバイス及びその製造方法 |
KR20160132405A (ko) * | 2014-03-12 | 2016-11-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP6739150B2 (ja) | 2014-08-08 | 2020-08-12 | 株式会社半導体エネルギー研究所 | 半導体装置、発振回路、位相同期回路及び電子機器 |
US20170117730A1 (en) * | 2015-06-26 | 2017-04-27 | The Regents Of The University Of California | Efficient supercapacitor charging technique by a hysteretic charging scheme |
JP6608638B2 (ja) * | 2015-07-14 | 2019-11-20 | 株式会社半導体エネルギー研究所 | 蓄電装置及び電子機器 |
CN110352559B (zh) * | 2017-03-03 | 2023-11-14 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的驱动方法 |
WO2018215864A1 (ja) * | 2017-05-22 | 2018-11-29 | 株式会社半導体エネルギー研究所 | 充電制御システム、及び充電制御装置 |
JP7399857B2 (ja) | 2018-07-10 | 2023-12-18 | 株式会社半導体エネルギー研究所 | 二次電池の保護回路 |
JP7085428B2 (ja) * | 2018-07-10 | 2022-06-16 | 株式会社半導体エネルギー研究所 | 電池保護回路、蓄電装置、及び電気機器 |
US11714138B2 (en) | 2018-11-22 | 2023-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, power storage device, and electronic device |
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WO2020128702A1 (ja) | 2018-12-19 | 2020-06-25 | 株式会社半導体エネルギー研究所 | 二次電池の過放電防止回路及び二次電池モジュール |
WO2020128722A1 (ja) * | 2018-12-19 | 2020-06-25 | 株式会社半導体エネルギー研究所 | ヒステリシスコンパレータ、半導体装置、及び蓄電装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US6118523A (en) * | 1998-02-20 | 2000-09-12 | Lucent Technologies, Inc. | High-resolution zero-dispersion wavelength mapping in single mode fiber |
JP3305257B2 (ja) * | 1998-05-06 | 2002-07-22 | セイコーインスツルメンツ株式会社 | 充放電制御回路と充電式電源装置およびその制御方法 |
JP2004364419A (ja) | 2003-06-05 | 2004-12-24 | Hitachi Ulsi Systems Co Ltd | 充電装置 |
JP4066261B2 (ja) * | 2003-12-04 | 2008-03-26 | 財団法人北九州産業学術推進機構 | 並列モニタを有する電気二重層キャパシタ用充電回路 |
KR100684761B1 (ko) | 2005-03-21 | 2007-02-20 | 삼성에스디아이 주식회사 | 이차전지 모듈 |
US7592777B2 (en) * | 2005-04-15 | 2009-09-22 | O2Micro International Limited | Current mode battery charger controller |
EP3614442A3 (en) | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
KR20090002841A (ko) * | 2007-07-04 | 2009-01-09 | 삼성전자주식회사 | 산화물 반도체, 이를 포함하는 박막 트랜지스터 및 그 제조방법 |
JP5225186B2 (ja) * | 2009-04-17 | 2013-07-03 | フリースケール セミコンダクター インコーポレイテッド | 充電制御回路及びこの充電制御回路を備えたバッテリ充電器 |
US8704494B2 (en) * | 2010-03-30 | 2014-04-22 | Maxim Integrated Products, Inc. | Circuit topology for pulsed power energy harvesting |
JP2012039273A (ja) * | 2010-08-05 | 2012-02-23 | Yokogawa Electric Corp | 二重積分型ad変換器および積分型ad変換器 |
JP5886491B2 (ja) * | 2010-11-12 | 2016-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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