JP6209168B2 - モリブデンアリル錯体及び薄膜堆積におけるその使用 - Google Patents

モリブデンアリル錯体及び薄膜堆積におけるその使用 Download PDF

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Publication number
JP6209168B2
JP6209168B2 JP2014554752A JP2014554752A JP6209168B2 JP 6209168 B2 JP6209168 B2 JP 6209168B2 JP 2014554752 A JP2014554752 A JP 2014554752A JP 2014554752 A JP2014554752 A JP 2014554752A JP 6209168 B2 JP6209168 B2 JP 6209168B2
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alkyl
independently
vapor deposition
deposition
formula
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Japanese (ja)
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JP2015510502A (ja
JP2015510502A5 (enExample
Inventor
オデドラ，ラジェシュ
ガーラット，ショーン
サリー，マーク
カンジョリア，ラビ
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Sigma Aldrich Co LLC
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Sigma Aldrich Co LLC
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
JP2014554752A 2012-01-26 2013-01-18 モリブデンアリル錯体及び薄膜堆積におけるその使用 Active JP6209168B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261591002P 2012-01-26 2012-01-26
US61/591,002 2012-01-26
US201261711770P 2012-10-10 2012-10-10
US61/711,770 2012-10-10
PCT/US2013/022260 WO2013112383A1 (en) 2012-01-26 2013-01-18 Molybdenum allyl complexes and use thereof in thin film deposition

Publications (3)

Publication Number Publication Date
JP2015510502A JP2015510502A (ja) 2015-04-09
JP2015510502A5 JP2015510502A5 (enExample) 2016-03-03
JP6209168B2 true JP6209168B2 (ja) 2017-10-04

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JP2014554752A Active JP6209168B2 (ja) 2012-01-26 2013-01-18 モリブデンアリル錯体及び薄膜堆積におけるその使用

Country Status (9)

Country Link
US (1) US9175023B2 (enExample)
EP (1) EP2807174B1 (enExample)
JP (1) JP6209168B2 (enExample)
KR (1) KR101532995B1 (enExample)
CN (1) CN104136448B (enExample)
IL (1) IL233786A (enExample)
SG (1) SG11201404375PA (enExample)
TW (1) TWI563112B (enExample)
WO (1) WO2013112383A1 (enExample)

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US10573522B2 (en) * 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
KR102727616B1 (ko) 2016-10-07 2024-11-07 삼성전자주식회사 유기 금속 전구체, 이를 이용한 막 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
JP2022031988A (ja) * 2018-11-08 2022-02-24 株式会社Adeka 原子層堆積法による金属ルテニウム薄膜の製造方法
KR102355507B1 (ko) * 2018-11-14 2022-01-27 (주)디엔에프 몰리브덴 함유 박막의 제조방법 및 이로부터 제조된 몰리브덴함유 박막
US12148623B2 (en) 2018-11-19 2024-11-19 Lam Research Corporation Deposition of tungsten on molybdenum templates
SG11202108217UA (en) 2019-01-28 2021-08-30 Lam Res Corp Deposition of metal films
SG11202109796QA (en) 2019-03-11 2021-10-28 Lam Res Corp Precursors for deposition of molybdenum-containing films
WO2021046058A1 (en) 2019-09-03 2021-03-11 Lam Research Corporation Molybdenum deposition
JP2022551965A (ja) 2019-10-15 2022-12-14 ラム リサーチ コーポレーション モリブデン充填
JP7117336B2 (ja) 2020-01-30 2022-08-12 株式会社Kokusai Electric 半導体装置の製造方法、プログラム及び基板処理装置
KR102793252B1 (ko) 2020-03-25 2025-04-08 삼성전자주식회사 몰리브덴 화합물과 이를 이용한 집적회로 소자의 제조 방법
JP7433132B2 (ja) * 2020-05-19 2024-02-19 東京エレクトロン株式会社 成膜方法及び成膜装置
US11390638B1 (en) 2021-01-12 2022-07-19 Applied Materials, Inc. Molybdenum(VI) precursors for deposition of molybdenum films
US11459347B2 (en) 2021-01-12 2022-10-04 Applied Materials, Inc. Molybdenum(IV) and molybdenum(III) precursors for deposition of molybdenum films
US11434254B2 (en) 2021-01-12 2022-09-06 Applied Materials, Inc. Dinuclear molybdenum precursors for deposition of molybdenum-containing films
US11584768B2 (en) * 2021-01-12 2023-02-21 Applied Materials, Inc. Arene molybdenum (0) precursors for deposition of molybdenum films
US11760768B2 (en) 2021-04-21 2023-09-19 Applied Materials, Inc. Molybdenum(0) precursors for deposition of molybdenum films
KR20240096719A (ko) * 2021-11-10 2024-06-26 엔테그리스, 아이엔씨. 몰리브데넘 전구체 화합물
KR102731418B1 (ko) * 2021-12-13 2024-11-19 (주)디엔에프 몰리브데넘 화합물, 이의 제조방법 및 이를 포함하는 박막의 제조방법
JP2025031687A (ja) * 2023-08-24 2025-03-07 ダイキン工業株式会社 金属錯体

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Also Published As

Publication number Publication date
EP2807174B1 (en) 2016-03-30
KR20140116223A (ko) 2014-10-01
SG11201404375PA (en) 2014-10-30
TWI563112B (en) 2016-12-21
EP2807174A1 (en) 2014-12-03
IL233786A0 (en) 2014-09-30
KR101532995B1 (ko) 2015-07-01
CN104136448A (zh) 2014-11-05
JP2015510502A (ja) 2015-04-09
IL233786A (en) 2017-02-28
CN104136448B (zh) 2015-12-02
WO2013112383A1 (en) 2013-08-01
US9175023B2 (en) 2015-11-03
TW201335415A (zh) 2013-09-01
US20140370192A1 (en) 2014-12-18

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