KR101532995B1 - 몰리브덴 알릴 착체 및 박막 증착에서의 이의 용도 - Google Patents

몰리브덴 알릴 착체 및 박막 증착에서의 이의 용도 Download PDF

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KR101532995B1
KR101532995B1 KR1020147023665A KR20147023665A KR101532995B1 KR 101532995 B1 KR101532995 B1 KR 101532995B1 KR 1020147023665 A KR1020147023665 A KR 1020147023665A KR 20147023665 A KR20147023665 A KR 20147023665A KR 101532995 B1 KR101532995 B1 KR 101532995B1
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alkyl
independently
formula
ald
molybdenum
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KR20140116223A (ko
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라예쉬 오데드라
션 가랫
마크 샐리
라비 칸졸리아
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시그마-알드리치 컴퍼니., 엘엘씨
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020147023665A 2012-01-26 2013-01-18 몰리브덴 알릴 착체 및 박막 증착에서의 이의 용도 Active KR101532995B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261591002P 2012-01-26 2012-01-26
US61/591,002 2012-01-26
US201261711770P 2012-10-10 2012-10-10
US61/711,770 2012-10-10
PCT/US2013/022260 WO2013112383A1 (en) 2012-01-26 2013-01-18 Molybdenum allyl complexes and use thereof in thin film deposition

Publications (2)

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KR20140116223A KR20140116223A (ko) 2014-10-01
KR101532995B1 true KR101532995B1 (ko) 2015-07-01

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US (1) US9175023B2 (enExample)
EP (1) EP2807174B1 (enExample)
JP (1) JP6209168B2 (enExample)
KR (1) KR101532995B1 (enExample)
CN (1) CN104136448B (enExample)
IL (1) IL233786A (enExample)
SG (1) SG11201404375PA (enExample)
TW (1) TWI563112B (enExample)
WO (1) WO2013112383A1 (enExample)

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JP6346115B2 (ja) * 2015-03-24 2018-06-20 東芝メモリ株式会社 パターン形成方法
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JP2022031988A (ja) * 2018-11-08 2022-02-24 株式会社Adeka 原子層堆積法による金属ルテニウム薄膜の製造方法
KR102355507B1 (ko) * 2018-11-14 2022-01-27 (주)디엔에프 몰리브덴 함유 박막의 제조방법 및 이로부터 제조된 몰리브덴함유 박막
CN113169056A (zh) 2018-11-19 2021-07-23 朗姆研究公司 用于钨的钼模板
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US12334351B2 (en) 2019-09-03 2025-06-17 Lam Research Corporation Molybdenum deposition
US12327762B2 (en) 2019-10-15 2025-06-10 Lam Research Corporation Molybdenum fill
JP7117336B2 (ja) 2020-01-30 2022-08-12 株式会社Kokusai Electric 半導体装置の製造方法、プログラム及び基板処理装置
KR102793252B1 (ko) 2020-03-25 2025-04-08 삼성전자주식회사 몰리브덴 화합물과 이를 이용한 집적회로 소자의 제조 방법
JP7433132B2 (ja) * 2020-05-19 2024-02-19 東京エレクトロン株式会社 成膜方法及び成膜装置
US11434254B2 (en) 2021-01-12 2022-09-06 Applied Materials, Inc. Dinuclear molybdenum precursors for deposition of molybdenum-containing films
US11390638B1 (en) 2021-01-12 2022-07-19 Applied Materials, Inc. Molybdenum(VI) precursors for deposition of molybdenum films
US11584768B2 (en) * 2021-01-12 2023-02-21 Applied Materials, Inc. Arene molybdenum (0) precursors for deposition of molybdenum films
US11459347B2 (en) 2021-01-12 2022-10-04 Applied Materials, Inc. Molybdenum(IV) and molybdenum(III) precursors for deposition of molybdenum films
JP7686761B2 (ja) 2021-02-23 2025-06-02 ラム リサーチ コーポレーション ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積
JP2024514605A (ja) 2021-04-14 2024-04-02 ラム リサーチ コーポレーション モリブデンの堆積
US11760768B2 (en) 2021-04-21 2023-09-19 Applied Materials, Inc. Molybdenum(0) precursors for deposition of molybdenum films
KR20240008230A (ko) 2021-05-14 2024-01-18 램 리써치 코포레이션 고 선택도 도핑된 하드마스크 막들
JP7880961B2 (ja) * 2021-11-10 2026-06-26 インテグリス・インコーポレーテッド モリブデン前駆体化合物
KR102731418B1 (ko) * 2021-12-13 2024-11-19 (주)디엔에프 몰리브데넘 화합물, 이의 제조방법 및 이를 포함하는 박막의 제조방법
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10361118B2 (en) 2016-10-07 2019-07-23 Samsung Electronics Co., Ltd. Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same
US11062940B2 (en) 2016-10-07 2021-07-13 Samsung Electronics Co., Ltd. Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same

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JP2015510502A (ja) 2015-04-09
TW201335415A (zh) 2013-09-01
SG11201404375PA (en) 2014-10-30
CN104136448B (zh) 2015-12-02
CN104136448A (zh) 2014-11-05
JP6209168B2 (ja) 2017-10-04
WO2013112383A1 (en) 2013-08-01
KR20140116223A (ko) 2014-10-01
US20140370192A1 (en) 2014-12-18
EP2807174A1 (en) 2014-12-03
IL233786A0 (en) 2014-09-30
IL233786A (en) 2017-02-28
US9175023B2 (en) 2015-11-03
TWI563112B (en) 2016-12-21
EP2807174B1 (en) 2016-03-30

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