JP6200018B2 - 炭化珪素単結晶ウェハ - Google Patents

炭化珪素単結晶ウェハ Download PDF

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Publication number
JP6200018B2
JP6200018B2 JP2016050574A JP2016050574A JP6200018B2 JP 6200018 B2 JP6200018 B2 JP 6200018B2 JP 2016050574 A JP2016050574 A JP 2016050574A JP 2016050574 A JP2016050574 A JP 2016050574A JP 6200018 B2 JP6200018 B2 JP 6200018B2
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single crystal
wafer
growth
crystal
ingot
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Japanese (ja)
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JP2016164120A (ja
JP2016164120A5 (enExample
Inventor
正史 中林
正史 中林
光太 下村
光太 下村
幸雄 永畑
幸雄 永畑
小島　清
清 小島
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Nippon Steel Chemical and Materials Co Ltd
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Nippon Steel and Sumikin Materials Co Ltd
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Publication of JP2016164120A5 publication Critical patent/JP2016164120A5/ja
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  • Crystals, And After-Treatments Of Crystals (AREA)
JP2016050574A 2016-03-15 2016-03-15 炭化珪素単結晶ウェハ Active JP6200018B2 (ja)

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JP2016050574A JP6200018B2 (ja) 2016-03-15 2016-03-15 炭化珪素単結晶ウェハ

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JP2016050574A JP6200018B2 (ja) 2016-03-15 2016-03-15 炭化珪素単結晶ウェハ

Related Parent Applications (1)

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JP2013195010A Division JP5931825B2 (ja) 2013-09-20 2013-09-20 炭化珪素単結晶インゴットの製造方法

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JP2016164120A JP2016164120A (ja) 2016-09-08
JP2016164120A5 JP2016164120A5 (enExample) 2016-10-20
JP6200018B2 true JP6200018B2 (ja) 2017-09-20

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2019167337A1 (ja) 2018-03-01 2021-02-12 住友電気工業株式会社 炭化珪素基板
CN110747504B (zh) * 2019-11-26 2021-03-23 中国科学院物理研究所 一种碳化硅单晶的生长方法
CN113322520A (zh) * 2020-02-28 2021-08-31 Skc株式会社 晶片及其制造方法
KR102195325B1 (ko) * 2020-06-16 2020-12-24 에스케이씨 주식회사 탄화규소 잉곳, 웨이퍼 및 이의 제조방법
CN114540954B (zh) * 2020-11-25 2022-12-09 北京天科合达半导体股份有限公司 碳化硅单晶片、晶体及制备方法、半导体器件
EP4411030A4 (en) 2021-09-30 2025-10-08 Central Glass Co Ltd SILICON CARBIDE MONOCRYSTALLINE WAFER AND SILICON CARBIDE MONOCRYSTALLINE INGOT
US12325935B2 (en) 2021-09-30 2025-06-10 Central Glass Company, Limited Single-crystal silicon carbide wafer, single-crystal silicon carbide ingot, and method for producing single-crystal silicon carbide
WO2024080071A1 (ja) * 2022-10-11 2024-04-18 住友電気工業株式会社 炭化珪素結晶基板、エピタキシャル基板および半導体装置の製造方法
CN116334748B (zh) * 2023-03-21 2024-12-10 浙江材孜科技有限公司 一种降低碳化硅晶体应力的生长方法
WO2025121062A1 (ja) * 2023-12-08 2025-06-12 住友電気工業株式会社 炭化珪素基板、エピタキシャル基板および半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5304712B2 (ja) * 2010-04-07 2013-10-02 新日鐵住金株式会社 炭化珪素単結晶ウェハ
KR101530057B1 (ko) * 2011-08-29 2015-06-18 신닛테츠스미킨 카부시키카이샤 탄화규소 단결정 기판 및 그 제조 방법
JP5614387B2 (ja) * 2011-08-29 2014-10-29 新日鐵住金株式会社 炭化珪素単結晶の製造方法、及び炭化珪素単結晶インゴット

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